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Restoring circuit for improving negative bias temperature instability of sensitive amplifier

A technology of sense amplifier, negative bias temperature, applied in instruments, static memory, reliability improvement and modification, etc., can solve problems such as device performance degradation, to suppress negative drift, improve static power consumption, improve performance and reliability Effect

Inactive Publication Date: 2015-04-29
SUZHOU KUANWEN ELECTRONICS SCI & TECH
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  • Application Information

AI Technical Summary

Problems solved by technology

This NBTI effect, which leads to device performance degradation, becomes more pronounced with increasing bias voltage on the gate and increasing temperature

Method used

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  • Restoring circuit for improving negative bias temperature instability of sensitive amplifier
  • Restoring circuit for improving negative bias temperature instability of sensitive amplifier

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Embodiment Construction

[0019] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0020] refer to figure 2 As shown, a recovery circuit for improving the temperature instability of the negative bias voltage of the sense amplifier includes a SRAM sense amplifier unit and an NBTI effect recovery unit:

[0021] Inside the dotted line box is the SRAM sense amplifier unit, the SRAM sense amplifier unit includes a bit line BLB, a bit line BL, a precharge signal terminal Precharge, and two PMOS transistors and three NMOS transistors, wherein the first PMOS transistor M1 The source of the first PMOS transistor M1 and the source of the second PMOS transistor M2 are commonly connected to the high-level terminal VDD, the gates are interconnected, the drain of the first PMOS transistor M1 is connected to the amplifier output terminal OUT and the drain of the first NMOS transistor M3, and the second PMOS The drain of the tra...

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PUM

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Abstract

The invention provides a restoring circuit for improving the negative bias temperature instability of a sensitive amplifier. The restoring circuit comprises an SRAM sensitive amplifier unit and an NBTI effect restoring unit, wherein the SRAM sensitive amplifier unit comprises a bit line BLB, a bit line BL, a precharging signal terminal Precharge, two PMOS transistors and three NMOS transistors; the NBTI effect restoring unit comprises an inverter INV, a third PMOS transistor M6, and a signal input terminal IN of a restoring unit. Through the adoption of the restoring circuit provided by the invention, the influence of an NBTI effect on the sensitive amplifier circuit is reduced, the performance and the reliability of the sensitive amplifier are improved, the power consumption of the circuit is lowered, the integral stability of a memory is improved, and the access performance of the memory is improved.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to a recovery circuit for improving the temperature instability of a negative bias voltage of a sensitive amplifier. Background technique [0002] With the increasing integration of semiconductor memory integrated circuits, the requirements for transistor performance are also increasing. Therefore, the requirements for the reliability of transistors are also increased. In the CMOS process, the negative gate temperature instability (NBTI) will greatly affect the working stability of the PMOS. [0003] The NBTI (negative bias temperature instability) effect occurs in the PMOS device, causing a series of degradation of its electrical parameters. When the gate of the device is under negative bias, the saturated drain current Idsat and transconductance Gm of the device continue to decrease, The absolute value of the threshold voltage increases continuously. This NBTI effect, which ...

Claims

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Application Information

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IPC IPC(8): H03K19/003G11C7/06
Inventor 翁宇飞李力南姜伟
Owner SUZHOU KUANWEN ELECTRONICS SCI & TECH
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