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41results about How to "Reduce read noise" patented technology
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Micro CT scanners incorporating internal gain charge-coupled devices
ActiveUS7352840B1Improve rendering capabilitiesTake advantageTelevision system detailsRadiation/particle handlingCt scannersEngineering
The present invention provides internal gain charge coupled devices (CCD) and CT scanners that incorporate an internal gain CCD. A combined positron emission tomography and CT scanner is also provided.
Owner:RADIATION MONITORING DEVICES
Magnetic read head having spin hall effect layer
InactiveUS20150287426A1Reduce dampingReduces thermal magnetic noiseHeads using thin filmsRecord information storageMagnetic noiseSpin Hall effect
The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a spin Hall effect layer disposed on the free magnetic layer. Electrical bias is applied to the top shield, or lead layer, longitudinally so that the current is longitudinally driven through the spin Hall effect layer. The spin Hall effect layer may comprise Pt, Ta, W, copper doped with either bismuth or iridium, a noble metal having group 5d non-magnetic impurities, or combinations thereof. The spin Hall effect layer, together with the longitudinally applied bias, reduces the damping in the free magnetic layer and hence, reduces the thermal magnetic noise of the read head.
Owner:WESTERN DIGITAL TECH INC
CMOS image sensor readout employing in-pixel transistor current sensing
ActiveUS7847846B1Reduce read noiseIncrease frame rateTelevision system detailsTelevision system scanning detailsCMOSParasitic capacitance
In an image sensor, the current through the in-pixel readout transistor is sensed by a circuit that is external to the pixel, and according to the measured current value a feedback current is supplied to charge the read-line parasitic capacitance. The feedback current is supplied by a circuit that also is external to the pixel area. The amplifier structure is reconfigurable so that it can be used both to read out and to reset the pixel.
Owner:UNIVERSITY OF ROCHESTER
Photodiode
InactiveUS6351002B1Reduce read noiseHigh quality and reliabilitySolid-state devicesSemiconductor/solid-state device manufacturingIsolation layerPhotodiode
A photodiode. A second conductive type heavily doped region is located in a first conductive type doped substrate, and a dopant concentration of the second conductive type heavily doped region is larger than that of the first conductive type doped substrate. A dummy isolation is at a periphery of the second conductive type heavily doped region. A first conductive type heavily doped region is located at a periphery of the dummy isolation layer in the first conductive type doped substrate. A dopant concentration of the first conductive type heavily doped region is larger than that of the first conductive type substrate. An isolation layer is located at a periphery of the first conductive type doped region with a width much larger than that of the dummy isolation layer.
Owner:UNITED MICROELECTRONICS CORP
Non-destructive read operations with dynamically growing images
ActiveUS20150172526A1Reduce read noiseTelevision system detailsChemiluminescene/bioluminescenceNon destructiveGraphics
Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.
Owner:BIO RAD LAB INC
Stacked-type global exposure pixel unit structure and method for forming the same
ActiveCN107240593AIncrease the effective areaIncrease the storage capacitor valueSolid-state devicesRadiation controlled devicesCapacitanceMetallic materials
The present invention discloses a stacked-type global exposure pixel unit structure and a method for forming the same. The method comprises of forming a lower electrode plate and a top electrode plate of a capacitor by using the top metal in the top dielectric layer and the adhesive layer of the stacked first chip and the second chip to replace the MOS capacitor originally located in the first chip silicon substrate wherein the capacitor dielectric layer can also be made with a high dielectric constant so that the effective area of the capacitor can be greatly increased, that the storage capacitance value of the global exposure pixel unit is increased, and that the readout noise is reduced effectively. Meanwhile, through the use of the opaque top metal material to make the lower electrode plate for the capacitor as a light shielding structure, it is possible to prevent the incidence light rays that penetrate the silicon substrate and the back dielectric layer from affecting the capacitance storage signal. In addition, since it is no longer necessary to form an MOS capacitor structure in the silicon substrate of the first chip, the photosensitive area of the photodiode can be increased to the position occupied by the original MOS capacitor so as to improve the sensitivity of the pixel unit.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
Scanning sampling and image processing method of fast imaging
InactiveCN103179331AHigh resolutionImprove signal-to-noise ratioTelevision system detailsColor television detailsRapid imagingImaging processing
The invention discloses a scanning sampling and image processing method of fast imaging. A sCMOS (Complementary Metal-Oxide-Semiconductor) camera is adopted as an imaging tool, and is worked in a subarray (or ROI) mode, the method comprises the following steps: enabling an imaging object to continuously translate vertical to a sampling direction of the sCMOS camera with a set speed by using a moving plateform, performing scanning imaging on the object by using the sCMOS camera, and outputting sampling frames, shifting and overlying the obtained images to obtain an image. By adopting of the high-speed sampling feature of the sCMOS camera under the subarray (or ROI) mode, and shifting and overlying the sampling frames of the sCMOS camera, the generated image is high in resolution, high in signal to noise ratio and low in distortion, and the method is especially suitable for the fast imaging of the large-size object.
