178 results about "Negative-bias temperature instability" patented technology

A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.

By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectrics may be improved, thereby reducing negative bias temperature instability effects in highly scaled P-channel transistors.

In a process of fabricating a narrow channel width PMOSFET device, the improvement of affecting reduction of negative bias temperature instability by use of F2 side wall implantation, comprising:a) forming a shallow trench isolation (STI) region in a substrate;b) forming a gate on a gate oxide in the substrate;c) forming a liner layer in said shallow trench isolation region and subjecting the liner layer to oxidation to form a STI liner oxidation layer;d) implanting F2 into side walls of the STI liner oxidation layer at a large tilted angle in sufficient amounts to affect reduction of negative bias temperature instability after a high density plasma fill of the STI F2 implanted liner oxidation layer; ande) filling the STI F2 implanted structure from step d) with a high density plasma (HDP) fill to affect reduction of negative bias temperature instability.

The invention discloses a method for testing reliability of semiconductor devices which have negative bias temperature instability (NBTI). The method comprises the following steps: measuring the NBTI curve of a first set of semiconductor devices; measuring the 1 / f noise power spectral density and drain current of the first set of semiconductor devices at a predetermined frequency under the condition that the first set of semiconductor devices is biased in a gate electric field; measuring the equivalent oxide layer thickness of the gate dielectric of the first set of semiconductor devices; measuring the 1 / f noise power spectral density and drain current of a second set of semiconductor devices at the predetermined frequency under the condition that the second set of semiconductor devices is biased in the gate electric field; measuring the equivalent oxide layer thickness of the gate dielectric of the second set of semiconductor devices; and evaluating the deterioration characteristic of the second set of semiconductor devices by using the NBTI curve of the first set of semiconductor devices. The method disclosed by the invention saves the time required for testing the reliability of a large number of semiconductor devices, and can not damage the second set of semiconductor devices.

The invention belongs to the technical field of integrated circuit test, and in particular relates to a circuit and a method for testing reliability of an integrated circuit. According to the core circuit of the testing circuit, auxiliary p-type metal oxide semiconductor field effect transistors (pMOSFETs) and n-type metal oxide semiconductor field effect transistors (nMOSFETs) are connected between every two stages of inverters of a ring oscillator (RO) and between a high level Vdd and low potential Vss, and a switch transistor is plugged in an input and output connecting line. By controlling the grid voltages of the auxiliary transistors and the switch transistor, normal oscillation of the RO can be realized in the core circuit, dynamic stress is applied to complementary metal oxide semiconductor field effect transistors (CMOSFETs) of the RO, and negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses are respectively applied to the pMOSFETs or the nMOSFETs of the RO. The testing circuit has the functions of: degradation measurement of the pMOSFETs in the RO under the NBTI stress, degradation measurement of the nMOSFETs under the PBTI stress, degradation measurement of the pMOSFETs under the HCI stress, degradation measurement of the nMOSFETs under the HCI stress, and comparison with degradation measurement of the CMOSFETs under the dynamic stress.

A system and method reduce stress caused by NBTI effects by determining if a trigger event has occurred and if so inverting all input data values to the memory and all output data values from the memory during a period of time defined by the determined trigger event. In one embodiment, the trigger event is an alternate memory power-up.

The invention provides a threshold voltage measuring method and a system, which are used for improving the accuracy of the measured threshold voltage and further improving the accuracy of a NBTI (Negative Bias Temperature Instability) test. The method comprises the following steps: acquiring the subthreshold slope of a semiconductor device; applying the stress on the device; measuring the linear leakage current of the device at the threshold measuring time point; calculating the threshold voltage of the threshold measuring time point according to the subthreshold slope and the linear leakage current value, wherein the process of measuring the linear leakage current comprises the steps of removing the stress; connecting the test voltage to the device; and measuring the linear leakage current of the device under the test voltage.

The invention describes a novel test structure and process to create the structure for performing automatic dynamic stress testing of PMOS devices for Negative Bias Temperature Instability (NBTI). The invention consists of an integrated inverter, two integrated electronic switches for switching from stress mode to device DC characterization measurement mode, and a PMOS FET device under test (DUT). The inverter assures the proper 180 degree phase relationship between the test device source and gate voltage while the imbedded electronic switches provide isolation of the test device during DC characterization testing. Another embodiment of the invention enables the testing of multiple devices under test (DUT's).