37results about How to "Improve performance and reliability" patented technology

The embodiment of the invention discloses a multi-degree-of-freedom dynamic loading device for simulating wind power and ocean current load. One group of left axial loading pressurized cylinders is distributed on the left end of the loading bearing disk of a loading device along the axial direction; one group of right axial loading pressurized cylinders is distributed at the right end of the loading bearing disk along the axial direction; meanwhile, one group of radial loading pressurized cylinders is distributed on the main shaft at the left end of the loading bearing disk; the loading circuit of the hydraulic system is controlled by a computer control system to control the loading force of the left axial loading pressurized cylinders, the right axial loading pressurized cylinders and the radial loading pressurized cylinders; meanwhile, the loading force is transferred to a hydrostatic bearing by the loading pressurized cylinders and is transferred to a hydrostatic loading disk by the hydrostatic oil film of the hydrostatic bearing; and five-degree-of-freedom load (Fx, Fy, Fz, My and Mz) loading is finished by the combination of each loading force and loading bending moment. The multi-degree-of-freedom dynamic loading device is used for accurately simulating the wind power under the real working condition and various load situations borne the ocean current energy power generation device and each part in the transmission cabin of ocean current energy power generation device.

The invention discloses a device and a method for a CPU (central processing unit) to access a local bus on the basis of a PCIE (peripheral component interface express) protocol, which relate to the field of IPRAN (internet protocol radio access network). The device comprises a PCIE interface module, a data conversion module and a local bus interface module, wherein the PCIE interface module is used for realizing the PCIE underlying protocol, so that the device is used as one PCIE slave-end device to work under a PCIE system; the local bus interface module is used for simulating the time sequence of a traditional local bus and realizing the reading-writing access to an FPGA (field programmable gate array) local register or an external chip which is bridged through the FPGA. By Adopting the device and method, the highest possibility and performance can be obtained on the premise of consuming the least logic resource, the complexity in designing a PCIE interface transmission layer can be effectively simplified, the reading-writing efficiency of the system can be remarkably improved, and different local bus time sequences can be provided in real time.

System and method for characterizing vision systems. A multi-dimensional condition space is provided, each dimension representing a respective condition axis, where each point in the condition space specifies a set of conditions under which a vision system may operate. An image is provided. The condition space is sampled according to a pseudo-random sequence, e.g., a low-discrepancy sequence, to determine a plurality of test conditions usable to characterize the vision system, where each test condition corresponds to a respective set of conditions. A plurality of test images corresponding to the plurality of test conditions are generated based on the image, e.g., by applying image processing functions to the image that simulate the test conditions. A vision inspection is performed on each of the plurality of test images to generate respective test results, and the test results are analyzed to determine conditions under which the vision system operates correctly.

The invention discloses a dynamic data compression method for a solid-state disc storage system and relates to the field of computer storage. The redundancy characteristic of data in the storage system is fully utilized, and through a dynamic data compression technology, the redundant information is reduced and the written data quantity is reduced, so that a problem of asymmetry of read-write performance of a solid-state disc is relieved while the space utilization and reliability of the solid-state disc are improved. A compression bit chart and three function modules, namely a load monitoring module, a data compression module and a data decompression module, are arranged on the solid-state disc storage system; and the method comprises a request type judging step, a data compression and writing step and a data decompression reading step. According to the current load state of the system, the written data is dynamically compressed, so that the service ability of the system is unaffected, the written data is fully compressed, more written data is reduced, and the performance and the reliability of a solid-state disc storage device are improved.

The invention provides a restoring circuit for improving the negative bias temperature instability of a sensitive amplifier. The restoring circuit comprises an SRAM sensitive amplifier unit and an NBTI effect restoring unit, wherein the SRAM sensitive amplifier unit comprises a bit line BLB, a bit line BL, a precharging signal terminal Precharge, two PMOS transistors and three NMOS transistors; the NBTI effect restoring unit comprises an inverter INV, a third PMOS transistor M6, and a signal input terminal IN of a restoring unit. Through the adoption of the restoring circuit provided by the invention, the influence of an NBTI effect on the sensitive amplifier circuit is reduced, the performance and the reliability of the sensitive amplifier are improved, the power consumption of the circuit is lowered, the integral stability of a memory is improved, and the access performance of the memory is improved.