Owner:HUAZHONG UNIV OF SCI & TECH
Variably responsive photosensor
ActiveUS7554170B2Reduce read noiseEnhanced signalTransistorTelevision system detailsVoltage referencePhotoelectric sensor
Owner:STMICROELECTRONICS (RES & DEV) LTD
Micro CT scanners incorporating internal gain charge-coupled devices
ActiveUS7486766B1Improve rendering capabilitiesTake advantageTelevision system detailsMaterial analysis using wave/particle radiationCt scannersEngineering
The present invention provides internal gain charge coupled devices (CCD) and CT scanners that incorporate an internal gain CCD. A combined positron emission tomography and CT scanner is also provided.
Owner:RADIATION MONITORING DEVICES
Backside illuminated global exposure pixel unit structure and manufacturing method
ActiveCN106098714AIncrease the storage capacitor valueReduce read noiseSolid-state devicesDiodeCapacitanceDielectric structure
The invention relates to a backside illuminated global exposure pixel unit structure and a manufacturing method. The pixel unit structure comprises a substrate at the upper part and a dielectric structure located at the lower part, wherein a plurality of photodiodes are formed in the substrate; a pass transistor grid polycrystalline layer, a light blocking block layer and a storage capacitor are sequentially formed in the dielectric structure from top to bottom; and the light blocking block layer is used for blocking light which penetrates through the photodiodes. Therefore, the influence of incident light on a charge signal in the signal storage capacitor can be avoided; the capacitance of the storage capacitor is increased; readout noise is reduced; the area of the photodiodes for photoreception in the pixel unit can also be increased; the sensitivity of the global exposure pixel unit is improved; and a high-quality image can be finally obtained by an image sensor.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
Image sensor based on time delay integration (TDI) and imaging method thereof
ActiveCN112019777AThe number of transfers has little effectReduce restrictionsTelevision system detailsColor television detailsControl signalEngineering
The present invention discloses an image sensor based on time delay integration (TDI) and an imaging method thereof. The image sensor based on time delay integration TDI comprises a multi-stage lineararray which comprises a plurality of single-stage linear arrays arranged in the scanning direction of the image sensor, and each single-stage linear array comprises a plurality of pixels arranged inthe linear array direction; each stage of single-stage linear array enters a counting mode in response to a first control signal to enter a transfer mode in response to the second control signal, wherein in the counting mode, each stage of single-stage linear array counts the optical signals incident on the pixels and obtains a count value; and in the transfer mode, each stage of single-stage linear array stops counting, except the last stage of single-stage linear array, the other stages of single-stage linear arrays output the obtained current counting value to the next stage of single-stagelinear array, and the last stage of single-stage linear array outputs the obtained current counting value.
Owner:NANJING UNIV
Signal processing system of variable spectrum band multispectral camera based on area array CCD
ActiveCN106851085AFine Spectrum InformationRealize on-orbit precise adjustmentTelevision system detailsColor television detailsSequence signalVideo processing
The invention discloses a signal processing system of a variable spectrum band multispectral camera based on an area array CCD. The signal processing system comprises a variable spectrum band timing sequence controller, a drive circuit, a frame transfer area array CCD with a charge pouring function, an analog-to-digital conversion circuit and a video processor. The variable spectrum band timing sequence controller generates a timing sequence signal used for driving the area array CCD to work according to a specified spectrum band; the drive circuit converts the timing sequence signal into a drive signal of a corresponding amplitude; the frame transfer area array CCD with the charge pouring function outputs spectrum band information under the action of the drive signal; the analog-to-digital conversion circuit converts an analog signal output by the CCD into a digital signal; and the video processor receives a digital image signal and processes image information according to input parameter requirements. Compared with the signal processing system of a traditional multi- linear-array multispectral camera, the signal processing system disclosed by the invention has the advantages of a large spectrum band number, real-time adjustable spectral range of the spectrum bands, and high spectrum band width adjustment precision, etc.
Owner:BEIJING RES INST OF SPATIAL MECHANICAL & ELECTRICAL TECH
High dynamic focal plane readout circuit and sampling method thereof
ActiveCN106331542AIncrease full well capacityImprove conversion gainTelevision system detailsColor television detailsCapacitanceAudio power amplifier
The invention relates to a high dynamic focal plane readout circuit and a sampling method thereof. The circuit comprises a capacitor transconductance amplifier, a sampling circuit and a source follower, wherein the capacitor transconductance amplifier comprises an amplifier, an amplifier reset switch and a first integrating capacitor which are arranged between a signal voltage input end and a signal voltage output end of the amplifier in parallel in a bridge connection manner, and a low-gain enable switch and a second integrating capacitor; and the low-gain enable switch and the second integrating capacitor are arranged between the signal voltage input end and the signal voltage output end of the amplifier in series. According to the high dynamic focal plane readout circuit provided by the invention, the first integrating capacitor and the second integrating capacitor constitute a low-gain integrating capacitor together, large full-well capacity can be realized, and serving as a high-gain integrating capacitor, the first integrating capacitor can provide small readout noise and a high conversion gain. Therefore, the high dynamic range focal plane readout circuit provided by the invention can meet the large full-well capacity and a small noise electron number at the same time and achieve a relatively high dynamic range.
Owner:GPIXEL
Low-noise high-sensitivity global pixel unit structure and formation method thereof
ActiveCN107195648AIncrease the effective areaIncrease the storage capacitor valueTelevision system detailsSolid-state devicesCapacitanceLow noise
The invention discloses a low-noise high-sensitivity global pixel unit structure and a formation method thereof. Through forming a vertical capacitor structure in stacked first-chip and second-chip rear-channel dielectric layers, an original MOS capacitor which is located in a first chip silicon substrate is replaced so that an effective area of the capacitor can be greatly increased, a storage capacitance value of a global exposure pixel unit is increased too and a reading-out noise is effectively reduced. Simultaneously, a lightproof capacitor lower pole plate extraction is arranged above upper and lower pole plates of the capacitor and is used as a shading structure so that incident light passing through a silicon substrate and the rear-channel dielectric layers can be prevented from impacting on a capacitor storage signal. Besides, because a MOS capacitor structure does not need to be formed in the first chip silicon substrate, a photosensitive area of a photodiode can be increased to a position occupied by the MOS capacitor originally so that sensitivity of the pixel unit is increased.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
High-resolution video satellite imaging system
InactiveCN107277384AHigh resolutionImprove reliabilityTelevision system detailsColor television detailsFocal ImageCompression set
