47 results about "R-Phase" patented technology

Provided are thermochromic microparticles that comprise particles of rutile (R-phase) vanadium dioxide (VO2) and rutile titanium dioxide (TiO2). At least one of the vanadium dioxide (VO2) particles is grown on the titanium dioxide (TiO2) particles so as to be larger than said titanium dioxide (TiO2) particles and in a rod form.

A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.

It is possible to improve the CQI reception performance even when a delay is caused in a propagation path, a transmission timing error is caused, or a residual interference is generated between cyclic shift amounts of different ZC sequences. For the second symbol and the sixth symbol of the ACK/NACK signal which are multiplexed by RS of CQI, (+, +) or (−, −) is applied to a partial sequence of the Walsh sequence. For RS of CQI transmitted from a mobile station, + is added as an RS phase of the second symbol and − is added as an RS phase of the sixth symbol. A base station (100) receives multiplexed signals of ACK/NACK signals and CQI signals transmitted from a plurality of mobile stations. An RS synthesis unit (119) performs synthesis by aligning the RS phase of CQI.

The invention discloses a transformer operation control apparatus and method for suppressing magnetizing inrush current. A control portion 80 for a breaker 10 causes the breaker 10 to apply a current of a first apply phase (R phase) at a timing where a residual flux of R phase agrees with a steady magnetic flux. Thereafter, the control portion 80 determines whether or not the current measured by current measuring portions 40R, 40S, 40T exceeds a threshold value. When the measured current does not exceed the threshold value, the control portion 80 causes the breaker 10 to apply currents of the other two phases (S and T phases) at a timing where a voltage of R phase becomes zero. When the measured current exceeds the threshold value, the control portion 80 causes the breaker 10 to once shut off the current of R phase and to apply again the current of R phase.

A process to load a medical device comprising a shape memory material into a delivery system is described herein. According to one aspect, the method includes applying a force to the medical device to obtain a delivery configuration thereof, where the device is at a first temperature within an R-phase temperature range of the shape memory material during application of the force. The medical device is cooled in the delivery configuration to a second temperature at or below a martensite finish temperature of the shape memory material. The force is then removed from the medical device, and the device is loaded into a delivery system. Preferably, the medical device substantially maintains the delivery configuration during the loading process.

The invention provides a sintered NdFeB rare-earth permanent magnet material with modified grain boundary phase and a preparation method thereof. The material refers to the R-Fe-M-B-based rare-earth permanent magnet of ROF compound with ordered fcc structure in the grain boundary phase, wherein R is one or more of rare earth element Nd, Pr, Dy, Tb and Y, and M is one or more of Al, Cu, Ga, Nb, Mg, Si and Mo elements. The major elements of the grain boundary phase are R, O and F elements, and the ratio of R to O and F is approximately equal to 1:1:1 (atomic percent). The preparation method is that the temperatures and cooling rates of sintering and second tempering are controlled to ensure that the F atoms in the added fluoride which can fuse with the grain boundary rich-R phase of the NdFeB magnet and the O atoms in the grain boundary phase can be in ordered arrangement to form an ordered fcc grain boundary phase. The ordered fcc grain boundary phase has better demagnetizing and coupling functions, thus facilitating to increase the coercive force of the magnet and furthest reducing the dosages of Dy and Tb.

A control unit 13 of an electric power supply system causes, responsive to a closing command signal phi B, a switch 2 corresponding to R phase to be thrown at a timing when a stationary magnetic flux and a residual magnetic flux of R phase are coincident with each other and then subsequently causes other switches 3, 4 corresponding to S phase and T phase to be thrown at a timing which is delayed from a zero point of an alternating voltage of R phase by a predetermined phase angle of 0-30 degrees, such that the difference of the stationary magnetic flux and the residual magnetic flux of each of S phase and T phase is minimum. Therefore, an exciting incoming current which flows into a three-phase transformer 8 at a time of throwing a three-phase breaker 1 provided with interpole capacitors 5-7 can be suppressed.