The invention provides a communication device and system as well as method of a wireless cloud sensor network. The system comprises a plurality of wireless devices, and further comprises a cloud server which is connected with the wireless devices of the wireless sensor network through the Ethernet. The cloud server is used to search for transmission paths for the wireless devices through a communication path storage list and strength list of received signals according to requests of the wireless devices of the wireless sensor network, and generate communication path commands of the wireless devices according to the searching result and feed back the communication path commands to the wireless devices. The wireless devices are used to send transmission path requests of the wireless devices to the cloud server through the Ethernet according to information transmission requests of the wireless sensor network, and transmit information according to the received communication path commands of the wireless devices. The invention improves the performance of the wireless sensor network greatly, is low in cost and high in efficiency, and has high transmitting capacity and reliability.

A memory system and an operating method thereof include: at least a host; and at least PCIe coupled with the host, wherein the at least PCIe link includes at least a PCIe switch and a plurality of PCIe endpoints, wherein the plurality of PCIe endpoints includes used PCIe endpoints and unused PCIe endpoints, the used PCIe endpoints are mapped into a PCIe enumeration tree, and the unused PCIe endpoints are removed from the PCIe enumeration tree, at virtual switch mode.

The invention discloses a single-tube resonance soft switch circuit of an induction cooker and a control method thereof. The single-tube resonance soft switch circuit of the induction cooker comprises a rectifier and filter circuit, a main resonance circuit and an auxiliary resonance circuit, wherein the main resonance circuit comprises a heating winding disc, a resonance capacitor and a main switching tube, the auxiliary resonance circuit comprises an auxiliary resonance inductor and an auxiliary switch, and a main circuit of the auxiliary resonance circuit is connected with the main switching tube in parallel. When the single-tube resonance soft switch circuit of the induction cooker is in a low-power output sate and the voltage of a collector of the main switching tube cannot be subjected to normal resonance to reach zero, the auxiliary resonance circuit begins working to release residual electric energy of the resonance capacitor before the main switching tube is switched on. According to the invention, the zero-voltage-switching of the main switching tube can be realized in a low-power output state and real low-power continuous output can be reached, so that the performance and reliability of the induction cooker are improved.

The embodiment of the invention discloses a method and system for processing a Java application and an SAF (service availability forum) platform. The method comprises: an SAF agent interacts with the Java application via an application programming interface (API), converts the request of the Java application to a request message and sends the request message to an SAF server so that the SAF server carries out control processing on the Java application via the SAF agent according to the request message, wherein the SAF agent is in communication linkage with the SAF server; and the API is based on Java language. In the embodiment of the invention, the SAF platform interacts with the Java application via the API based on the Java language so as to process the Java application; and API calling adopting the Java language is taken as a basis, and a pointer operation is not involved, thus improving the performance and reliability of the Java application.

The demodulation method of unipolar modulated signal includes first obtaining the unipolar demodulation signal of paging indication channel (PICH) by utilizing the information of common pilot channel (CPICH); estimating the fading period of the propagation channel with Doppler frequency in the same time; obtaining CPICH reference level based on the fading period; determining the PICH hard judgment threshold with the power bias of CPICH and PICH and the reference level; and finally judging the unipolar demodulation signal with the threshold to obtain demodulated unipolar signal. The said method can overcome the effect of fading on the statistical threshold precision of unipolar modulation signal to raise the demodulation performance and reliability of unipolar modulation signal. The present invention also provides one kind of unipolar modulation signal demodulating device.

An embodiment of the invention discloses a solar cell photovoltaic module which comprises multiple cell strings in mutually parallel connection. Two ends of each cell string are connected with an anode and a cathode of the solar cell photovoltaic module respectively, and each cell string comprises multiple cell pieces in mutually parallel connection, so that when the solar cell photovoltaic module works, part of the cell pieces are shielded, normal working of other cell pieces cannot be influenced, hot spot effect is solved fundamentally, performance and reliability of the solar cell photovoltaic module are improved, and unnecessary loss is lowered.