The invention discloses a high-resolution video satellite imaging system, and relates to a video satellite imaging system, for solving the technical problems about feasibility and reliability of spaceflight application of video imaging with a high spatial resolution and a large breadth. The system comprises a video imaging unit and a video control unit, wherein the video imaging unit comprises an optical system, an area array CMOS image sensor, an FPGA, a storage and an imaging power supply module; the imaging power supply module powers the area array MCOS image sensor, the FPGA and the storage; the video control unit comprises an imaging controller, a video compression set, a focusing module and a power supply control module, and the power supply control module powers the imaging controller, the video compression set and the focusing module. According to the system provided by the invention, the exposure time interval of the whole frame is shortened in an overall shutter working mode, the requirement on posture stability during a satellite swinging process is reduced, the use of a focal image shift compensation mechanism is cancelled, the volume is reduced, the weight is decreased, and no moving components exist, so that reliability of the spaceflight application is improved.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
X-ray CCD reading system based on discrete time incremental model sigma delta ADC
InactiveCN104168022AImprove linearityReduce read noiseAnalogue-digital convertersRadiation intensity measurementVIT signalsVoltage
The invention relates to a low-power-consumption and low-noise X-ray CCD reading system based on a discrete time incremental model sigma delta ADC. The X-ray CCD reading system is composed of a front-end reading circuit, a digital control unit and the discrete time incremental model sigma delta ADC, the front-end reading circuit provides gains and adjusts input signals to the dynamic range of the ADC, the discrete time incremental model sigma delta ADC carries out analog-digital conversion on the signals, and the digital control unit can adjust the gains of a front-end amplifier, change the height of the front-end output floating level and adjust a time window of an ADC sample in a forward and backward mode. The discrete time incremental model sigma delta ADC is provided with two passages, each passage is composed of a pre-modulator, an incremental model sigma delta modulator and a downsampling filter, and quantization of CCD signals is realized through a special comb-shaped filter of a truncation coefficient. When the X-ray CCD reading system works under power voltage 3.3 V and the reading speed is 100 kHz, the accuracy can reach 10-11 bits, the equivalent reading noise is smaller than 10 electrons, and the requirements of actual science research and application can be met.
Owner:FUDAN UNIV
Electron multiplying charge-coupled device multiplier register stray signal interference preventing structure
ActiveCN110335881AReduce read noiseSolid-state devicesRadiation controlled devicesAudio power amplifierProcessor register
The invention relates to an electron multiplying charge-coupled device and especially relates to an electron multiplying charge-coupled device multiplier register stray signal interference preventingstructure. An electron multiplying charge-coupled device is a traditional frame transfer structure, and comprises a photosensitive area, a storage area, a horizontal register, a multiplier register and an output amplifier, wherein the photosensitive area is connected with the storage area; the storage area is provided with the horizontal register; one end of the horizontal register is connected with one end of the multiplier register; the other end of the multiplier register is connected with the output amplifier; and the horizontal register, the multiplier register and the output amplifier are respectively and peripherally provided with a layer of N-type doped stray signal collection area. The structure can effectively collect and dispose stray electrons in the field area and noise electrons coupled with other non-ideal factors, thereby helping to reduce readout noise of the charge-coupled device, especially the electron multiplying charge-coupled device.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
Variably responsive photosensor
ActiveUS20070284507A1Reduce read noiseEnhanced signalTransistorTelevision system detailsVoltage referenceEngineering
A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.
Owner:STMICROELECTRONICS RES & DEV
Non-destructive read operations with dynamically growing images
ActiveUS20170332001A1Reduce read noiseTelevision system detailsChemiluminescene/bioluminescenceGraphicsNon destructive
Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.
Owner:BIO RAD LAB INC
Non-destructive read operations with dynamically growing images
ActiveUS9736388B2Reduce read noiseTelevision system detailsColor television with pulse code modulationGraphicsNon destructive
Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.
