Epitaxial substrate embedded with metal-based nitride material and preparation method thereof
An epitaxial substrate and nitrogen-based technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of poor heat dissipation of third-generation nitride materials and devices, and achieve the goal of improving reliability and performance Effect
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[0033]Seefigure 2 As shown, the present invention relates to a method for preparing an epitaxial substrate with embedded metal-based nitride material, including the following steps:
[0034]S10. Perform a patterning process on a surface of the substrate to form an array of pits extending into the interior of the substrate;
[0035]S20. Growing a composite metal layer on one side of the pit array of the substrate, and the composite metal layer is grown to cover the substrate;
[0036]S30, thinning the side of the substrate facing away from the pit array.
[0037]First, the present invention performs patterning on the substrate to increase the contact area between the subsequent composite metal layer and the substrate, which is closer to the functional layer of the epitaxial material device to maximize the heat conduction path. Secondly, it can release the metal medium and traditional materials well. The size of the roughened surface can range from nanometers to micrometers due to thermal mismatc...
Example
[0051]First embodiment
[0052]The substrate selected in this embodiment is a 2-inch aluminum nitride substrate with a thickness of 430μm, a crystal orientation of 001, and a resistivity greater than 107Ω·cm. The aluminum nitride substrate is homogenized and developed through a semiconductor process And etching to form a pit array with a depth of 5μm on the surface; then use PVD to deposit a 0.1μm first copper layer on the pit array; then use electroless plating to continue to deposit a second copper layer on the pit array The second copper layer fills the pit array; finally, the third copper layer is electroplated by electroplating, and the thickness of the third copper layer is thickened to 150μm; finally, the aluminum nitride substrate is turned back to the concave One side of the pit array is thinned for the first time, thinning to 300μm, and then annealed in a medium temperature bottom annealing furnace under nitrogen at 600 degrees for 5 hours; then the second thinning is perform...
Example
[0054]The second embodiment
[0055]The substrate selected in this embodiment is a 2-inch aluminum nitride substrate with a thickness of 430 μm, a crystal orientation of 001, and a resistivity greater than 107Ω·cm. The aluminum nitride substrate is homogenized and developed through a semiconductor process And etching to form a pit array with a depth of 5μm on the surface; then use PVD to deposit a 0.1μm first copper layer on the pit array; then use electroless plating to continue to deposit a second copper layer on the pit array The second copper layer fills the pit array; finally, the third copper layer is electroplated by electroplating, and the thickness of the third copper layer is thickened to 150μm; finally, the aluminum nitride substrate is turned back to the concave One side of the pit array is thinned for the first time, thinning to 300μm, and then annealed in a medium temperature bottom annealing furnace under nitrogen at 600 degrees for 5 hours; then the second thinning is p...
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