The invention discloses a preparation method and application of an ultrathin two-dimensional In2O3-In2S3
heterojunction. The preparation method comprises the following steps: S1, preparing flower-shaped In2S3 by adopting a hydrothermal method; s2, dispersing the flower-shaped In2S3 by using water as a
solvent, and preparing an In2S3
nanosheet by using an ultrasonic stripping method; s3, taking the flower-shaped In2S3 prepared in the step S1, and carrying out annealing treatment at the temperature of 450-550 DEG C to obtain In2O3; the preparation method comprises the following steps: dispersing In2O3 by using water as a
solvent, and preparing In2O3 nanosheets by using an ultrasonic stripping method; s4,
ethylene glycol and ethyl
alcohol are added into the In2S3
nanosheet solution, and an In2S3 solution is obtained;
formamide and ethyl
alcohol are added into the In2O3
nanosheet solution, and an In2O3 solution is obtained; the In2S3 solution is dropwise added to a
silicon wafer preheated to 45 DEG C, after the solution is volatilized, the temperature of the
silicon wafer is increased to 200 DEG C, the temperature is kept constant for 1 h, then the temperature is decreased to 45 DEG C, the In2O3 solution is dropwise added, and after the solution is volatilized, the two-dimensional In2O3-In2S3
heterojunction is formed on the
silicon wafer. According to the invention, the problem that the two-dimensional ultrathin In2O3-In2S3
heterojunction material is difficult to prepare is solved, and a novel heterojunction preparation method is created.