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Test method for influence of total dose irradiation on PMOSFET negative bias temperature instability

A negative bias temperature, total dose irradiation technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc.

Active Publication Date: 2018-05-15
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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However, there are no relevant testing standards or testing specifications at home and abroad

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  • Test method for influence of total dose irradiation on PMOSFET negative bias temperature instability
  • Test method for influence of total dose irradiation on PMOSFET negative bias temperature instability

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[0031] A kind of total dose irradiation of the present invention is to the test method of PMOSFET negative bias temperature instability influence, and this method is by the total dose irradiation of test sample grouping and test parameter selection method, test sample and annealing method, test The composition of the negative bias temperature instability measurement method of the sample, the flow chart of the test method is as follows figure 1 As shown, the steps are as follows:

[0032] Test sample grouping and test parameter selection method:

[0033] a. Perform I on the same batch of PMOSFETs DS -V GS Curve test, calculate transconductance and threshold voltage, select 12 devices with similar threshold voltage as test samples. Sample numbering and grouping, 1-3# samples as pre-irradiation group, 4-6# samples as comparison group, 7-9# samples as irradiation test group, 10-12# samples as negative bias temperature unstable In the NBTI test group, increase the number of sam...

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Abstract

The invention relates to a method for testing the influence of total dose irradiation on the PMOSFET negative bias temperature instability. The method includes test sample grouping and test parameterselection; the total dose irradiation and annealing tests of the test sample; and the negative bias temperature instability measurement of the test sample. In order to ensure the consistency and accuracy of the test result, the sample is divided into a pre-irradiation group, a comparison group and two pre-test groups, and on the basis of the pre-test, the total dose irradiation and annealing testsare carried out on the pre-irradiation group under the determination condition, the comparison group and the pre-irradiation group are subjected to a negative bias temperature instability test underthe same condition, and the test result is compared, the influence of the total dose irradiation on the negative bias temperature instability of the sample is obtained. The method provided by the invention can represent the influence of the total dose irradiation on the negative bias temperature instability of a P-channel metal oxide semiconductor field effect transistor.

Description

technical field [0001] The invention relates to the technical field of reliability testing for special environment applications of microelectronic devices, in particular to a test method for the influence of total dose irradiation on PMOSFET negative bias temperature instability, and belongs to the technical field of microelectronics and anti-radiation technology. Background technique [0002] With the advancement of semiconductor technology, the feature size of metal oxide semiconductor (MOS) devices has entered the nanometer field. Applying nano-devices to spacecraft electronic systems can realize high-speed, low-power consumption, and miniaturization of the system. However, nano-devices have reliability problems such as negative bias temperature instability (NBTI), hot carriers, and gate dielectric breakdown over time, which will lead to device performance degradation and threaten system security. The negative bias temperature instability (NBTI) effect refers to the volt...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2642
Inventor 崔江维郑齐文魏莹孙静余学峰郭旗陆妩何承发任迪远
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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