78results about How to "Increase photosensitive area" patented technology

The invention discloses a method for manufacturing thin film transistor array substrate and liquid crystal display panel, the method for manufacturing thin film transistor array substrate integrates the manufacturing of an optical sensor, a photosensitive dielectric layer is formed between a transparent conductive layer and a metal electrode to sense the external light. As the optical sensor uses the transparent conductive layer as an electrode, the external light can directly irradiate the photosensitive dielectric layer through the transparent conductive layer, dramatically increasing the sensitization area of the optical sensor and promoting the light sensing performance. In addition, another side of the photosensitive dielectric layer is metal electrode, therefore efficiently preventing the backlight from directly irradiating the photosensitive dielectric layer and avoiding the noise.

The invention discloses a production method of a thin-film transistor array base plate. The production method integrates the production of a photosensor, and a photosensitive dielectric layer is formed between a transparent conducting layer and a metal electrode for sensing external light. The photosensor adopts the transparent conducting layer as an electrode, so the external light can penetrate the transparent conducting layer and directly irradiate on the photosensitive dielectric layer, thus significantly increasing the light-sensing area of the photosensor and promoting the optical sensing effectiveness thereof. Moreover, another side of the photosensitive dielectric layer can be a metal electrode, thereby effectively resisting the direct irradiation from a backlight source on the photosensitive dielectric layer and avoiding the noise effect. A production method of a LCD panel adopting the thin-film transistor array base plate is also proposed.

The invention discloses a high-speed enhanced ultraviolet silicon selective avalanche photodiode and a manufacturing method thereof. The photodiode comprises a P-type substrate, wherein an n well is arranged on the P-type substrate; a photosensitive window on the n well is a regularly octagonal concentric ring or is in array arrangement of a plurality of regularly octagonal concentric rings; and the doped types of the concentric rings are an n type and a p type at intervals. The photodiode has the advantages of high sensitivity, high responsiveness and high selectivity.

A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

The invention discloses a touch panel and a manufacturing method thereof as well as a display device, and belongs to the field of touch control. The control panel comprises a plurality of first signal lines and a plurality of second signal lines that cross one another to define a plurality of sub-pixel areas including a pixel opening area; a transistor and a photosensitive element are disposed in each sub-pixel area, wherein the gate of the transistor is connected to one of the plurality of first signal lines, and one of the source and the drain is connected to one of the plurality of second data lines, while the other one is connected to the first pole of the photosensitive element in the respective sub-pixel area, wherein the photosensitive element is disposed in a sub-pixel area except for the disposal area of the transistor and the pixel opening area. The touch panel also comprises a transparent electrode layer. The second pole of each photosensitive element is connected to the transparent electrode layer. In addition, each photosensitive element is configured to generate a light intensity sensing signal between the first pole and the second pole thereof based on the detected light intensity. According to the invention, full-screen fingerprint acquisition of a display device may be achieved.

A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

The invention comprises multi photodiodes lined up in the image sensor; the photodiodes have different sizes of sensing areas due to their different locations and the sizes of their sensing area are gradually increased from central area of the sensor to its edge in order to compensate the low sensibility caused by larger light angle.

The invention discloses an array polarization navigation sensor, comprising an optical lens structure, a photoelectric detection module and an information resolving circuit, wherein the optical lens structure comprises an optical filter groove, polarizing film grooves and a light path channel; the optical lens structure is provided with three polarizing film grooves used for indicating the installation direction of the polarizing films; a passage is connected to the bottom of the light path channel, the photoelectric detection module is a circuit board arranged with three CMOS sensors, and is fixedly connected with the optical lenses via a retaining screw; and the photoelectric detection module transmits signals to the information resolving circuit via a connector assembly for resolving navigation information. The array polarization navigation sensor is mainly used to solve the problem of few sampling sites and insufficient utilization of sky polarization information of the existing polarization navigation, and has the advantages of high precision, high integration level and reliable performance.

The invention discloses a ZnSe nano-photoelectric detector and a preparation method thereof, an insulating substrate, a photosensitive layer and an electrode are sequentially arranged on a structural layer of the detector from bottom to top, and the ZnSe nano-photoelectric detector is characterized in that the photosensitive layer comprises n type doped ZnSe nanowires. The preparation method comprises the following steps: adopting the chemical vapor deposition method for synthesizing and preparing the n type doped ZnSe nanowires, realizing n type doping through in-situ doping during the synthesis process, utilizing the technologies including photoetching, electron bean and pulsed laser deposition for preparing source and drain electrodes and further preparing the ZnSe nano-photoelectric detector. The n type doped ZnSe nanowires are adopted in the photosensitive layer in the detector, thereby effectively enhancing electrical signals of the nano-photoelectric detector and improving the switching ratio; furthermore, the preparation method is simple, and the ZnSe nanowires can be arranged in parallel, thereby increasing the photosensitive area and further improving the electrical signals.

The invention relates to a backside illuminated global exposure pixel unit structure and a manufacturing method. The pixel unit structure comprises a substrate at the upper part and a dielectric structure located at the lower part, wherein a plurality of photodiodes are formed in the substrate; a pass transistor grid polycrystalline layer, a light blocking block layer and a storage capacitor are sequentially formed in the dielectric structure from top to bottom; and the light blocking block layer is used for blocking light which penetrates through the photodiodes. Therefore, the influence of incident light on a charge signal in the signal storage capacitor can be avoided; the capacitance of the storage capacitor is increased; readout noise is reduced; the area of the photodiodes for photoreception in the pixel unit can also be increased; the sensitivity of the global exposure pixel unit is improved; and a high-quality image can be finally obtained by an image sensor.

A formation method for double-shallow trench isolator includes that an oxide layer and a hard mask layer are formed on the surface of a substrate, and the substrate is provided with a first area and a second area; the hard mask layer and the oxide layer on the first area are etched till the surface of the substrate is exposed, and the exposed surface of the substrate forms a first part area; the hard mask layer is taken as a mask to have the first part area further etched to form a first shallow trench; the first shallow trench is protected, the hard mask layer and the oxide layer on the second area are etched till the surface of the substrate is exposed, and the exposed surface of the substrate forms a second part area; the hard mask layer is taken as the mask to have the first shallow trench and the second part area further etched till the first shallow trench forms a third shallow trench and forms a second shallow trench of the second area. By the formation method, the double-shallow trench is stable in isolation shape, high in uniformity and good in feature.

The invention discloses an arrayed photoelectric detector in a wireless laser communication device, belonging to the technical field of wireless laser communication. In consideration of a restriction relation among a frequency response bandwidth, a photosensitive surface area and an eyesight diaphragm, the prior art requires the existence of a precise mechanical servo tracking system. According to the invention, a transimpedance detector is formed by a photosensitive element P and a sampling resistor R0 which are connected in series; a detected optical power voltage signal is amplified by a prepositioned amplifier and a master amplifier in turns; a plurality of the photosensitive elements P are arrayed to form a photosensitive element array; each photosensitive element P together with one sampling circuit R0 forms one transimpedance detector; and each transimpedance detector is connected with the prepositioned amplifier; an output end of each prepositioned amplifier is divided into two paths to be respectively connected with a multipath A / D (analogue-to-digital) sampler and a multipath gating device; a controller is connected between the multipath A / D sampler and the multipath gating device; and the output end of the multipath gating device is connected with the main amplifier. The detector is applied to a portable wireless laser communication system, realizes synchronous receiving and tracking of laser communication signals, and adopts a photoelectric tracking way.

A formation method for double-shallow trench isolator includes that an oxide layer and a hard mask layer are formed on the surface of a substrate, and the substrate is provided with a first area and a second area; the hard mask layer and the oxide layer on the first area and the second area are etched till the surface of the substrate is exposed, the exposed surface of the first area forms a first part area, and the exposed surface of the second area forms a second part area; the hard mask layer is a mask, the first part area is etched to form a first shallow trench, and the second part area is etched to form a second shallow trench; the second shallow trench is protected, and the mask is taken as the hard mask layer to have the first shallow trench further etched to form a third shallow trench. By the formation method, the double-shallow trench is stable in isolation shape, high in uniformity and good in feature.

The invention discloses a laser particle size analyzer. The laser particle size analyzer comprises a laser light source for emitting a laser beam, a sample placement device for holding a sample to be measured, a photodetector which is used for receiving scattered lights produced by the laser beam passing through the sample to be measured and transforming the scattered lights into a scattered light energy distribution graph and is a concentric array photodetector composed of a plurality of polygonal light emitting diodes, and a calculator for calculating particle size distribution of the sample to be measured according to the scattered light energy distribution graph. Based on the concentric array photodetector composed of a plurality of polygonal light emitting diodes, pixels simultaneously in two adjacent rings are fewer so that a pixel use ratio is high and a laser particle size analyzer detection photosensitive area is increased.

The invention relates to a pixel unit of an image sensor. The pixel unit comprises a transmitting gate, a source follower, a reset transistor and a photodetector, wherein the reset transistor is controlled by a word line switch, and the output of the reset transistor is connected to a floating diffusion (FD) region so as to control the source follower; and the photodetector is used for transmitting optical signals to a bit line through the transmitting gate and the source follower. In the embodiment, a first power supply generates a second power supply through a power switch, and the second power supply supplies power to the reset transistor and the source follower. In another embodiment, the first power supply supplies power to the source follower, the first power supply is adjusted by an adjuster to generate the second power supply, and the second power supply supplies power to the reset transistor through a second power switch.

The invention discloses a near-distance imaging method and a mobile terminal. The method includes the steps: judging whether a photographed object is in an object distance range capable of clearly imaging by the mobile terminal or not to determine whether a black and white fixed focus camera is started or not; starting the black and white fixed focus camera, and executing shooting operation if thephotographed object is in the object distance range. Under application scenes of near-distance topic shooting, the mobile terminal can present clear topic shooting images in the shortest time according to rapid focusing characteristics of the black and white fixed focus camera, the mobile terminal further present more image details according to the characteristics of large sensing areas and highpixel size of a black and white sensor in the black and white fixed focus camera, so that the quality of black and white images shot by the black and white fixed focus camera is higher than that of acolor image shot by a variable focal camera under the condition of the same sensor size, topic shooting images are conveniently converted into test question contents, and the differentiation degree ofthe topic shooting images is improved. According to the method, near-distance imaging quality and efficiency can be improved.

The embodiment of the application provides a stacked chip, a manufacturing method and an electronic device, which can reduce the manufacturing cost of the stacked chip. The stacked chip includes: a carrier wafer having a first groove disposed therein; a first wafer arranged in the first groove; a second wafer stacked above the carrier wafer and the first wafer, the second wafer having a surface area larger than a surface area of the first wafer; and a redistribution layer located between the second wafer and the first wafer, wherein the second wafer is electrically connected with the first wafer through the redistribution layer. In the embodiment of the application, the first groove in the carrier wafer is used for providing support and stability for the first wafer, and the second wafer with a large area is stacked on the first wafer with a small area, so that the first wafers with small areas can be manufactured on the wafer as much as possible while a chip stacking structure is realized, the cost of the single first wafer is reduced, and the whole manufacturing cost is reduced.

The invention discloses an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate; a shallow trench isolation structure disposed in the semiconductor substrate; photodiodes disposed in the semiconductor substrate at the two sides of the shallow trench isolation structure; a groove disposed in the shallow trench isolation structure, the side wall of the groove exposing a part of the semiconductor substrate; and a grid structure disposed in the groove, the side wall of the grid structure being disposed on the surface of the side wall of the groove. The fill factor of the image sensor is improved.

The invention provides an AlGaN / GaN ultraviolet detector based on oblique ZnO nanowire array modulation, including a gateless AlGaN / GaN high electron mobility transistor and an oblique ZnO nanowire array grown in a gate region of the gateless AlGaN / GaN high electron mobility transistor. A GaN epitaxial layer in the gateless AlGaN / GaN high electron mobility transistor is a GaN layer of a semi-polar surface (11-22). The GaN epitaxial layer includes a GaN buffer layer, a GaN channel layer and a GaN cap layer. The GaN channel layer is located on an upper surface of the GaN buffer layer. The plane included angle between the oblique ZnO nanowire array and the gate region is between 30 and 35 DEG. Through obliquely growing the ZnO nanowire array in the gate region of the gateless AlGaN / GaN high electron mobility transistor, the detection efficiency of the detector is improved, and real-time, accurate and efficient detection of ultraviolet light intensity is realized.

The invention relates to an image processing method and device, electronic equipment and a storage medium, and the method comprises the steps: obtaining at least one frame of first image based on a first pixel arrangement mode of a photosensitive element when a photographing instruction is received; wherein the pixels with the same color component in the first pixel arrangement mode are distributed in a square array; obtaining at least one frame of second image based on a second pixel arrangement mode of the photosensitive element, the second pixel arrangement mode being a standard Bayer arrangement mode; and fusing the at least one frame of first image and the at least one frame of second image to obtain an image to be displayed. According to the technical scheme, the resolution ratio andthe light sensitivity of the obtained image needing to be displayed can be balanced, and the effect of enhancing the image quality is achieved.

