Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Narrow-hysteresis submicron-scale shape memory alloy film and preparation method thereof

A memory alloy and hysteresis sub-technology, which is applied in the field of narrow hysteresis submicron shape memory alloy film and its preparation, can solve the problems of large phase transition lag and hinder the application of Ni-Ti alloy, and achieve the effect of increasing the working frequency

Inactive Publication Date: 2014-11-26
HAIAN INST OF HIGH TECH RES NANJING UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for Ni-Ti alloys, the phase transition lag is relatively large (generally around 30 K), which limits the working frequency (< 50 Hz) when it is used as a driver material, thus hindering the development of Ni-Ti alloys. Further application in the field of MEMS

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Narrow-hysteresis submicron-scale shape memory alloy film and preparation method thereof
  • Narrow-hysteresis submicron-scale shape memory alloy film and preparation method thereof
  • Narrow-hysteresis submicron-scale shape memory alloy film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The narrow hysteresis and submicron shape memory alloy thin film of the present invention is composed of two elements, Ni and Ti, wherein the atomic ratio of Ni element is 48-49%, and the atomic ratio of Ti element is 52-51%.

[0023] 1. Put the p-type (111) oriented Si single wafer in an acetone solution and ultrasonically clean it for 30 minutes to obtain a clean Si surface for growing thin films;

[0024] 2. Fix the cleaned Si substrate on the disk fixture, and then place it on the co-sputtering table of the sputtering platform;

[0025] 3. Select pure metal Ni and Ti targets, and the atomic percentage of purity is 99.995%. Place the target on two DC target platforms, and adjust the inclination angle of the two targets to 45 degrees to ensure that the center of the target is aligned with the co-sputtering platform;

[0026] 4. Use the mechanical pump to pump the cavity of the magnetron sputtering equipment to a vacuum higher than 6 Pa, then turn on the molecular pum...

Embodiment 2

[0035] The difference between this embodiment and the first embodiment is that the deposition time of the Ni-Ti thin film in step 8 is 29 minutes, and the rest of the steps are the same as those of the first embodiment.

Embodiment 3

[0037] The difference between this embodiment and the first embodiment is that the deposition time of the Ni-Ti thin film in step 8 is 40 min, and the rest of the steps are the same as those of the first embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a narrow-hysteresis submicron-scale shape memory alloy film and a preparation method thereof. An Ni-Ti film is prepared by utilizing a co-sputtering method of a high-vacuum direct current magnetron sputtering system. Pure metals Ni and Ti are adopted as target materials, and pure atom percentages are both 99.995%, the base vacuum pressure is more than 5*10<-5>Pa, the atmospheric pressure of Ar is 1Pa, the sputtering powers of the Ni and Ti are respectively 15W and 50W, the sputtering time is within 19-285min, the prepared film is subjected to crystallization treatment in a high-vacuum annealing furnace. The regulation on the martensite phase transformation act of the film results in the reduction of phase hysteresis of the film, and the B2-B19' phase regulation in the original blocky alloy is changed into B2-R phase transformation.

Description

technical field [0001] The invention relates to the technical field of memory alloys, in particular to a narrow hysteresis submicron shape memory alloy thin film and a preparation method thereof. Background technique [0002] Ni-Ti shape memory alloy thin films have gained widespread attention in the field of microelectromechanical systems due to their excellent properties such as high power density, large displacement and driving force, and low operating voltage. However, for Ni-Ti alloys, the phase transition lag is relatively large (generally around 30 K), which limits the working frequency (< 50 Hz) when it is used as a driver material, thus hindering the development of Ni-Ti alloys. Further applications in the field of micro-electromechanical. [0003] In Ni-Ti alloys, the martensitic transformation generally refers to the transformation from the parent phase (B2) to the martensitic phase (B19’). However, under certain conditions, the martensitic transformation can...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/14C23C14/35C23C14/58
Inventor 潘冠军孟祥康任华陆洪彬
Owner HAIAN INST OF HIGH TECH RES NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com