The invention relates to an
electron multiplying charge-coupled device and especially relates to an
electron multiplying charge-coupled device multiplier register stray
signal interference preventingstructure. An
electron multiplying charge-coupled device is a traditional frame transfer structure, and comprises a photosensitive area, a
storage area, a horizontal register, a multiplier register and an output
amplifier, wherein the photosensitive area is connected with the
storage area; the
storage area is provided with the horizontal register; one end of the horizontal register is connected with one end of the multiplier register; the other end of the multiplier register is connected with the output
amplifier; and the horizontal register, the multiplier register and the output
amplifier are respectively and peripherally provided with a layer of N-type doped stray
signal collection area. The structure can effectively collect and dispose stray electrons in the field area and
noise electrons coupled with other non-ideal factors, thereby helping to reduce readout
noise of the charge-coupled device, especially the electron multiplying charge-coupled device.