Dual gate fd-soi transistor

Abstract

Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present patent application is a continuation-in-part of U.S. patent application Ser. No. 14 / 078,236, filed on Nov. 12, 2013, which is hereby incorporated by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]The present disclosure relates to dual gate transistors built on substrates having a buried oxide layer and, in particular, to the use of such dual gate transistors in integrated circuits to improve circuit performance.[0004]2. Description of the Related Art[0005]Integrated circuits typically incorporate N-doped and P-doped metal oxide semiconductor field effect transistor (MOSFET) devices in which current flows through a semiconducting channel between a source and a drain, in response to a bias voltage applied to a gate. When the applied voltage exceeds a characteristic threshold voltage Vt, the device switches on. Ideally, such a switch: a) passes zero current when it is off; b) supplies large current flow when it ...

AI Technical Summary

Benefits of technology

The patent describes a way to make transistors using a special technology called FD-SOI. These transistors have two gates, one of which acts as a gate oxide for the other. By controlling the voltage on the secondary gate, the transistors can have their threshold voltage lowered, which improves their performance. This allows the transistors to switch quickly and at high speeds, even at low power levels. The use of FD-SOI technology also makes the transistors more efficient and can be used in a wider range of power supplies and frequencies. Overall, this technology allows for the creation of high-performing transistors that are more area efficient.

Problems solved by technology

Unfortunately, a transistor is not ideal as constructed in an integrated circuit and tends to leak current even when it is off.

Current that leaks through, or out of, the device tends to drain the battery that supplies power to the device.

However, as dimensions of silicon-based transistors continue to shrink, maintaining control of various electrical characteristics, including off-state leakage, becomes increasingly more challenging, while performance benefits derived from shrinking the device dimensions have become less significant.

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