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SnO2-based gas sensitive material, and preparation method and application of SnO2-based gas sensitive material

A technology of gas-sensitive materials and sensitive chips, which is applied in the fields of material resistance, material analysis, and material analysis through electromagnetic means, and achieves the effect of simple preparation method, high sensitivity, and uniform preparation of particles

Active Publication Date: 2020-11-24
HEFEI MICRO NANO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is still one of the most challenging tasks to prepare metal-oxide-semiconductor-based gas-sensing materials with good long-term stability and high sensitivity.

Method used

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  • SnO2-based gas sensitive material, and preparation method and application of SnO2-based gas sensitive material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] Fabrication of MEMS gas sensors co-doped with Pd, Sb and Si by hydrothermal method

[0078] (1) Weigh crystalline tin tetrachloride (SnCl 4 ·5H 2 (0) 0.65g in a beaker, add 48mL of deionized water, put in a polytetrafluoroethylene magnet, stir to dissolve;

[0079] (2) Prepare acidic palladium chloride (PdCl) with a concentration of 0.05g / mL 2 ) solution, get 144 μ L in the solution of step (1), stir; Acidic palladium chloride (PdCl 2 ) solution is palladium chloride hydrochloric acid solution, and palladium chloride nitric acid solution or palladium chloride sulfuric acid solution can also be used to replace, wherein adopting palladium chloride hydrochloric acid solution will not be doped with other elements;

[0080] (3) Prepare 0.65g / mL antimony trichloride (SbCl 3 ) solution, take 14 μ L in the solution of step (2), stir; antimony trichloride (SbCl 3 ) solution is an aqueous solution of antimony trichloride;

[0081] (4) Take 9 μL of tetraethyl orthosilicate (...

Embodiment 2

[0088] Fabrication of MEMS gas sensors co-doped with Pd, Sb and Si by hydrothermal method

[0089] (1) Weigh crystalline tin tetrachloride (SnCl 4 ·5H 2 (0) 0.65g in a beaker, add 48mL of deionized water, put in a polytetrafluoroethylene magnet, stir to dissolve;

[0090] (2) Prepare acidic palladium chloride (PdCl) with a concentration of 0.05g / mL 2 ) solution, get 35 μ L in the solution of step (1), stir; Acid palladium chloride (PdCl 2 ) solution is palladium chloride hydrochloric acid solution, and palladium chloride nitric acid solution or palladium chloride sulfuric acid solution can also be used to replace, wherein adopting palladium chloride hydrochloric acid solution will not be doped with other elements;

[0091] (3) Prepare 0.65g / mL antimony trichloride (SbCl 3 ) solution, take 3.3 μ L in the solution of step (2), stir; Antimony trichloride (SbCl 3 ) solution is an aqueous solution of antimony trichloride;

[0092] (4) Take 2.1 μL of tetraethyl orthosilicate (...

Embodiment 3

[0099] Fabrication of MEMS gas sensors co-doped with Pd, Sb and Si by hydrothermal method

[0100] (1) Weigh crystalline tin tetrachloride (SnCl 4 ·5H 2 (0) 0.45g in a beaker, add 48mL of deionized water, put in a polytetrafluoroethylene magnet, stir to dissolve;

[0101] (2) Prepare acidic palladium chloride (PdCl) with a concentration of 0.05g / mL 2 ) solution, get 270 μ L in the solution of step (1), stir; Acid palladium chloride (PdCl 2 ) solution is palladium chloride hydrochloric acid solution, and palladium chloride nitric acid solution or palladium chloride sulfuric acid solution can also be used to replace, wherein adopting palladium chloride hydrochloric acid solution will not be doped with other elements;

[0102] (3) Prepare 0.65g / mL antimony trichloride (SbCl 3 ) solution, take 26.7 μ L in the solution of step (2), stir; Antimony trichloride (SbCl 3 ) solution is an aqueous solution of antimony trichloride;

[0103] (4) Take 16.9 μL of tetraethyl orthosilicat...

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PUM

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Abstract

The invention discloses a SnO2-based gas sensitive material, and relates to the technical field of gas sensors. The gas sensor is doped with Pd, Si and Sb elements on the basis of SnO2. The inventionalso provides a preparation method of the SnO2-based gas sensitive material, a preparation method of the MEMS sensitive chip, the prepared MEMS sensitive chip, a preparation method of the MEMS gas sensor and the prepared MEMS gas sensor. The material has the beneficial effects that SnO2 is used as a base material, and Pd, Si and Sb elements are doped at the same time so that the stability of the sensor is remarkably improved, and meanwhile, relatively high sensitivity is maintained.

Description

technical field [0001] The invention relates to the technical field of MEMS gas sensors, in particular to a SnO 2 Gas-based gas-sensing materials, preparation methods and applications of gas-sensing materials. Background technique [0002] Metal oxide semiconductors have the characteristics of high sensitivity, fast response / recovery, and low cost, so they have received extensive attention in the past ten years. Among them, tin dioxide (SnO 2 ) related research tops the list. A large amount of research work has focused on improving the sensitivity of the sensor and reducing its detection limit (the limit of detection, LOD), but few mention its long-term stability. [0003] single-component SnO 2 The stability is not good, and it is easy to fluctuate in the air. Although studies have shown that the use of silicon doping can improve its stability, a large doping ratio is usually used (generally [Si] / ([Si]+[Sn])> 10mol%). This will not only cause a sharp increase in res...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 姚冬婷
Owner HEFEI MICRO NANO SENSING TECH CO LTD
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