Crater-type graphical sapphire substrate and preparation method thereof

A technology for patterning sapphire and sapphire substrates, which is applied to the photolithographic process of the patterned surface, optical mechanical equipment, instruments, etc., which can solve the problems of high cost of imprinting templates and restrictions on the commercial application of nanoimprinting

Active Publication Date: 2014-12-03
PEKING UNIV
View PDF7 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of preparing VPSS using nanoimprint technology, since the size of the imprint template pattern is on the order of submicron, electron beam exposure technology is generally required to prepare it, resulting in high cost of imprint template, which greatly limits the commercial application of nanoimprint.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crater-type graphical sapphire substrate and preparation method thereof
  • Crater-type graphical sapphire substrate and preparation method thereof
  • Crater-type graphical sapphire substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] In this embodiment, the sapphire substrate is etched by wet method, and the mask adopts a hard mask. The preparation method of the crater-shaped patterned sapphire substrate of this embodiment includes the following steps:

[0060] 1) Surface cleaning and anti-adhesion treatment of commercial PSS: The profile of PSS is as follows figure 1 As shown, the micron PSS pattern 31 on the sapphire substrate is a round bag arranged in a triangle, forming a protrusion array. The bottom diameter of the round bag is 2 microns, the height is 1.5 microns, and the period is 3 microns; Adhesive, wash the PSS and soak it in the anti-adhesive agent for 1 to 10 minutes, and form a trimethylfluorosilane monomolecular anti-adhesive layer 4 on the surface of the PSS after drying, such as figure 2 shown, and volatilize excess molecules.

[0061] 2) transfer the micron PSS pattern 31 to the intermediate polymer template IPS by hot embossing: use the hot embossing function of the nanoimprint ...

Embodiment 2

[0069] In this embodiment, the sapphire substrate is etched by dry method, and the mask adopts a hard mask. The preparation method of the crater-shaped patterned sapphire substrate of this embodiment includes the following steps:

[0070] 1) with embodiment one.

[0071] 2) Same as embodiment one.

[0072] 3) successively adopt acetone, ethanol and deionized water to clean the surface of the sapphire substrate 1, after cleaning, vapor-deposit a layer of hard mask 211 with high selective ratio on the surface of the sapphire substrate, such as Ni, Mo, W, etc. The thickness is 100 nanometers; then, spin-coat 150-500 nanometers of nanoimprint adhesive on the hard mask; for hard masks with poor adhesion, it is necessary to spray on the hard mask before coating the nanoimprint adhesive Corresponding tackifier; after spin-coating the nano-imprint adhesive 210, pre-baking under high temperature conditions, the temperature is 100° C., and the time is 5 minutes.

[0073] 4) Same as em...

Embodiment 3

[0078] In this embodiment, the sapphire substrate is etched by a dry method, and nanoimprinting glue is used as a mask. The method for preparing a crater-shaped patterned sapphire substrate in this embodiment includes the following steps:

[0079] 1) Since the nanoimprinting glue is used as a mask in step 5), and the selection ratio of nanoimprinting glue and sapphire etching is small, the annular protrusion needs to be higher than the unembossed glue layer to reach more than 1 micron, so It is necessary to select a PSS with a steep sidewall of the protrusion, an angle of 60°-80° to the substrate, and a height of the protrusion of 1.5-2 microns as the template, and the other is the same as in the first embodiment.

[0080] 2) Same as embodiment one.

[0081] 3) Use acetone, ethanol and deionized water to clean the surface of the sapphire substrate 1 successively. After cleaning, spin-coat a nano-imprint adhesive with a high ratio as a mask on the sapphire substrate. The thickn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
heightaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a crater-type graphical sapphire substrate and a preparation method thereof. An ordinary commercial micrometer PSS substrate is used as an imprint template, rather than a customized imprint template is used, patterns are simple, the expense is low, and the problem that the imprint template is difficult to prepare and the cost is high can be ingeniously solved; meanwhile, an annular mask is prepared by utilizing a nanoimprint technology, a high-quality VPSS can be acquired by combining a sapphire etching technology, and the commercialization of the VPSS can be facilitated; by adopting the secondary imprint method and the IPS technology, the patterns on the imprint template are prevented from being directly transferred onto a nano imprint adhesive which is coated on an epitaxial slice in a spinning mode, and the breaking of the template can be avoided; STU is collectively imprinted by adopting hot pressing and ultraviolet imprinting, so that the output efficiency and repeatability can be improved. Compared with the ordinary micrometer PSS, the crater-type graphical sapphire substrate has more lateral epitaxial components and larger reflection area, so that the improvement of the light emitting efficiency of the LED can be better facilitated.

Description

technical field [0001] The invention relates to a patterned sapphire substrate PSS technology, in particular to a crater-shaped patterned sapphire substrate prepared by a nano-imprint method and a preparation method thereof. Background technique [0002] Patterned sapphire substrate PSS is a sapphire substrate with periodic microstructure patterns produced on the surface by certain technological means. Generally, there is a large lattice mismatch (up to 16%) and thermal expansion coefficient mismatch (34%) between the sapphire substrate and the GaN material, which will generate a large number of defects during the epitaxial process, causing an increase in non-radiative recombination centers and increasing reflection. The internal quantum efficiency and reliability of the device are reduced; at the same time, due to the large difference between the refractive index of sapphire (about 1.7) and GaN material (about 2.5), the photons generated in the active region undergo multipl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00H01L33/00H01L33/22H01L33/16
Inventor 陈志忠蒋盛翔姜显哲付星星姜爽于彤军张国义
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap