All-solid state electrochromic device preparation method and prepared electrochromic glass

A technology of electrochromic devices and electrochromic glass, which is applied in the fields of instruments, optics, nonlinear optics, etc., to achieve the effect of eliminating the deposition and growth process, avoiding the difficulty of preparation, and improving the electronic insulation performance and ion conductivity

Active Publication Date: 2015-09-09
ZHEJIANG SHANGFANG ELECTRONICS EQUIP
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Problems solved by technology

[0005] In order to solve the problem of preparing a uniform and low-defect ion-conducting layer in the existing preparation technology, the present invention provides a method for preparing an all-solid-state electrochromic device and the prepared electrochromic glass. Two electrochromic layers are used, and the following The upper electrode electrochromic layer is directly deposited and grown on the upper electrode electrochro

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  • All-solid state electrochromic device preparation method and prepared electrochromic glass

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Example Embodiment

[0022] A preparation method of all solid-state electrochromic devices (see attached figure 1 ), the bottom transparent conductive layer 2 is grown on the transparent substrate 1 by the physical vapor deposition method, the bottom electrochromic layer 3 is deposited and grown on the bottom transparent conductive layer, and the top electrochromic layer is directly deposited and grown on the bottom electrochromic layer 4. Deposit an ion source on the upper electrode electrochromic layer 5. The ion source is one or more of lithium or lithium oxide or lithium peroxide. After the ion source is deposited, the top transparent conductive layer is deposited and grown 6. The top transparent conductive layer After the deposition and growth, the device is prepared by heat treatment or light treatment.

[0023] The ion source deposited on the upper electrode electrochromic layer directly diffuses into the upper electrode electrochromic layer during the deposition process, and the amount of ion...

Example Embodiment

[0028] Example 1: All coatings are completed in a magnetron sputtering system, the bottom transparent conductive layer is made of indium tin oxide (ITO) with a thickness of 300nm, and the cathode electrochromic layer is made of tungsten oxide (WO 3 ), the thickness is 700nm, the anode electrochromic layer is nickel-tungsten oxide, the thickness is 320nm, the saturated lithium deposited on the anode electrochromic layer is used as an ion source to ionize it, and it is deposited on the completely ionized nickel-tungsten oxide Indium tin oxide (ITO) is the top transparent conductive layer with a thickness of 380nm. After the coating is completed, it is subjected to vacuum annealing at 400°C for 30 minutes, and the vacuum degree is 10 -6 torr. The prepared electrochromic glass of 370mm×470mm can be completely discolored within 3min. After discoloration, the transmittance at 550nm in the visible light region is less than 3%, and the transmittance after fading is about 65%.

Example Embodiment

[0029] Example 2: The bottom transparent conductive layer is grown by chemical vapor method to grow fluorine-doped tin oxide (FTO), and the cathode electrochromic layer of tungsten oxide (WO) is grown on it by reactive magnetron sputtering. 3 ), the thickness is 560nm; the anode electrochromic layer of nickel and aluminum oxide is grown by reactive magnetron sputtering, the thickness is 280nm; the mixture of lithium oxide and lithium is deposited as the ion source, after ionizing the anode electrochromic layer, magnetron sputtering growth Indium tin oxide (ITO) is the top transparent conductive layer; after the coating is completed, it is annealed in the atmosphere at 300°C for 3 hours, and the prepared electrochromic glass of 370mm×470mm can completely change color within 2 minutes. After the color change, it will transmit through 550nm in the visible light region. The rate is less than 3%, and the transmittance after fading is about 65%.

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Abstract

The invention relates to an all-solid state electrochromic device preparation method and prepared electrochromic glass, and solves the technical problems of complicated process, low yield and the like in existing electrochromic device preparation. A bottom transparent conducting layer, a lower pole electrochromic layer, an upper pole electrochromic layer and a top transparent conducting layer are sequentially deposited and grown on a transparent substrate, the upper pole electrochromic layer is directly deposited and grown on the lower pole electrochromic layer, an ion source is deposited on the upper pole electrochromic layer, the top transparent conducting layer is deposited and grown after the ion source is deposited, and finally, the device is prepared by heat treatment or optical treatment. Compared with traditional preparation technology, growth of an ion conduction layer is omitted, the technological process is simplified, yield is improved, and cost is reduced.

Description

technical field [0001] The invention relates to the field of electrochromic, especially a method for preparing an all-solid-state electrochromic device and the prepared electrochromic glass. Compared with the preparation technology of traditional electrochromic devices, the present invention does not deposit and grow special The ion conducting layer, by directly depositing and growing the upper electrode electrochromic layer on the lower electrode electrochromic layer, and then depositing an ion source on the upper electrode electrochromic layer, the fully ionized upper electrode electrochromic layer simultaneously acts as an ion The functions of storage, ion conduction and electrochromism simplify the device manufacturing process, and improve the manufacturing stability and yield. Background technique [0002] Electrochromism refers to the reversible oxidation or reduction reaction of the material under the action of the polarity and intensity changes of the applied electri...

Claims

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Application Information

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IPC IPC(8): G02F1/15C03C17/34C03C17/36
CPCC03C17/3417C03C17/3452G02F1/1525
Inventor 许倩斐李军赵军
Owner ZHEJIANG SHANGFANG ELECTRONICS EQUIP
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