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Method for inducing phase transition of bismuth ferrite film

A bismuth ferrite and thin film technology, applied in chemical instruments and methods, ion implantation plating, crystal growth, etc., can solve the problems of limited types, small lattice mismatch, and difficulty in obtaining high-quality T-phase BFO thin films.

Inactive Publication Date: 2019-01-15
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the lattice mismatch with BFO is small, the growth of high-quality BFO epitaxial films on such substrates is R-phase or R-like phase, and it is difficult to obtain high-quality epitaxially grown T-phase BFO films.
In the existing method of applying compressive strain to the BFO film through the substrate, the lattice mismatch between the substrate and the BFO determines the maximum strain that the film can theoretically achieve, and the types of substrates that meet the conditions for a specific film are limited, so This method has certain limitations

Method used

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  • Method for inducing phase transition of bismuth ferrite film

Examples

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Embodiment 1

[0030] The method for inducing the phase transition of a bismuth ferrite thin film in this embodiment uses pulsed laser deposition technology to deposit CCMO and BFO on STO, specifically including the following steps:

[0031] (1) Prepare experimental materials: STO (100) substrate, CCMO target, BFO target, energy meter, silver glue;

[0032] (2) Paste the STO substrate on the heater with silver glue, apply the silver glue evenly, and bake with the heater for 2 minutes;

[0033] (3) Load the heater with the substrate fixed into the cavity, and load the CCMO target and BFO target;

[0034] (4) Vacuum to 7×10 -4 Below Pa, start to feed pure oxygen and keep it at about 15Pa;

[0035] (5) Heating to 680°C at a rate of 20°C / min;

[0036] (6) Set the number of laser pulses to 1000, irradiate the CCMO target with laser, and deposit a CCMO film with a thickness of 10nm or 50nm on the STO;

[0037] (7) Adjust the temperature of the heater to 700°C at a rate of 10°C / min, and clean t...

Embodiment 2

[0042] The method for inducing the phase transition of a bismuth ferrite thin film in this embodiment uses pulsed laser deposition technology to deposit CCMO and BFO on LAST, specifically including the following steps:

[0043] (1) Prepare experimental materials: LAST (100) substrate, CCMO target, BFO target, energy meter, silver glue;

[0044] (2) Paste the LAST substrate on the heater with silver glue, apply the silver glue evenly, and bake with the heater for 2 minutes;

[0045] (3) Load the heater with the substrate fixed into the cavity, and load the CCMO target and BFO target;

[0046] (4) Vacuum to 7×10 -4 Below Pa, start to feed pure oxygen and keep it at about 15Pa;

[0047] (5) Heating to 680°C at a rate of 20°C / min;

[0048] (6) Set the number of laser pulses to 1000, irradiate the CCMO target with laser, and deposit a CCMO film with a thickness of 10nm or 50nm on the LAST;

[0049] (7) Adjust the temperature of the heater to 700°C at a rate of 10°C / min, and cle...

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Abstract

The invention relates to a method for inducing phase transition of a bismuth ferrite film. A layer of epitaxially grown single crystal film is inserted between BFO and a substrate to be used as a strain provider, the lattice mismatch degree of the single crystal film with the BFO film is -4% to -6%, and the necessary condition for inducing BFO to convert from R phase to T phase is satisfied, so the restriction on the substrate is broken through. The R-T phase transition of the BFO can also be realized on substrates having smaller lattice mismatch degree with the BFO.

Description

technical field [0001] The invention relates to the field of phase transition of bismuth ferrite, in particular to a method for inducing phase transition of bismuth ferrite thin film. Background technique [0002] Strain-induced bismuth ferrite BiFeO 3 (abbreviated as BFO) is one of the important ways of phase transition, and it has been widely used. At present, the method of using strain-induced phase transition is mainly to deposit BFO film on a single crystal substrate, and the substrate will cause a certain strain in the BFO film, thereby induced phase transition. [0003] The most widely used substrate lanthanum aluminate LaAlO 3 The lattice constant of (001) is 0.3792nm, the lattice constant of BFO whose ground state is a rhombohedral phase (R phase) is 0.3964nm, and the lattice mismatch between them is -4.3%. So when BFO in LaAlO 3 (abbreviated as LAO) epitaxial growth, theoretically, LAO will produce 4.3% compressive strain on BFO, and BFO undergoes R-T phase tra...

Claims

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Application Information

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IPC IPC(8): C30B23/02C30B29/22C23C14/28C23C14/08
CPCC23C14/08C23C14/28C30B23/02C30B29/22
Inventor 陈德杨邓雄陈超孙菲高兴森
Owner SOUTH CHINA NORMAL UNIVERSITY
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