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199results about How to "Surface stabilization" patented technology

Optical semiconductor device and method for manufacturing the same

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
Owner:RIKEN

Optical semiconductor device and method for manufacturing the same

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
Owner:RIKEN

Isolated gate field effect transistor and manufacture method thereof

The invention discloses an isolated gate field effect transistor and the manufacture method thereof. Through the method of introducing metal when a dielectric layer is grown on a nitride transistor structure, the chemical properties of the dielectric layer are changed, and the effects of controlling etching speed and depth can be played. A groove structure is formed in a grid region in a partially thinned manner, and part of dielectric layer is reserved at the grid. A metal grid is arranged on the dielectric layer in the groove region of the grid, so as to form metal/ dielectric layer/ semi-conductor contact, and meanwhile, the groove is used for forming a field plate structure. Since the surface of a semi-conductor is protected by the dielectric layer during the entire technological process, damages to the surface of nitride, stress releasing and staining on the surface of the nitride can be greatly reduced, and the current collapsing effect of a device can be reduced greatly. Due to the MISFET (Metal Insulation Semiconductor Field Effect Transistor) or MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) structure is formed by the high-quality dielectric layer, current leakage of the grid can be reduced greatly.
Owner:昆山工研院第三代半导体研究院有限公司

Preparing method of human body epidermis physiology electrode sensor

The invention belongs to the field of flexible electronics, and discloses a preparing method of a human body epidermis physiology electrode sensor. The method comprises the following steps of 1, cleaning and blow-drying a hard substrate; 2, spin-coating the hard substrate with a polyvinyl alcohol solution, and heating and curing for film formation to form a sacrificial layer; 3, installing a screen printing plate and the hard substrate on a screen printing machine; 4, coating the screen printing plate with a conductive material, and utilizing a scraper for blade coating on the surface of the screen printing plate to form a function layer of the sensor; 5, spin-coating the sacrificial layer with a flexible high polymer, and heating to cure the flexible high polymer; 6, utilizing deionized water for heating to completely dissolve the sacrificial layer, so that the human body epidermis physiology electrode sensor is stripped from the hard substrate. The sensor prepared by means of the method has good wearability, and can move along with the human body without relative displacement; on one hand, the interference of movement with signals is reduced, and dynamic monitoring can be achieved; on the other hand, the sensor is comfortable, can be worn for a long term, and can collect richer physiology signals.
Owner:HUAZHONG UNIV OF SCI & TECH

Colored polyurethane surface coatings

InactiveUS6479561B1Surface stabilizationEfficiently and effectively make useSynthetic resin layered productsCoatingsPrepolymerPolyresin
Improvements for in-mold polyurethane foam and / or resin products and the ability to provide surface coatings of such products exhibiting bright coloration and reduced colorant migration through utilization of easy-to-use polymeric colorants in simplified and environmentally friendly processing methods are disclosed. The inventive surface coating formulations include polyurethane-reactive polymeric colorants admixed with prepolymer and excess amounts of certain isocyanate compounds. Such a composition is applied (by spraying, for example) to a polyurethane prepolymer (for the production of the internal polyurethane article) which is then introduced within a mold in order to form a particularly shaped or configured polyurethane article with a colored surface coating. Upon curing through exposure to heat, the coating composition reacts with the introduced polyurethane prepolymer to form a surface over the target internal polyurethane. The excess isocyanate present within the surface coating has been found to provide surprisingly good non-migration and non-bleed properties to the polymeric colorant thereby permitting the addition of such a highly desired, high color space, and effective polyurethane colorant within such surface coatings. The specific method as well as colored polyurethane articles are also contemplated within this invention.
Owner:MILLIKEN & CO

Soft-pellet creep feed and preparation method thereof

The invention discloses a soft-pellet creep feed and a preparation method thereof, and belongs to the field of feed formulation design and feed processing techniques. The preparation method comprises the following steps: mixing and bacillus subtilis and pickled vegetables fermentation liquor, performing fermentation in sequence to form fermented soybean meal and rice which are taken as main raw materials; adding steam fish meal, blood plasma powder, soybean meal and the like in a matched manner; utilizing a soft pelletizer to prepare pellet materials through ultramicro smashing; utilizing a syrup spray device to uniformly spray syrup on the surfaces of the pellet materials. The creep feed provided by the invention is full and balanced in nutrition, is easy to digest and intake, has stable quality, and is subjected to multiple fermentation. Moreover, feed inducing performance, soft protection performance and nutrition full value performance are improved, as a process of combining a soft manufacturing system and the syrup spray system is adopted; the incidence of hardening of medium-sized pellet feed during the preservation process is reduced; compared with a dry pellet feed, the loss of nutritional ingredient during the granulating heating and drying process is avoided, and the palatability of soft pellet feed is kept well.
Owner:LIAONING WELLHOPE AGRI TECH

