41results about How to "Reduce read noise" patented technology

The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a spin Hall effect layer disposed on the free magnetic layer. Electrical bias is applied to the top shield, or lead layer, longitudinally so that the current is longitudinally driven through the spin Hall effect layer. The spin Hall effect layer may comprise Pt, Ta, W, copper doped with either bismuth or iridium, a noble metal having group 5d non-magnetic impurities, or combinations thereof. The spin Hall effect layer, together with the longitudinally applied bias, reduces the damping in the free magnetic layer and hence, reduces the thermal magnetic noise of the read head.

In an image sensor, the current through the in-pixel readout transistor is sensed by a circuit that is external to the pixel, and according to the measured current value a feedback current is supplied to charge the read-line parasitic capacitance. The feedback current is supplied by a circuit that also is external to the pixel area. The amplifier structure is reconfigurable so that it can be used both to read out and to reset the pixel.

A photodiode. A second conductive type heavily doped region is located in a first conductive type doped substrate, and a dopant concentration of the second conductive type heavily doped region is larger than that of the first conductive type doped substrate. A dummy isolation is at a periphery of the second conductive type heavily doped region. A first conductive type heavily doped region is located at a periphery of the dummy isolation layer in the first conductive type doped substrate. A dopant concentration of the first conductive type heavily doped region is larger than that of the first conductive type substrate. An isolation layer is located at a periphery of the first conductive type doped region with a width much larger than that of the dummy isolation layer.

Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.

The present invention discloses a stacked-type global exposure pixel unit structure and a method for forming the same. The method comprises of forming a lower electrode plate and a top electrode plate of a capacitor by using the top metal in the top dielectric layer and the adhesive layer of the stacked first chip and the second chip to replace the MOS capacitor originally located in the first chip silicon substrate wherein the capacitor dielectric layer can also be made with a high dielectric constant so that the effective area of the capacitor can be greatly increased, that the storage capacitance value of the global exposure pixel unit is increased, and that the readout noise is reduced effectively. Meanwhile, through the use of the opaque top metal material to make the lower electrode plate for the capacitor as a light shielding structure, it is possible to prevent the incidence light rays that penetrate the silicon substrate and the back dielectric layer from affecting the capacitance storage signal. In addition, since it is no longer necessary to form an MOS capacitor structure in the silicon substrate of the first chip, the photosensitive area of the photodiode can be increased to the position occupied by the original MOS capacitor so as to improve the sensitivity of the pixel unit.

The invention discloses a low-noise high-sensitivity global pixel unit structure and a formation method thereof. Through forming a vertical capacitor structure in stacked first-chip and second-chip rear-channel dielectric layers, an original MOS capacitor which is located in a first chip silicon substrate is replaced so that an effective area of the capacitor can be greatly increased, a storage capacitance value of a global exposure pixel unit is increased too and a reading-out noise is effectively reduced. Simultaneously, a lightproof capacitor lower pole plate extraction is arranged above upper and lower pole plates of the capacitor and is used as a shading structure so that incident light passing through a silicon substrate and the rear-channel dielectric layers can be prevented from impacting on a capacitor storage signal. Besides, because a MOS capacitor structure does not need to be formed in the first chip silicon substrate, a photosensitive area of a photodiode can be increased to a position occupied by the MOS capacitor originally so that sensitivity of the pixel unit is increased.

The invention relates to a low-power-consumption and low-noise X-ray CCD reading system based on a discrete time incremental model sigma delta ADC. The X-ray CCD reading system is composed of a front-end reading circuit, a digital control unit and the discrete time incremental model sigma delta ADC, the front-end reading circuit provides gains and adjusts input signals to the dynamic range of the ADC, the discrete time incremental model sigma delta ADC carries out analog-digital conversion on the signals, and the digital control unit can adjust the gains of a front-end amplifier, change the height of the front-end output floating level and adjust a time window of an ADC sample in a forward and backward mode. The discrete time incremental model sigma delta ADC is provided with two passages, each passage is composed of a pre-modulator, an incremental model sigma delta modulator and a downsampling filter, and quantization of CCD signals is realized through a special comb-shaped filter of a truncation coefficient. When the X-ray CCD reading system works under power voltage 3.3 V and the reading speed is 100 kHz, the accuracy can reach 10-11 bits, the equivalent reading noise is smaller than 10 electrons, and the requirements of actual science research and application can be met.

The invention relates to an electron multiplying charge-coupled device and especially relates to an electron multiplying charge-coupled device multiplier register stray signal interference preventingstructure. An electron multiplying charge-coupled device is a traditional frame transfer structure, and comprises a photosensitive area, a storage area, a horizontal register, a multiplier register and an output amplifier, wherein the photosensitive area is connected with the storage area; the storage area is provided with the horizontal register; one end of the horizontal register is connected with one end of the multiplier register; the other end of the multiplier register is connected with the output amplifier; and the horizontal register, the multiplier register and the output amplifier are respectively and peripherally provided with a layer of N-type doped stray signal collection area. The structure can effectively collect and dispose stray electrons in the field area and noise electrons coupled with other non-ideal factors, thereby helping to reduce readout noise of the charge-coupled device, especially the electron multiplying charge-coupled device.

A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

The invention discloses a global shutter image sensor pixel structure and a signal sampling and reading method thereof. The pixel structure comprises a photosensitive unit, a storage unit and an output unit, wherein the photosensitive unit is connected with the storage unit, the storage unit is connected with the output unit, the storage unit comprises a first amplifier, the first amplifier is connected with the photosensitive unit, the output unit comprises a second amplifier, and the second amplifier is connected with the storage unit; the photosensitive unit is used for generating a reset signal and collecting an image signal; the storage unit is used for amplifying, sampling and storing the reset signal and the image signal generated by global exposure; the output unit is used for amplifying and outputting the reset signal and the image signal so as to obtain effective image information for realizing correlated double sampling. The global shutter pixel circuit structure improves the problem that the signal output amplitude is halved in the existing global exposure image sensor technology.

The invention relates to a device and method that controls the generation of computer system noise, the computer system includes a multimedia playing system, a first operating system and a second operating system which costs low system resource, said method includes: receiving a remote activation signal to activate a central process unit of the computer system; executing the second operating system and the multimedia playing system; reading the control managing data which is corresponding with the multimedia playing system executing item; adjusting the work frequency of the central process unit; receiving a remote adjusting signal; and adjusting the rotary speed of a thermal fan of the computer system. So the rotary speed read by memory unit can be decreased to decrease the noise.

The invention concerns the framework and its method to control noise from computer system.. When computer system with first OS and second OS of less resource consumption plays multimedia, it will execute second OS firstly; later, when execute multimedia display system to display multimedia record, first read part multimedia display system and multimedia record stored in storage unit, store temporarily to virtual disk unit, then read them and store to RAM, and display; during executing multimedia display system to display multimedia record, computer system will read continually multimedia display system and multimedia record and store to virtual disk unit to execute display; then it can decrease access speed of storage unit and access noise.