The invention discloses an unmanned ship-mounted solar panel carrying device capable of being folded and unfolded autonomously. The device is mainly composed of a flexible solar panel structure, an arched support structure and a recycling box structure. When the device works, a solar panel is unfolded into an arch shape, the photosensitive area of the solar panel is increased, and the utilization rate of solar energy is increased; the arched support is designed to be in a retractable form, a steering engine is installed on the lower portion of the arched support, the steering engine is controlled to lift the arched support during work, and the steering engine is controlled to retract the arched support to a ship deck after work is received; a motor and a folding and unfolding mechanism are installed in the recycling box structure, the motor provides power for folding and unfolding of the solar panel, and the folding and unfolding mechanism is used for recycling the solar panel. According to the device, the working state is changed according to a received client control instruction, so that the solar panel is automatically folded and unfolded, and the influence of the solar panel carrying device on the navigation performance of the unmanned ship in the navigation process of the unmanned ship is reduced.

The invention provides an abnormal pixel filtering method and device. The filtering method comprises the steps: acquiring a first depth image through a first camera, and acquiring a second depth image through a second camera; processing the first depth image to obtain a first point cloud image, and processing the second depth image to obtain a second point cloud image; indexing pixels in the first point cloud picture to obtain an indexing result; calculating a matching degree index of the pixels according to the index result; and setting a filtering threshold value, and filtering the pixel when the matching degree index of the pixel is judged to be greater than or equal to the filtering threshold value. The method has the advantages of few calculation steps, low calculation complexity and simple calculation principle, and can greatly improve the efficiency of judging abnormal pixels, thereby further improving the speed of filtering pixel noise. The device comprises a first camera, a second camera, an image processing unit, an index unit, a calculation unit, a judgment unit and a filtering execution unit, and the efficiency of filtering abnormal pixels is improved.

The invention provides a photoelectric detection substrate, a preparation method thereof, and a photoelectric detection device. The photoelectric detection substrate comprises a thin film transistor and a photodiode having coplanar structure, and the thin film transistor is a vertical channel structure. By forming a coplanar structure of the thin film transistor with a vertical channel structure and the photodiode, the invention effectively reduces the overall thickness of the photoelectric detection substrate, reduces the deformation of the substrate caused by stress, avoids damage caused bythe deformation of the substrate, and improves the yield of the product. At the same time, because of the coplanar structure, the thin film transistor and the photodiode can be fabricated simultaneously, the number of times of the patterning process are reduced, the preparation process is simplified, and the production cost is reduced. As the occupied area of the vertical channel structure thin film transistor is small, the photodiode photosensitive area can be increased, so that the detection efficiency can be improve and the resolution of the product can be improved.

The invention discloses a day and night confocal lens with a high pixel number, a large aperture and a large target surface. The confocal lens comprises a first lens to a tenth lens and a filter arranged along an optical axis in order from an object side to an image side. The first lens is a convex-concave negative power lens, the second lens is a concave-convex negative power lens, the third lensis a biconvex positive power lens, the fourth lens is a plano-convex positive power lens, the fifth lens is a biconcave negative power lens, the sixth lens is a biconvex positive power lens, the seventh lens is a biconcave negative power lens, the eighth lens is a biconcave negative power lens, the ninth lens is a biconvex positive power lens, and the tenth lens is a biconcave negative power lens. The confocal lens provided by the invention can realize the maximum aperture of F number 1.2 and adapt to a 4K image sensor of 1 / 1.8', and the day and night confocal effect can be achieved by switching an equal-thickness filter.

The embodiment of the invention discloses an image sensor and a manufacturing method thereof, and the image sensor comprises at least one pixel unit, wherein each pixel unit comprises a photosensitiveunit used for generating signal charges according to received optical signals; a transistor structure which is connected with the photosensitive unit and is used for outputting an image signal according to the signal charge, wherein the transistor structure comprises a channel structure, a gate structure covering a predetermined area of the channel structure, a source electrode structure locatedat a first end of the channel structure and a drain electrode structure located at a second end of the channel structure, and the second end is an opposite end of the first end, and the channel structure comprises at least two channels arranged side by side.