Thermoplastically processable polyurethane molding material

A thermoplastically processable polyurethane molding material which is composed of a blend of at least two thermoplastic polyurethane, with at least 5 percent by weight, as a component A, being composed of a thermoplastic polyurethane which is obtained by reacting one or a plurality of aliphatic polyols which have a molecular weight of 800 to 4000 g/mol and a hydroxyl number of 20 to 235 and which are selected from the group of polyadipates, polycaprolactones, polycarbonates, polytetrahydrofurans and corresponding copolymers or mixtures thereof with 1,6-hexamethylene diisocyanate and the chain-extending agent 1,6-hexanediol in an equivalent ratio of the 1,6-hexamethylene diisocyanate to the polyol of 1.5:1 to 14.0:1, the NCO index formed from the quotient, which is multiplied by 100, of the equivalent ratios of isocyanate groups to the sum of the hydroxyl groups of polyol and chain-extending agent lying within a range of 96 to 105, and 100 percent by weight of the rest, as a component B, being composed of one or a plurality of further thermoplastic polyurethane which is obtained by reacting one or a plurality of aliphatic polyols which have a molecular weight of 800 to 4000 g/mol and a hydroxyl number of 20 to 235 and which are selected from the group of polyadipates, polycaprolactones, polycarbonates, polytetrahydrofurans and corresponding copolymers or mixtures thereof with the diisocyanates: 1,6-hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane diisocyanate, diphenylmethane diisocyanate and a chain-extending agent selected from the group of 1,4-butanediol, 1,5 pentanediol, 1,4-cyclohexanediol, bis(hydroxymethyl)cyclohexane, bis(hydroxyethyl)hydroquinone, polycaprolactone having a number average molecular weight of 350 to 600 g/mol and polytetrahydrofuran having a number average molecular weight of 200 to 600 g/mol in an equivalent ratio of the diisocyanate to the polyol of 1.5:1 to 14.0:1, the NCO index formed from the quotient, which is multiplied by 100, of the equivalent ratios of isocyanate groups to the sum of the hydroxyl groups of polyol and chain-extending agent lying within a range of 96 to 105.
Owner:INTIER AUTOMOTIVE EYBL INTERIORS +1

Method for remediating acid/heavy metal cadmium composite polluted soil by using Pennisetum hydridum

The invention discloses a method for remediating acid/heavy metal cadmium composite polluted soil by using Pennisetum hydridum. The method comprises the following steps: plowing polluted soil, and planting Pennisetum hydridum in low ridges from March, wherein irrigation and fertilizer application are performed or not performed in the complete growing season; and three months after planting, starting reaping the aerial part of Pennisetum hydridum once a month, incinerating the reaped substance by a conventional method, and extracting the heavy metal and fertilizer, thereby achieving the goal of remediating acid/heavy metal cadmium composite polluted soil. Pennisetum hydridum is a perennial herb; and by continuously planting the Pennisetum hydridum on the heavy metal cadmium polluted soil and continuously reaping the aerial part, the heavy metal cadmium in the soil is continuously extracted and transferred, and the pH value of the soil is changed until the soil achieves the environmental safety standard. The Pennisetum hydridum, which has the advantages of high biomass of the aerial part and developed root system, can absorb and fix abundant heavy metals, can retain water and protect soil, enhances the green level of the polluted area, and has favorable economic benefit, social benefit and ecological effect.
Owner:SCI RES ACADEMY OF GUANGXI ENVIRONMENTAL PROTECTION

Method for remediating acid/heavy metal lead composite polluted soil by using Pennisetum hydridum

The invention discloses a method for remediating acid/heavy metal lead composite polluted soil by using Pennisetum hydridum. The method comprises the following steps: plowing polluted soil, and planting Pennisetum hydridum in low ridges from March, wherein irrigation and fertilizer application are performed or not performed in the complete growing season; and three months after planting, starting reaping the aerial part of Pennisetum hydridum once a month, incinerating the reaped substance by a conventional method, and extracting the heavy metal and fertilizer, thereby achieving the goal of remediating acid/heavy metal lead composite polluted soil. Pennisetum hydridum is a perennial herb; and by continuously planting the Pennisetum hydridum on the heavy metal lead polluted soil and continuously reaping the aerial part, the heavy metal lead in the soil is continuously extracted and transferred, and the pH value of the soil is changed until the soil achieves the environmental safety standard. The Pennisetum hydridum, which has the advantages of high biomass of the aerial part and developed root system, can absorb and fix abundant heavy metals, can retain water and protect soil, enhances the green level of the polluted area, and has favorable economic benefit, social benefit and ecological effect.
Owner:SCI RES ACADEMY OF GUANGXI ENVIRONMENTAL PROTECTION
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