Threshold voltage measuring method and system

A threshold voltage and threshold technology, applied in the field of threshold voltage measurement methods and systems, can solve the problems of reducing NBTI test accuracy and large errors, and achieve the effect of reducing the impact of test results and improving accuracy

Inactive Publication Date: 2010-09-08
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the threshold voltage is measured for a long time, due to the existence of the NBTI recovery effect, the measured threshold voltage value will be a threshold voltage that has recovered to a certain extent, which will deviate from the actual threshold voltage value under the influence of stress, making the NBTI test The error is large, reducing the accuracy of NBTI test

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Threshold voltage measuring method and system
  • Threshold voltage measuring method and system
  • Threshold voltage measuring method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Regarding the problems mentioned in the background technology, since the existing technology uses scanning gate voltage to measure the threshold voltage at the threshold voltage measurement time point, the measurement time is relatively long. Therefore, if a single voltage can be used to measure the threshold voltage at the threshold voltage measurement time point , the measurement time at the threshold voltage measurement time point can be shortened, the influence of the NBTI recovery effect can be reduced, and the accuracy of the measured threshold voltage can be improved, thereby improving the accuracy of the NBTI test.

[0021] Based on the above idea, the embodiment of the present invention proposes the following threshold voltage measurement method, so as to improve the accuracy of the measured threshold voltage and further improve the accuracy of the NBTI test.

[0022] figure 1 It is a flow chart of the threshold voltage measurement method proposed by the embodi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a threshold voltage measuring method and a system, which are used for improving the accuracy of the measured threshold voltage and further improving the accuracy of a NBTI (Negative Bias Temperature Instability) test. The method comprises the following steps: acquiring the subthreshold slope of a semiconductor device; applying the stress on the device; measuring the linear leakage current of the device at the threshold measuring time point; calculating the threshold voltage of the threshold measuring time point according to the subthreshold slope and the linear leakage current value, wherein the process of measuring the linear leakage current comprises the steps of removing the stress; connecting the test voltage to the device; and measuring the linear leakage current of the device under the test voltage.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a threshold voltage measurement method and system. Background technique [0002] With the increase in the number of semiconductor devices integrated into an integrated circuit chip and the increase in the clock speed used by the chip, the geometric size of the semiconductor device is continuously reduced, which requires continuous improvement of the chip manufacturing process. [0003] The improvement of the manufacturing process has a great impact on the lifetime of a single device. For example, the manufactured device has a lifetime of 100 years. After the process is improved to meet the geometric size reduction, the manufactured device may have a lifetime of less than 10 years. Since a small change in device life may lead to the complete failure of the entire chip product, with the continuous improvement of the manufacturing process, the degree of impact on the device life is inc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 朱志炜
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap