77results about How to "Increase photosensitive area" patented technology

The invention discloses a method for manufacturing thin film transistor array substrate and liquid crystal display panel, the method for manufacturing thin film transistor array substrate integrates the manufacturing of an optical sensor, a photosensitive dielectric layer is formed between a transparent conductive layer and a metal electrode to sense the external light. As the optical sensor uses the transparent conductive layer as an electrode, the external light can directly irradiate the photosensitive dielectric layer through the transparent conductive layer, dramatically increasing the sensitization area of the optical sensor and promoting the light sensing performance. In addition, another side of the photosensitive dielectric layer is metal electrode, therefore efficiently preventing the backlight from directly irradiating the photosensitive dielectric layer and avoiding the noise.

The invention discloses a touch panel and a manufacturing method thereof as well as a display device, and belongs to the field of touch control. The control panel comprises a plurality of first signal lines and a plurality of second signal lines that cross one another to define a plurality of sub-pixel areas including a pixel opening area; a transistor and a photosensitive element are disposed in each sub-pixel area, wherein the gate of the transistor is connected to one of the plurality of first signal lines, and one of the source and the drain is connected to one of the plurality of second data lines, while the other one is connected to the first pole of the photosensitive element in the respective sub-pixel area, wherein the photosensitive element is disposed in a sub-pixel area except for the disposal area of the transistor and the pixel opening area. The touch panel also comprises a transparent electrode layer. The second pole of each photosensitive element is connected to the transparent electrode layer. In addition, each photosensitive element is configured to generate a light intensity sensing signal between the first pole and the second pole thereof based on the detected light intensity. According to the invention, full-screen fingerprint acquisition of a display device may be achieved.

The invention discloses a ZnSe nano-photoelectric detector and a preparation method thereof, an insulating substrate, a photosensitive layer and an electrode are sequentially arranged on a structural layer of the detector from bottom to top, and the ZnSe nano-photoelectric detector is characterized in that the photosensitive layer comprises n type doped ZnSe nanowires. The preparation method comprises the following steps: adopting the chemical vapor deposition method for synthesizing and preparing the n type doped ZnSe nanowires, realizing n type doping through in-situ doping during the synthesis process, utilizing the technologies including photoetching, electron bean and pulsed laser deposition for preparing source and drain electrodes and further preparing the ZnSe nano-photoelectric detector. The n type doped ZnSe nanowires are adopted in the photosensitive layer in the detector, thereby effectively enhancing electrical signals of the nano-photoelectric detector and improving the switching ratio; furthermore, the preparation method is simple, and the ZnSe nanowires can be arranged in parallel, thereby increasing the photosensitive area and further improving the electrical signals.

The invention discloses an arrayed photoelectric detector in a wireless laser communication device, belonging to the technical field of wireless laser communication. In consideration of a restriction relation among a frequency response bandwidth, a photosensitive surface area and an eyesight diaphragm, the prior art requires the existence of a precise mechanical servo tracking system. According to the invention, a transimpedance detector is formed by a photosensitive element P and a sampling resistor R0 which are connected in series; a detected optical power voltage signal is amplified by a prepositioned amplifier and a master amplifier in turns; a plurality of the photosensitive elements P are arrayed to form a photosensitive element array; each photosensitive element P together with one sampling circuit R0 forms one transimpedance detector; and each transimpedance detector is connected with the prepositioned amplifier; an output end of each prepositioned amplifier is divided into two paths to be respectively connected with a multipath A/D (analogue-to-digital) sampler and a multipath gating device; a controller is connected between the multipath A/D sampler and the multipath gating device; and the output end of the multipath gating device is connected with the main amplifier. The detector is applied to a portable wireless laser communication system, realizes synchronous receiving and tracking of laser communication signals, and adopts a photoelectric tracking way.

The invention relates to a pixel unit of an image sensor. The pixel unit comprises a transmitting gate, a source follower, a reset transistor and a photodetector, wherein the reset transistor is controlled by a word line switch, and the output of the reset transistor is connected to a floating diffusion (FD) region so as to control the source follower; and the photodetector is used for transmitting optical signals to a bit line through the transmitting gate and the source follower. In the embodiment, a first power supply generates a second power supply through a power switch, and the second power supply supplies power to the reset transistor and the source follower. In another embodiment, the first power supply supplies power to the source follower, the first power supply is adjusted by an adjuster to generate the second power supply, and the second power supply supplies power to the reset transistor through a second power switch.

