Preparation method of wedge-shaped thin film

A wedge-shaped and thin-film technology is applied in the field of preparation of wedge-shaped thin films, which can solve the problems of forming cracks, affecting resonator performance and ESD reliability, and poor piezoelectric film performance, and achieving the effect of improving performance and reliability.

Pending Publication Date: 2017-09-22
HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the edge of the lower electrode patterned by the commonly used method is generally at a right angle, the piezoelectric film cannot grow along the required direction perpendicular to the substr

Method used

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  • Preparation method of wedge-shaped thin film
  • Preparation method of wedge-shaped thin film
  • Preparation method of wedge-shaped thin film

Examples

Experimental program
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Example Embodiment

[0025] Example 1

[0026] Fig. 1 is a flow chart of the preparation process of a wedge-shaped film according to an embodiment of the present invention. The preparation process includes:

[0027] (a) Prepare a single-sided or double-sided polished silicon wafer 100, where the polished surface is facing upward, and standard cleaning is performed. As shown in Figure 1(a).

[0028] (b) Depositing a thin film 200 on the silicon wafer 100, for example, the thin film 200 is Mo; its thickness is h 0 , For example, 470nm. As shown in Figure 1(b).

[0029] (c) Depositing a thin film 300 on the thin film 200, for example, the thin film 300 is Al; its thickness is h 1 , For example, 160nm. As shown in Figure 1(c).

[0030] (d) Spun the photoresist 400 uniformly on the film 300, the thickness of which is h 2. For example, 1um. As shown in Figure 1(d).

[0031] (e) Performing photolithographic development on the photoresist to form the required pattern topography. As shown in Figure 1(e).

[0032]...

Example Embodiment

[0040] Example 2

[0041] The present invention also provides a thin film bulk acoustic wave resonator, including the wedge-shaped structure formed in embodiment 1, for example, a cavity is formed on the substrate, and a bottom electrode of the wedge-shaped structure is formed on the cavity, and a pressure is further deposited on the bottom electrode. Electrical material layer, top electrode. Since the piezoelectric material layer and the top electrode layer are prepared on the wedge-shaped structure, defects such as cracks in the subsequently grown thin film layer are effectively avoided, and the performance and reliability of the device are greatly improved.

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Abstract

Aiming at the defects of the prior art, the invention proposes a preparation method of a wedge-shaped thin film. By modifying the commonly used patterning method, a film with a wedge-shaped edge can be prepared, and the wedge-shaped angle can be flexibly adjusted within the range of 0-90 degrees. Depositing a new thin film material on the thin film with a small wedge angle, the new thin film material will not have cracks and the like, which greatly improves the performance and reliability of the device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a wedge-shaped thin film. Background technique [0002] During the production and processing of semiconductor devices such as IC and MEMS, it is often necessary to deposit other thin film materials on a certain patterned thin film material. The film material is prepared by the commonly used patterning method, and its edge often presents a right angle of 90 degrees. When other film materials are deposited on the edge position, it is easy to cause cracks in the newly deposited film material, and the film defect is extremely large. Affect the performance and reliability of the device. The most typical example is that in the process of preparing a thin film bulk acoustic resonator, after depositing the lower electrode film of the thin film bulk acoustic resonator, it will be patterned to form the lower electrode, and then on the patterned lower elect...

Claims

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Application Information

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IPC IPC(8): H03H3/02H01L21/28
CPCH03H3/02H01L21/28H03H2003/023Y02D30/70
Inventor 王国浩张树民陈海龙汪泉
Owner HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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