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

The invention provides an IGBT chip and a preparation method thereof. The IGBT chip comprises a terminal protection area and a cellular area, wherein the cellular area comprises an IGBT cell and a temperature sensing area, the temperature sensing area comprises a first conductive type substrate, a field oxide layer located above the substrate, a first polycrystalline silicon layer and a second polycrystalline silicon layer which are arranged side by side above the field oxide layer, and a first electrode, a second electrode and a third electrode which are located above the first polycrystalline silicon layer and the second polycrystalline silicon layer and are isolated from each other, wherein the first polycrystalline silicon layer is used for forming a positive temperature coefficient thermistor, and the second polycrystalline silicon layer is used for forming a negative temperature coefficient thermistor. According to the IGBT chip, a positive temperature coefficient thermistor (PTC) and a negative temperature coefficient thermistor (NTC) are integrated in an IGBT cellular area, and the NTC and the PTC resistor are connected in series to amplify an electrical signal generated by temperature change, so that the temperature detection sensitivity is improved so as to further improve the performance and the reliability of the IGBT chip.

The invention relates to a cascade speed regulation device under the fast overcurrent protection of a composite chopped wave band. According to the invention, a digital signal processor is adopted for carrying out digital double closed loop control on a chopper subjected to internal feedback chopped wave cascade speed regulation. The chopper is controlled by misphase to reduce direct-current current pulse, and the performance and the reliability of the chopper are improved. Meanwhile, the traditional active inverter is modified, the upper bridge arm of the active inverter is composed of a full-control device IGBT(Insulated Gate Bipolar Transistor); the lower bridge arm of the active invertr is also composed of a half-control device thyristor SCR (Silicon Controlled Rectifier); therefore, overcurrent protection can be quickly carried out; and the problem that the thyristor is inverted and subverted when the system power grid is powered down can be effectively prevented. Therefore, the chopper subjected to the internal feedback chopped wave cascade speed regulation is subjected to digital double closed loop control by a new power electronic technology and a new topological structure and control method to jointly act on the cascade speed regulation, and a cascade speed regulation system is lifted to a new step on the technology.

The invention discloses an on-orbit reconstruction method and system for an aerospace electronic system based on FPGA. The method is based on an FPGA technology and can realize software and FPGA on-orbit reconstruction functions of the aerospace electronic system. The method plays a key role in astronavigation electronic system on-orbit fault restoration, and relieving of the influence of the universe space single event effect (SEE) on astronavigation electronic equipment such as satellites. The autonomous health management and on-orbit maintenance capabilities of the aerospace electronic system are fundamentally improved. And on-orbit autonomous configuration, self-test, autonomous repair and maintenance can be realized. Therefore, the system performance and reliability are greatly improved.

There is provided mechanisms for adapting which beam to use for communicating signals. A method is performed by a radio transceiver device. The radio transceiver device is capable of communicating thesignals using beams selected from a set of beams. The method comprises communicating signals with another radio transceiver device while using a first beam selected from the set of beams. The methodcomprises detecting that the signals are communicated at decreasing quality level while using the first beam. The decreasing quality level is caused by radio propagation channel deterioration. The method comprises, in response thereto, initiating a switch to a backup beam of the first beam, without performing any beam training, to continue communicating the signals with said another radio transceiver device, thereby adapting which beam to use for communicating the signals.

The invention provides an air conditioning system. The system comprises a condenser, a flash-tank and at least one cooling channel, wherein the condenser communicates with the flash-tank through the cooling channel; the cooling channel comprises a cooling section, and the cooling section can cool a to-be-cooled component; and when the air conditioning system is in the first working condition, a cooling medium flows through the cooling section and flows into the flash-tank. According to the air conditioning system, the to-be-cooled component in the air conditioning system can be in a proper cooling effect, and the reliability and performance of the air conditioning system are improved.

The present invention relates to a fuel-feeding pump of common rail injection system applicable to vehicle low-discharge compression ignition engine. It is mainly characterized by that external peripheral surface of valve seat in its fuel-pumping component has screw threads, the valve seat is fixed in the screw hole of plunger bushing and can be used for making orifice plate be lightly pressed on the sealed end face of plunger bushing. Besides, on the valve seat several circular holes for mounting and removal are set, and the sealing ring is mounted in the circular groove positioned in the middle of clamping nut.

A semiconductor memory device comprises a memory array including a plurality of bit lines and a plurality of dummy bit lines, a bias application unit configured to supply bias voltages having a plurality of voltage levels to the plurality of dummy bit lines, a standby current measuring unit configured to measure a value of at least one of standby currents between at least one of the plurality of bit lines and at least one of the plurality of dummy bit lines. Each of the standby currents is generated by each of the bias voltages applied by the bias application unit.