Owner:BIO RAD LAB INC
Global shutter image sensor pixel structure and signal sampling and reading method thereof
ActiveCN111416953AReduce read noiseTelevision system detailsColor television detailsComputer hardwareShutter
The invention discloses a global shutter image sensor pixel structure and a signal sampling and reading method thereof. The pixel structure comprises a photosensitive unit, a storage unit and an output unit, wherein the photosensitive unit is connected with the storage unit, the storage unit is connected with the output unit, the storage unit comprises a first amplifier, the first amplifier is connected with the photosensitive unit, the output unit comprises a second amplifier, and the second amplifier is connected with the storage unit; the photosensitive unit is used for generating a reset signal and collecting an image signal; the storage unit is used for amplifying, sampling and storing the reset signal and the image signal generated by global exposure; the output unit is used for amplifying and outputting the reset signal and the image signal so as to obtain effective image information for realizing correlated double sampling. The global shutter pixel circuit structure improves the problem that the signal output amplitude is halved in the existing global exposure image sensor technology.
Owner:SHENZHEN RGBIC MICROELECTRONICS TECH CO LTD
Large dynamic range semi-floating gate image sensor
ActiveCN111601056BLarge dynamic rangeImprove conversion gainTelevision system detailsColor television detailsHemt circuitsEngineering
The invention discloses a large dynamic range semi-floating gate image sensor, comprising a pixel array, a current processing column level circuit and a voltage processing column level circuit, the pixel array includes a plurality of pixels, each of the pixels includes a semi-floating gate A transistor and a first voltage conversion circuit, the first voltage conversion circuit is used to convert the current signal output by the semi-floating gate transistor into a voltage signal, and sample and output the reset voltage and the signal voltage respectively, so as to realize pixel-level correlated double sampling, reduce read noise. In the present invention, a voltage column-level processing circuit is added to the semi-floating gate image sensor, and a voltage conversion circuit is added to each pixel, so that the image sensor can take into account the large full well charge capacity and high conversion gain, and can be used in high background and low background. It can be imaged at any time, which greatly expands the application range of the semi-floating gate image sensor; in addition, binning between pixels can also be realized, which further expands the dynamic range of the image sensor.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
Device and method for controlling noise production of computer system
InactiveCN1991764AReduce noiseReduce speedError detection/correctionMultiprogramming arrangementsOperational systemComputerized system
The invention relates to a device and method that controls the generation of computer system noise, the computer system includes a multimedia playing system, a first operating system and a second operating system which costs low system resource, said method includes: receiving a remote activation signal to activate a central process unit of the computer system; executing the second operating system and the multimedia playing system; reading the control managing data which is corresponding with the multimedia playing system executing item; adjusting the work frequency of the central process unit; receiving a remote adjusting signal; and adjusting the rotary speed of a thermal fan of the computer system. So the rotary speed read by memory unit can be decreased to decrease the noise.
Owner:COREL CORP
Pixel structure of a high light sensitivity CMOS image sensor
ActiveCN103561218BHigh sensitivityImprove signal-to-noise ratioTelevision system detailsColor television detailsCMOSOne pass
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Splicing structure based on three sCMOS detectors
ActiveCN109108594ASolve the disadvantages of insufficient widthWide spectral response rangeMetal working apparatusSpectral responseImage detection
The invention discloses a splicing structure based on three sCMOS detectors. The three sCMOS detectors are staggered and spliced according to a delta-shaped structure; a first detector above the deltashape is used as a reference, and specifically the row pixel of the first detector is used as a Y-direction reference, and the column pixel is an X-direction reference so as to adjust the position ofthe first detector; the first detector is used as the reference, and the positions of a second detector in the x direction and the y direction at the lower left part of the delta shape are adjusted according to the splicing requirements; the first detector and the second detector are used as references, and according to the splicing requirement, the positions of a third detector in the x direction and the y direction at the right lower part of the delta shape are adjusted; and the three adjusted detectors are fixed to complete the splicing of the three sCMOS detectors. By the splicing structure, the defect that the width of the aspect of image detection is insufficient can be overcome, the field of view is greatly expanded through splicing, and a wide spectral response range, a high spectral response and ultra-low readout noise are achieved.