The invention discloses a near-distance imaging method and a mobile terminal. The method includes the steps: judging whether a photographed object is in an object distance range capable of clearly imaging by the mobile terminal or not to determine whether a black and white fixed focus camera is started or not; starting the black and white fixed focus camera, and executing shooting operation if thephotographed object is in the object distance range. Under application scenes of near-distance topic shooting, the mobile terminal can present clear topic shooting images in the shortest time according to rapid focusing characteristics of the black and white fixed focus camera, the mobile terminal further present more image details according to the characteristics of large sensing areas and highpixel size of a black and white sensor in the black and white fixed focus camera, so that the quality of black and white images shot by the black and white fixed focus camera is higher than that of acolor image shot by a variable focal camera under the condition of the same sensor size, topic shooting images are conveniently converted into test question contents, and the differentiation degree ofthe topic shooting images is improved. According to the method, near-distance imaging quality and efficiency can be improved.

The embodiment of the application provides a stacked chip, a manufacturing method and an electronic device, which can reduce the manufacturing cost of the stacked chip. The stacked chip includes: a carrier wafer having a first groove disposed therein; a first wafer arranged in the first groove; a second wafer stacked above the carrier wafer and the first wafer, the second wafer having a surface area larger than a surface area of the first wafer; and a redistribution layer located between the second wafer and the first wafer, wherein the second wafer is electrically connected with the first wafer through the redistribution layer. In the embodiment of the application, the first groove in the carrier wafer is used for providing support and stability for the first wafer, and the second wafer with a large area is stacked on the first wafer with a small area, so that the first wafers with small areas can be manufactured on the wafer as much as possible while a chip stacking structure is realized, the cost of the single first wafer is reduced, and the whole manufacturing cost is reduced.

The invention discloses an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate; a shallow trench isolation structure disposed in the semiconductor substrate; photodiodes disposed in the semiconductor substrate at the two sides of the shallow trench isolation structure; a groove disposed in the shallow trench isolation structure, the side wall of the groove exposing a part of the semiconductor substrate; and a grid structure disposed in the groove, the side wall of the grid structure being disposed on the surface of the side wall of the groove. The fill factor of the image sensor is improved.

The invention provides an AlGaN / GaN ultraviolet detector based on oblique ZnO nanowire array modulation, including a gateless AlGaN / GaN high electron mobility transistor and an oblique ZnO nanowire array grown in a gate region of the gateless AlGaN / GaN high electron mobility transistor. A GaN epitaxial layer in the gateless AlGaN / GaN high electron mobility transistor is a GaN layer of a semi-polar surface (11-22). The GaN epitaxial layer includes a GaN buffer layer, a GaN channel layer and a GaN cap layer. The GaN channel layer is located on an upper surface of the GaN buffer layer. The plane included angle between the oblique ZnO nanowire array and the gate region is between 30 and 35 DEG. Through obliquely growing the ZnO nanowire array in the gate region of the gateless AlGaN / GaN high electron mobility transistor, the detection efficiency of the detector is improved, and real-time, accurate and efficient detection of ultraviolet light intensity is realized.

The invention relates to an image processing method and device, electronic equipment and a storage medium, and the method comprises the steps: obtaining at least one frame of first image based on a first pixel arrangement mode of a photosensitive element when a photographing instruction is received; wherein the pixels with the same color component in the first pixel arrangement mode are distributed in a square array; obtaining at least one frame of second image based on a second pixel arrangement mode of the photosensitive element, the second pixel arrangement mode being a standard Bayer arrangement mode; and fusing the at least one frame of first image and the at least one frame of second image to obtain an image to be displayed. According to the technical scheme, the resolution ratio andthe light sensitivity of the obtained image needing to be displayed can be balanced, and the effect of enhancing the image quality is achieved.

