Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the effective work function of the device, diffusion of aluminum atoms, affecting the performance and reliability of the device, etc., so as to improve the performance and reliability. The effect of the effective work function

Inactive Publication Date: 2019-03-05
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0004] However, in the existing high-k dielectric layer/metal gate last process, the material of the metal gate is usually aluminum, so aluminum atoms are prone to diffuse, and aluminum atoms diffuse to the work function metal layer or even the high-k dielectric

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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[0030] In the following description, a lot of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

[0031] It should be understood that the present invention can be implemented in different forms and should not be interpreted as being limited to the embodiments presented here. On the contrary, the provision of these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals denote the same elements throughout.

[0032] It should be understood that when ...

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Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. The method comprises: providing a semiconductor substrate; forming a high-k dielectric layer on the semiconductor substrate; forming a cap layer or a work function metal layer on the high-k dielectric layer; performing ion implantation on the cap layer or the work function metal layer; and forming a metal gate on the cap layer or the work function metal layer. According to the semiconductor device manufacturing method provided by the present invention, ion implantation is performed after forming a cap layer or a work function metal layer, and diffusion of metal atoms in a subsequently formed metal gate is avoided, so that an effective work function of the semiconductor device is improved, and the performance and reliability of the semiconductor device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] The main device in integrated circuits (ICs), especially VLSIs, is metal-oxide-semiconductor field-effect transistors (MOSs). High performance and more functional integrated circuits require greater component density, and the size, size, and space of individual components, between components, or by themselves need to be further reduced. [0003] For CMOS with more advanced technology nodes, high-k last / metal gate last (high-k and metal gate last) technology has been widely used in CMOS devices to avoid damage to devices by high-temperature processing processes. In current high-k / metal gate-last technology, the formation of interfacial layer (IL) and high-k (HK) dielectric layer is followed by deposition of work function metal layer (WF) and metal Grid (MG). [0004] However, in the ...

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Application Information

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IPC IPC(8): H01L21/28H01L29/423
CPCH01L29/401H01L29/42356
Inventor 涂火金
Owner SEMICON MFG INT (SHANGHAI) CORP
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