The invention relates to a hardware receiver and method for achieving GNSS-R phase difference extraction. The hardware receiver comprises a code phase difference fast rough measurement module, a code phase difference accurate measurement module, a carrier phase difference estimation module, and a full-phase transformation and carrier phase difference correction module. The method is based on a FPGA and a DSP, achieves reflected signal effective coherent integration by using a FIFO to perform data time delay, uses a code phase difference rough measured value as an initial computation code phase different accurate measured value of a Gauss-Newton iteration algorithm, guides carrier phase difference solution by using a code phase difference accurate measured value, computes the initial phase values of a direct signal and a reflected signal by using full-phase FFT, and corrects a carrier phase difference final result by means of the comparison of the initial phase values. A hardware device may accurately process acquired direct navigation signals and reflected navigation signals in real time and may correct a carrier phase difference measurement error caused by a reflection plane.

The invention discloses a narrow-hysteresis submicron-scale shape memory alloy film and a preparation method thereof. An Ni-Ti film is prepared by utilizing a co-sputtering method of a high-vacuum direct current magnetron sputtering system. Pure metals Ni and Ti are adopted as target materials, and pure atom percentages are both 99.995%, the base vacuum pressure is more than 5*10<-5>Pa, the atmospheric pressure of Ar is 1Pa, the sputtering powers of the Ni and Ti are respectively 15W and 50W, the sputtering time is within 19-285min, the prepared film is subjected to crystallization treatment in a high-vacuum annealing furnace. The regulation on the martensite phase transformation act of the film results in the reduction of phase hysteresis of the film, and the B2-B19' phase regulation in the original blocky alloy is changed into B2-R phase transformation.

A process for inducing a two-way shape memory effect in a device forward of a shape memory alloy and a device made by the process are disclosed. The two-way memory effect occurs in the device in a temperature range of between about 5° C. to 25° C. wherein the training process is based on B2←→R phrase transformations. An R-phase formation or reorientation takes place in the device under stress whereupon the R-phase transforms into stress induced martenite. The device is subjected to thermocycling.

Method for controlling the properties of a structural element of an implantable medical device, wherein the structural element comprises a shape memory alloy (SMA), the method comprising promoting or inhibiting the in vivo formation of an R-phase crystalline structure, or combining the R-phase with the austenitic phase Merge or separate.

To improve the layout of main circuit parts of an inverter device, and the structure of the wiring between the parts, thereby accomplishing space saving for a substrate on which the circuit parts are mounted. In an inverter device in which an electromagnetic contactor, fuses, and input CTs are disposed between a semiconductor module and input terminal block disposed at upper and lower end portions of a substrate, and the parts are interconnected by a bus bar, with the electromagnetic contactor disposed with primary side terminals and secondary side terminals thereof facing the input terminal block and semiconductor module respectively, and the fuses and input CTs serially connected and arranged in parallel to the sides of the electromagnetic contactor, an R-phase and T-phase passing through the fuses and input CTs are such that the power source input terminals and the secondary side terminals of the electromagnetic contactor are connected by bus bars 7R-1 and 7T-1, and the primary side terminals of the electromagnetic contactor and the fuses are connected by bus bars 7R-2 and 7T-2, thus reducing the intervals between the electromagnetic contactor and the fuses, and accomplishing a space saving for the substrate.

The invention discloses a preparation method of a titanium-nickel-cobalt memory alloy. By adopting the method provided by the invention, the defects of an existing porous TiNiCo shape memory alloy preparation method that the porosity, pore diameter and pore shape are difficult to control, and the damping performance and other mechanical properties of an alloy product still need to be improved areovercome. An inner crystal grain size of a TiNiCo shape memory alloy treated by the method has a sub-micron order of magnitude; the fine crystal grain size and a separation phase can be used for reinforcing a TiNiCo shape memory alloy matrix so that the temperature of converting an R phase into a martensitic phase is reduced and a temperature range of the R phase is enlarged. Therefore, the R phase is used for providing convenient conditions; meanwhile, shape recovery properties of the alloy are improved, and the circulating stability of the alloy is improved.

The invention provides a phase-shifting mask with auxiliary phase areas. The phase-shifting mask comprises a tessellate array and a surrounding sub-resolution ratio auxiliary phase graph, wherein the tessellate array comprises an alternating phase-shifting area R having 180 degree of relative phase difference; the sub-resolution ratio auxiliary phase area R stays in the adjacent and corresponding phase-shifting area R and has 180 degree of relative phase difference relative to the phase-shifting area R; and the sub-resolution ratio auxiliary phase area R is configured in a way that reduces the unnecessary edge effect while using photo-etching to form photoresist characteristics. The invention also discloses a method for using the phase-shifting mask to form an LED.

