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Epitaxial substrate embedded with metal-based nitride material and preparation method thereof

An epitaxial substrate and nitrogen-based technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of poor heat dissipation of third-generation nitride materials and devices, and achieve the goal of improving reliability and performance Effect

Pending Publication Date: 2021-01-29
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the above problems, the present invention provides an epitaxial substrate with an embedded metal-based nitride material and a preparation method to solve the problem of poor heat dissipation of the third-generation nitride materials and devices, so that the nitride materials and devices are always in a constant state during the working process. Lower junction temperature state, improve its reliability and performance

Method used

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  • Epitaxial substrate embedded with metal-based nitride material and preparation method thereof
  • Epitaxial substrate embedded with metal-based nitride material and preparation method thereof
  • Epitaxial substrate embedded with metal-based nitride material and preparation method thereof

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preparation example Construction

[0033] see figure 2 As shown, the present invention relates to a method for preparing an epitaxial substrate with an embedded metal-based nitride material, comprising the following steps:

[0034] S10. Perform patterning on a surface of the substrate to form an array of pits extending into the interior of the substrate;

[0035] S20, growing a layer of composite metal layer on the pit array side of the substrate, and the composite metal layer is grown to cover the substrate;

[0036] S30. Thinning the side of the substrate facing away from the pit array.

[0037] Firstly, the present invention performs patterning on the substrate, increases the contact area between the subsequent composite metal layer and the substrate, and is closer to the functional layer of the epitaxial material device, so as to maximize the heat conduction path, and secondly, it can well release the metal medium and the traditional material The thermal mismatch and lattice mismatch stress, the size of ...

no. 1 example

[0052] The substrate selected in this embodiment is a 2-inch aluminum nitride substrate with a thickness of 430 μm, a crystal orientation of 001, and a resistivity greater than 107 Ω.cm. The aluminum nitride substrate is uniformly glued and developed through a semiconductor process. and etching to form a pit array with a depth of 5 μm on the surface; then use PVD to deposit a layer of 0.1 μm first copper layer on the pit array; Copper layer, the second copper layer fills the pit array; finally, the third copper layer is electroplated by electroplating, and the thickness of the third copper layer is thickened to 150 μm; finally, the aluminum nitride substrate faces the pit One side of the pit array was first thinned to 300 μm, and then annealed in a medium-temperature bottom annealing furnace for 5 hours under 600-degree nitrogen gas; then the second thinning was performed to 150 μm, and then The annealing time is 3 hours under the condition of 600 degrees nitrogen in the high ...

no. 2 example

[0055] The substrate selected in this embodiment is a 2-inch aluminum nitride substrate with a thickness of 430 μm, a crystal orientation of 001, and a resistivity greater than 107 Ω.cm. The aluminum nitride substrate is uniformly glued and developed through a semiconductor process. and etching to form a pit array with a depth of 5 μm on the surface; then use PVD to deposit a layer of 0.1 μm first copper layer on the pit array; Copper layer, the second copper layer fills the pit array; finally, the third copper layer is electroplated by electroplating, and the thickness of the third copper layer is thickened to 150 μm; finally, the aluminum nitride substrate faces the pit One side of the pit array was first thinned to 300 μm, and then annealed in a medium-temperature bottom annealing furnace for 5 hours under 600-degree nitrogen gas; then the second thinning was performed to 150 μm, and then The annealing time is 3 hours under the condition of 600 degrees nitrogen in the high ...

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Abstract

The invention relates to the technical field of preparation of third-generation semiconductor materials, in particular to an epitaxial substrate embedded with a metal-based nitride material and a preparation method thereof, a pit array is manufactured on one surface of the substrate, a composite metal layer grows in the pit array, and the composite metal layer grows to cover the substrate; the specific preparation method comprises the following steps: carrying out graphical processing on one surface of a substrate to form a pit array extending into the substrate; growing a composite metal layer on one surface of the pit array of the substrate, wherein the composite metal layer grows to cover the substrate; and thinning the surface, back to the pit array, of the substrate. According to theinvention, the problem of poor heat dissipation of the third-generation nitride material and device is solved, so that the nitride material and device are always in a lower junction temperature statein the working process, and the reliability and performance of the nitride material and device are improved.

Description

technical field [0001] The invention relates to the technical field of preparation of third-generation semiconductor materials, in particular to an epitaxial substrate embedded with a metal-based nitride material and a preparation method thereof. Background technique [0002] At present, the third-generation semiconductor materials are basically grown on conventional substrates, such as silicon, sapphire, silicon carbide, aluminum nitride, gallium nitride lining and other substrates. The main disadvantage of conventional traditional substrates is that the thermal conductivity is relatively poor. In high-power and high-current applications, the high junction temperature of the device leads to performance deterioration, which has a negative impact on reliability. Due to the problem of heat dissipation, the performance of the third-generation semiconductor materials and devices is far from the theoretical value. In order to achieve better device performance and higher reliabil...

Claims

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Application Information

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IPC IPC(8): H01L23/373H01L23/13H01L23/14H01L21/304H01L21/306H01L21/3205
CPCH01L23/3736H01L23/13H01L23/14H01L23/3735H01L23/3733H01L21/306H01L21/304H01L21/32051
Inventor 王琦梁智文刘南柳汪青张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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