The invention provides an abnormal pixel filtering method and device. The filtering method comprises the steps: acquiring a first depth image through a first camera, and acquiring a second depth image through a second camera; processing the first depth image to obtain a first point cloud image, and processing the second depth image to obtain a second point cloud image; indexing pixels in the first point cloud picture to obtain an indexing result; calculating a matching degree index of the pixels according to the index result; and setting a filtering threshold value, and filtering the pixel when the matching degree index of the pixel is judged to be greater than or equal to the filtering threshold value. The method has the advantages of few calculation steps, low calculation complexity and simple calculation principle, and can greatly improve the efficiency of judging abnormal pixels, thereby further improving the speed of filtering pixel noise. The device comprises a first camera, a second camera, an image processing unit, an index unit, a calculation unit, a judgment unit and a filtering execution unit, and the efficiency of filtering abnormal pixels is improved.

The invention provides a photoelectric detection substrate, a preparation method thereof, and a photoelectric detection device. The photoelectric detection substrate comprises a thin film transistor and a photodiode having coplanar structure, and the thin film transistor is a vertical channel structure. By forming a coplanar structure of the thin film transistor with a vertical channel structure and the photodiode, the invention effectively reduces the overall thickness of the photoelectric detection substrate, reduces the deformation of the substrate caused by stress, avoids damage caused bythe deformation of the substrate, and improves the yield of the product. At the same time, because of the coplanar structure, the thin film transistor and the photodiode can be fabricated simultaneously, the number of times of the patterning process are reduced, the preparation process is simplified, and the production cost is reduced. As the occupied area of the vertical channel structure thin film transistor is small, the photodiode photosensitive area can be increased, so that the detection efficiency can be improve and the resolution of the product can be improved.

The invention discloses a day and night confocal lens with a high pixel number, a large aperture and a large target surface. The confocal lens comprises a first lens to a tenth lens and a filter arranged along an optical axis in order from an object side to an image side. The first lens is a convex-concave negative power lens, the second lens is a concave-convex negative power lens, the third lensis a biconvex positive power lens, the fourth lens is a plano-convex positive power lens, the fifth lens is a biconcave negative power lens, the sixth lens is a biconvex positive power lens, the seventh lens is a biconcave negative power lens, the eighth lens is a biconcave negative power lens, the ninth lens is a biconvex positive power lens, and the tenth lens is a biconcave negative power lens. The confocal lens provided by the invention can realize the maximum aperture of F number 1.2 and adapt to a 4K image sensor of 1/1.8', and the day and night confocal effect can be achieved by switching an equal-thickness filter.

The embodiment of the invention discloses an image sensor and a manufacturing method thereof, and the image sensor comprises at least one pixel unit, wherein each pixel unit comprises a photosensitiveunit used for generating signal charges according to received optical signals; a transistor structure which is connected with the photosensitive unit and is used for outputting an image signal according to the signal charge, wherein the transistor structure comprises a channel structure, a gate structure covering a predetermined area of the channel structure, a source electrode structure locatedat a first end of the channel structure and a drain electrode structure located at a second end of the channel structure, and the second end is an opposite end of the first end, and the channel structure comprises at least two channels arranged side by side.

The invention provides a method for manufacturing an image sensor, comprising the steps of: providing a semiconductor substrate, which sequentially includes a top semiconductor layer, an insulating layer, and a supporting substrate from top to bottom; fabricating a photosensitive diode and a signal readout circuit on the top semiconductor substrate; on the layer; connecting the two through metal interconnection; wherein, the fabrication of the photodiode includes the steps of: selecting the fabrication region; forming the first and second doped regions respectively, the second doped region surrounds the first doped region, and There is a fully depleted region between them; the fully depleted region is doped; and the semiconductor substrate is annealed at high temperature. Correspondingly, the present invention also provides an image sensor. The present invention adopts a lateral photosensitive diode, and manufactures a three-layer surrounding structure of the first conductivity type doped region/full depletion region/second conductivity type doped region on the top semiconductor layer of the semiconductor substrate, which overcomes the conventional semiconductor Under the process, the photogenerated current is too small and the sensor sensitivity is too low.