Method for preparing thin-film transistor array substrate and liquid crystal display panel

Abstract

The invention discloses a method for manufacturing thin film transistor array substrate and liquid crystal display panel, the method for manufacturing thin film transistor array substrate integrates the manufacturing of an optical sensor, a photosensitive dielectric layer is formed between a transparent conductive layer and a metal electrode to sense the external light. As the optical sensor uses the transparent conductive layer as an electrode, the external light can directly irradiate the photosensitive dielectric layer through the transparent conductive layer, dramatically increasing the sensitization area of the optical sensor and promoting the light sensing performance. In addition, another side of the photosensitive dielectric layer is metal electrode, therefore efficiently preventing the backlight from directly irradiating the photosensitive dielectric layer and avoiding the noise.

Description

technical field [0001] The present invention relates to a manufacturing method of a thin film transistor array substrate, and in particular to a manufacturing method of a thin film transistor array substrate integrated with a light sensor. Background technique [0002] With the popularity of liquid crystal and plasma displays, flat panel displays have become so-called "Multimedia Boards" in addition to viewing images. The ambient light (Ambient Light) sensing function integrated in the flat panel display is a new proposal of current display technology, which mainly builds a light sensor in the flat panel display to detect the intensity of ambient light. [0003] The current common ambient light sensing technology is to form p-i-n (positively doped / undoped / negatively doped) photosensors on the glass substrate of the display panel by Low Temperature Poly-Silicon (LTPS) process. However, due to process limitations, the p-i-n photosensor manufactured by LTPS technology will suf...

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Problems solved by technology

However, due to process limitations, the p-i-n photosensor manufactured by LTPS technology will cause poor quantum effect (Quantum Effect, that is, photoelectric conversion efficiency) due to insufficient polysilicon film thickness.

In addition, the light emitted by the backlight will directly irradiate the p-i-n light sensor through the glass substrate, which will affect the light-sensing characteristics of the p-i-n light sensor, reducing the signal-to-noise ratio (SNR) of the light-sensing signal, resulting in distortion of the measurement results

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