Semiconductor structure and forming method of semiconductor structure

A technology of semiconductor and gate structure, which is applied in the field of semiconductor structure and the formation of semiconductor structure, which can solve the problems that the performance and reliability of semiconductor devices need to be improved, and achieve the effect of improving performance and reliability

Pending Publication Date: 2022-01-21
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance and reliability o

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  • Semiconductor structure and forming method of semiconductor structure
  • Semiconductor structure and forming method of semiconductor structure
  • Semiconductor structure and forming method of semiconductor structure

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[0033] As described in the background, the performance and reliability of the semiconductor structure remain to be improved. The analytical description is made in conjunction with specific embodiments.

[0034] It should be noted that "surface" in this specification is used to describe the relative positional relationship of the space, and is not limited to whether or not it is in direct contact.

[0035] Figure 1 to 3 It is a schematic structural diagram of a process of forming a semiconductor structure.

[0036] Please refer to Figure 1 to 2 , figure 1 It is a schematic view of a semiconductor structure. figure 2 Yes figure 1A cross-sectional structure in the direction in the A-A1 direction, provides a substrate 100 including an isolation region B, which has several mutually discrete fin structures 101; forming a first dielectric structure 120 and a plurality of The gate structure 110 across fin structure 101, the first medium structure 120 is located on the surface of the fin ...

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Abstract

The invention discloses a semiconductor structure and a forming method of the semiconductor structure. The method comprises the steps: providing a substrate, wherein the substrate comprises an isolation region and is provided with a plurality of fin parts which are separated from one another; forming a first dielectric structure on the substrate and the surfaces of the fin parts, wherein a plurality of gate openings crossing the fins parts are formed in the first dielectric structure, and cross the isolation region; forming a gate structure in each gate opening; removing the gate structure on the isolation region, and forming first openings penetrating through the gate structure in the first dielectric structure on the isolation region; removing at least part of the first dielectric structure between the adjacent first openings, and forming second openings communicated with the first openings between the adjacent first openings, wherein the first openings and the second openings form partition openings; and forming a strained layer at least within the partition opening. According to the invention, the performance and the reliability of the semiconductor structure are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the semiconductor structure. Background technique [0002] In the field of semiconductor technology, with the continuous reduction of the feature size of integrated circuits and the requirement for higher signal transmission speed of integrated circuits, transistors need to have higher driving current while gradually reducing their size. [0003] In order to make the semiconductor device have a higher driving current while the size is gradually reduced, generally, the structure of the fin field effect transistor is adopted. Since the fin field effect transistor is a similar three-dimensional structure located on the substrate, its feature size is smaller, which can better meet the requirements of high integration. Moreover, the gate of the fin field effect transistor is opposite to the upper surface of the fin, and the...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336H01L29/10H01L29/06H01L21/3065
CPCH01L29/785H01L29/66795H01L29/1054H01L21/30655H01L29/0642
Inventor 张海洋王艳良王静
Owner SEMICON MFG INT (SHANGHAI) CORP
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