The invention provides a nickel titanium alloy gradient flexible root canal file, which consists of a root canal file tip part, a root canal file middle part and a root canal file root part divided by the axis of a nickel titanium alloy gradient flexible root canal. The internal tissue of the root canal file tip part is a martensite M phase, the root canal file middle part is an R phase, and the root canal file root part is an austenite A phase. The invention also provides a making method of the nickel titanium alloy gradient flexible root canal file. The nickel titanium alloy gradient flexible root canal file provided by the invention effectively improves the use safety.

The invention relates to a method for inducing phase transition of a bismuth ferrite film. A layer of epitaxially grown single crystal film is inserted between BFO and a substrate to be used as a strain provider, the lattice mismatch degree of the single crystal film with the BFO film is -4% to -6%, and the necessary condition for inducing BFO to convert from R phase to T phase is satisfied, so the restriction on the substrate is broken through. The R-T phase transition of the BFO can also be realized on substrates having smaller lattice mismatch degree with the BFO.

A method and apparatus to support communication between components in different clock domains having a rational clock frequency ratio of N/D. In one embodiment, a combination of integer phase generators are employed to produce phase control signals during an overall cycle having N phases, wherein the overall cycle is a combination of primary cycles having D phases and an adjustment cycle having R phases, wherein R is the remainder of N/D. For clock frequency ratios of less than 2:1, a combination of 2:1 and 1:1 phase generators are employed. Clocking signals are generated by phase generator logic to provide timing control between communicating components in the different clock domains. In one embodiment, the phase generator logic is implemented in a programmable phase generator.

A transforming apparatus automatically adjusting the voltage of three-phase power supply comprising three input terminals, three output terminals, a Y-connection three-phase transformer, a switch group, and a switch switching circuit. The three input terminals are respectively connected to three main lines of the three-phase power supply, and the three output terminals are connected to a load installation. The Y-connection three-phase transformer comprises a core, an R-phase winding circuit, an S-phase winding circuit, and a T-phase winding circuit. In the R-phase winding circuit, an R-phase main winding, an R-phase first auxiliary winding, an R-phase first switch, an R-phase second auxiliary winding, and an R-phase third auxiliary winding are serially connected in that order between the input terminal Rin and a neutral point O, the output terminal Rout being connected to the other end of the R-phase main winding. An R-phase second switch is connected in parallel with a series circuit of the R-phase first auxiliary winding and the R-phase first switch. An R-phase third switch is connected in parallel with a series circuit of the R-phase first auxiliary winding, the R-phase first switch, and the R-phase second auxiliary winding. An R-phase fourth switch is connected in parallel with a series circuit of the R-phase second auxiliary winding and the R-phase third auxiliary winding. The switch switching circuit controls the switches based on the voltage levels of the output terminals to switch between first to fourth modes in an alternative manner.

The invention discloses a Doppler centroid estimation method based on a field programmable gate array (FPGA) and mainly solves the problems of a large amount of occupied resources and slow processing speed in estimation of Doppler centroid in the prior art. The realization method comprises the following steps that: a dislocation vector is generated by a first-order register from single distance unit orientation continuous data; conjugate multiplication is performed on the single distance unit orientation continuous data and the dislocation vector by calling a multiplying unit in the FPGA; accumulation and averaging are performed on the result obtained from the multiplication to obtain an autocorrelation value R of the single distance unit orientation continuous data; cosine value of R phase angle is calculated according to the autocorrelation value R; the cosine value of R phase angle of the autocorrelation value R is taken as a lookup address to perform arc cosine lookup to obtain the phase angle of the autocorrelation value R; the phase angle of the autocorrelation value R is corrected to obtain a Doppler centroid estimation result of the single distance unit orientation continuous data. The method lowers system power consumption, improves processing speed and can be used for real-time image formation of spaceborne synthetic aperture radar (SAR).

An operation circuit (25) is set to a conductive state in a case where a three-phase alternating-current power supply switching circuit (100) receives an R phase and an N phase. An internal switch (21 b) is set to a non-conductive state in a case where the state of the operation circuit (25) is the conductive state. One contactor (20) electrically connects an input terminal (8bN) to output terminals (91, 92, 93) in a case where the state of the operation circuit (25) is the conductive state. Another contactor (10) electrically disconnects input terminals (8aR, 8aS, 8aT) from the output terminals (91, 92, 93) in a case where the state of the internal switch (21b) is the non-conductive state.