A storage device which limits the partition of the logical memory devices for computers in accordance with the condition of partition which was defined to the properties such as reliability and the storage device so that the logical memory devices are unable to be utilized for uses other than objectives, a control method for partitioning the logical memory devices of the storage device and a control program product for partitioning the logical memory devices of the storage device. An access control means approves an access only to the logical memory device which was partitioned referring to an access control table. An access control setting means renews the access control table so as to partition the assigned logical memory devices to the assigned computer when the assigned logical memory devices can be partitioned. A utilization condition setting means determines the partition propriety of the logical memory device based the content of the partition condition defining table including a pair of the property condition which is the origin of judging whether the logical memory device can be partitioned or not and the partition propriety information of showing the propriety of partition to the computer and the content of the property table including a pair of the logical memory device ID and the property information of the corresponding logical memory device, and renews the partition management table.

The invention discloses a semiconductor device manufacturing method. The method comprises the steps that a dummy gate insulating layer and a dummy gate layer are formed on a substrate; lining layers are formed on both sides of the dummy gate layer; gate side walls are formed on the substrate on both sides of the lining layers; the dummy gate layer is removed until the dummy gate insulating layer is exposed; the dummy gate insulating layer is removed until the substrate is exposed; and a gate trench is formed. According to the semiconductor device manufacturing method provided by the invention, silicon nitride made of CVD is used as the dummy gate insulating layer and the side of the dummy gate layer to form the oxide lining layers; unnecessary erosion of the substrate and especially the channel region can be avoided; and the performance and the reliability of a device are improved.

The invention provides an electric compressor. Since possibility of insufficient oil caused by a possible increase of an oil jet amount toward the external of an electric compressor and lowering of an oil face of an oil accumulating part exists, a rotating compressor (electric compressor) (10) receives an electric essential element (14) and a rotating compression element (compression element) (32) driven by the electric essential element (14) in a closed container (12), the electric essential element (14) is formed by a stator (22) provided with a stator winding (28) and a rotor (24) rotating in the stator (22), wherein, the rotating compressor (10) is provided with a cut (22) formed at the outer edge part of the stator (22), an oil drainback passage (80) is formed between the cut (22A) and the closed container (12), joints (29A, 29B)of coil terminals of the stator winding (28) are configured at positions deviate from the range of the cut (22A).

The invention discloses a semiconductor structure and a forming method of the semiconductor structure. The method comprises the steps: providing a substrate, wherein the substrate comprises an isolation region and is provided with a plurality of fin parts which are separated from one another; forming a first dielectric structure on the substrate and the surfaces of the fin parts, wherein a plurality of gate openings crossing the fins parts are formed in the first dielectric structure, and cross the isolation region; forming a gate structure in each gate opening; removing the gate structure on the isolation region, and forming first openings penetrating through the gate structure in the first dielectric structure on the isolation region; removing at least part of the first dielectric structure between the adjacent first openings, and forming second openings communicated with the first openings between the adjacent first openings, wherein the first openings and the second openings form partition openings; and forming a strained layer at least within the partition opening. According to the invention, the performance and the reliability of the semiconductor structure are improved.

The invention relates to the technical field of preparation of third-generation semiconductor materials, in particular to an epitaxial substrate embedded with a metal-based nitride material and a preparation method thereof, a pit array is manufactured on one surface of the substrate, a composite metal layer grows in the pit array, and the composite metal layer grows to cover the substrate; the specific preparation method comprises the following steps: carrying out graphical processing on one surface of a substrate to form a pit array extending into the substrate; growing a composite metal layer on one surface of the pit array of the substrate, wherein the composite metal layer grows to cover the substrate; and thinning the surface, back to the pit array, of the substrate. According to theinvention, the problem of poor heat dissipation of the third-generation nitride material and device is solved, so that the nitride material and device are always in a lower junction temperature statein the working process, and the reliability and performance of the nitride material and device are improved.