The invention discloses a photoelectric detector based on PtSe2 and a silicon nanorod array and a preparation method of the photoelectric detector. The photoelectric detector comprises a PMMA light-transmitting protective layer, a transparent upper graphene electrode, a silicon nanopillar array structural body coated with few layers of PtSe2, and a metal electrode of the transparent upper graphene electrode and the silicon nanopillar array structural body. The preparation method comprises the following steps: preparing graphene by a CVD method; preparing a silicon nanopillar array structural body by dry etching; coating the surface of the silicon nanopillar array structure body with a few layers of PtSe2 by laser interference enhanced induction CVD; preparing the transparent upper graphene electrode; and plating the metal electrode through magnetron sputtering. The photoelectric detector prepared by the invention can realize detection in a range of visible light to near-infrared bands; and the silicon nanopillar array structure enhances the light absorption effect of the detector, so the detector has the advantages of high sensitivity, simple device structure and high practicability. Meanwhile, the preparation method can improve the performance of the detector, and has a relatively high popularization value.

The invention provides a method for manufacturing an image sensor, comprising the steps of: providing a semiconductor substrate, which sequentially includes a top semiconductor layer, an insulating layer, and a supporting substrate from top to bottom; fabricating a photosensitive diode and a signal readout circuit on the top semiconductor substrate; on the layer; connecting the two through metal interconnection; wherein, the fabrication of the photodiode includes the steps of: selecting the fabrication region; forming the first and second doped regions respectively, the second doped region surrounds the first doped region, and There is a fully depleted region between them; the fully depleted region is doped; and the semiconductor substrate is annealed at high temperature. Correspondingly, the present invention also provides an image sensor. The present invention adopts a lateral photosensitive diode, and manufactures a three-layer surrounding structure of the first conductivity type doped region / full depletion region / second conductivity type doped region on the top semiconductor layer of the semiconductor substrate, which overcomes the conventional semiconductor Under the process, the photogenerated current is too small and the sensor sensitivity is too low.

The invention discloses a pixel array with an enlarged photosensitive area and belongs to the field of integrated circuits. Each unit color restoration module of the pixel array comprises four sub pixels, an optical channel of each sub pixel is divided into a plurality of levels from top to bottom, different photosensitive elements and corresponding spectral elements are selectively arranged along the optical channel of different levels for processing spectrally incident light in the optical channel so as to be sensed by the corresponding photosensitive elements, and the photosensitive elements can be embedded on four random side walls and bottom of the optical channel. Compared with the prior art, photosensitive units are selectively and longitudinally arranged in the optical channel, and meanwhile, a filtering mirror in the prior art is omitted, corresponding spectral units are arranged for the photosensitive units arranged in the optical channel so as to guide or reflect photons matched with the photosensitive units to the photosensitive units, and accordingly electron devices in use are prevented from reducing, and possibility of Cross Talk is prevented from increasing.

The invention discloses a wide view angle receiving system based on an APD array to achieve the above purpose. The wide view angle receiving system comprises a group of APD arrays, and each APD arraycomprises a central APD array element and a plurality of auxiliary APD array elements surrounding the central APD array element. Aiming at the problems of small receiver field angle, low mobility andthe like, the invention provides the APD array structure design and the signal receiving combination mode design, so that the communication quality is further enhanced while the receiver field angle is improved. According to the utility model, a 3 * 3 APD array is adopted as a receiver for visible light communication, so that the overall photosensitive area of the receiver is equivalently increased, and the photosensitive area of the receiver is equivalently improved through the array structure.

The invention discloses an infrared detector, and the infrared detector comprises a substrate and an infrared micro-bridge deck; the micro-bridge deck is suspended on the substrate through a support and an electric connecting column, and the support and the electric connecting column are arranged below the micro-bridge deck, so the micro-bridge deck forms a suspended structure taking the support and the electric connecting column as centers; the micro-bridge deck comprises a lower electrode layer, a sensitive layer and an upper electrode layer which are sequentially connected from bottom to top, and the lower electrode layer, the sensitive layer and the upper electrode layer further extend into the supports and the electric connecting columns to form structural components of the micro-bridge deck. The lower electrode layer and the upper electrode layer are isolated from each other, are led out downwards along the support and the electric connecting columns, and are respectively connected with a processing circuit arranged in the substrate. According to the invention, the resistance value of the sensitive resistor can be reduced, the uniformity and consistency of pixels can be improved, and the photosensitive area and the fill factor can be effectively improved, so that the sensitivity and uniformity can be obviously improved. The invention further discloses a manufacturing method of the infrared detector.