Owner:ACAD OF OPTO ELECTRONICS CHINESE ACAD OF SCI
A global exposure pixel unit and its preparation method
ActiveCN110707113BHigh sensitivityIncrease capacitanceSolid-state devicesRadiation controlled devicesCapacitancePhotodiode
A global exposure pixel unit disclosed by the present invention includes a substrate and a dielectric layer region arranged in a vertical direction, the substrate includes a photodiode, transistors and injection regions respectively located on both sides of the photodiode; the dielectric layer region includes the first A dielectric layer, a second dielectric layer up to the Mth dielectric layer, and adjacent dielectric layers are separated by an etching barrier layer; the first dielectric layer, the second dielectric layer up to the Mth dielectric layer respectively contain a first metal layer , the second metal layer to the Mth metal layer; the trench metal located in the odd-numbered layer is connected to the source and drain of the transistor through the corresponding contact metal to form the upper plate of the storage capacitor, and the trench metal located in the even-numbered layer is connected to the source and drain of the transistor through the corresponding contact metal The injection region is connected to the lower electrode plate forming the storage capacitor to form the storage capacitor of the pixel unit. The global exposure pixel unit provided by the present invention increases the capacitance value of the storage capacitor, reduces the readout noise of the pixel unit, and improves the sensitivity of the pixel unit.
Owner:CHENGDU LIGHT COLLECTOR TECH
Apparatus and method for controlling noise generated from computer system
InactiveCN100334545CReduce noiseReduce speedProgram loading/initiatingOperational systemResource consumption
The invention concerns the framework and its method to control noise from computer system.. When computer system with first OS and second OS of less resource consumption plays multimedia, it will execute second OS firstly; later, when execute multimedia display system to display multimedia record, first read part multimedia display system and multimedia record stored in storage unit, store temporarily to virtual disk unit, then read them and store to RAM, and display; during executing multimedia display system to display multimedia record, computer system will read continually multimedia display system and multimedia record and store to virtual disk unit to execute display; then it can decrease access speed of storage unit and access noise.
Owner:COREL CORP
Global exposure pixel unit, capacitor structure and preparation method
ActiveCN105552097BReduce areaArea does not affectSolid-state devicesRadiation controlled devicesCapacitanceEngineering
The invention provides a global exposure pixel unit, a capacitor structure and a preparation method. Through forming a first capacitor structure, a second capacitor structure and a third capacitor structure at a longitudinal direction, and connecting the three capacitor structures together in a parallel connection manner, on the basis of not increasing the area of the capacitor structure of the global exposure pixel unit, the storage capacitance value of the capacitor structure is increased, and the readout noise is reduced; and meanwhile, the area of a photodiode photosensitive area of the whole global exposure pixel unit is not affected, and the performance of a device is improved.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
Back-illuminated global pixel unit structure and preparation method thereof
ActiveCN105762160BIncrease capacitanceAvoid distortionSolid-state devicesRadiation controlled devicesCapacitanceEngineering
The invention provides a backside illumination global pixel unit structure and a preparation method thereof. The preparation method includes the following steps: conducting reflection of incident light by using a light-blocking isolation groove and an additional capacitance top crown, preventing the incident light from entering a charge signal memory block of a capacitor structure, and forming an additional capacitor structure on a back surface of a silicon lining in correspondence to the capacitor structure, the additional capacitor structure being in parallel to the capacitor structure. The backside illumination global pixel unit structure does not take too much an area of a pixel unit, does not influence a photosensitive area of a photodiode in the pixel unit, does not low agility of a device, can increase memory capacitance of the global pixel unit, lowers readout noise of the global pixel unit and increases entire performance of the global pixel unit.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
A Signal Processing System of a Variable Spectrum Multispectral Camera Based on Area Array CCD
ActiveCN106851085BFine Spectrum InformationRealize on-orbit precise adjustmentTelevision system detailsColor television detailsSequence signalDigital signal
Owner:BEIJING RES INST OF SPATIAL MECHANICAL & ELECTRICAL TECH
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