A method for forming a semiconductor structure comprises the steps that a substrate is provided, and the substrate is provided with a plurality of fin structures which are separated from one another; forming a plurality of first dummy gates crossing the fin structures on the substrate; a dielectric layer is formed on the substrate, the dielectric layer is further located on the side walls of the first dummy gates, and the top faces of the first dummy gates are exposed out of the surface of the dielectric layer; after the dielectric layer is formed, removing the plurality of first dummy gates, and forming a plurality of gate openings in the dielectric layer; forming a second dummy gate in the gate opening; a gate isolation structure is formed, the gate isolation structure penetrates through at least one second dummy gate in the first direction, and the first direction is perpendicular to the extending direction of the second dummy gate. Therefore, the performance and the reliability of the semiconductor structure are improved.

The invention discloses a power supply system for graded power-up. The power supply system mainly comprises a normally-closed alternating current contactor, a normally-open alternating current contactor, an AC / DC auxiliary circuit, an AC / DC main circuit and an isolation diode. After normal power supply, the normally-closed alternating current contactor controls the AC / DC auxiliary circuit to be started preferentially, and environment control equipment and the like are powered up in advance. After reasonable time delay, the normally-open alternating current contactor controls the AC / DC main circuit to be started to supply power to main electric equipment. After the output of the AC / DC main circuit is stable, the AC / DC auxiliary circuit is controlled to be closed, and only the main circuit works. The AC / DC auxiliary circuit only works in the power-on initial stage, so that the problem of extra power consumption caused by continuous work of the auxiliary circuit is completely solved, andmeanwhile, the reliability of the power supply is also greatly improved. Besides, only the AC / DC main circuit is left to work after the power supply is started, so that current harmonics can be effectively reduced only by adding the PFC circuit into the main circuit, the power factor of the whole power supply is improved, and the cost is saved while the power supply performance is improved.

The invention discloses a laser chip. The laser chip comprises an optical module; the optical module is integrated on the laser chip; the optical module comprises a first laser, a modulation unit, a second laser, a first coupling unit and a second coupling unit. The first laser is used for outputting laser beams; the first coupling unit is arranged between the first laser and the modulation unit and is used for coupling the laser beam to the modulation unit; the modulation unit is used for generating a single-stage or multi-stage modulation sideband according to the linear frequency modulation microwave signal and the laser beam; the second coupling unit is arranged between the modulator and the second laser and is used for coupling the modulation sideband to the second laser; the second laser is used for outputting linear frequency modulation laser according to the modulation sideband; the frequency of the linear frequency modulation laser is related to the frequency of a certain sideband of the modulation sideband. The single-frequency narrow-linewidth linear frequency modulation light source with high side-mode rejection ratio, high repetition frequency, large broadband and high linear frequency modulation is generated, and due to the fact that all optical devices are integrated in a chip, the size is small, and the cost is low.

The invention discloses a fixed scroll disk fixing structure of scroll compressor. Said scroll compressor includes upper support frame mounted in the interior of external shell, fixing scroll disk fixed on the upper support frame and movable scroll disk which can be meshed with fixed scroll disk and can be used for forming several comperssion chambers. In the scroll disk mounting structure of scroll compressor at least one fixed scroll disk whose screw holt is inclined to oxial direction. Said scroll disk mounting structure can prevent leakage of compressed air and vibration due to noise so as to raise the performance and reliability of compressor.

The present invention provides a semiconductor device and a manufacturing method thereof. The method comprises: providing a semiconductor substrate; forming a high-k dielectric layer on the semiconductor substrate; forming a cap layer or a work function metal layer on the high-k dielectric layer; performing ion implantation on the cap layer or the work function metal layer; and forming a metal gate on the cap layer or the work function metal layer. According to the semiconductor device manufacturing method provided by the present invention, ion implantation is performed after forming a cap layer or a work function metal layer, and diffusion of metal atoms in a subsequently formed metal gate is avoided, so that an effective work function of the semiconductor device is improved, and the performance and reliability of the semiconductor device are improved.

The invention proposes a preparation method of a wedge-shaped thin film for the defects in the prior art. The thin film with wedge-shaped edges can be prepared through correcting a commonly used graphical method, and angles of the wedge shape can be flexibly adjusted in a range from 0 to 90 degrees. The wedge-shaped thin film is formed by depositing a new thin film material on a thin film having small wedge angles, the new thin film material cannot crack and the like, thus the performance and reliability of a device are greatly improved.