Pixel structure of a high light sensitivity CMOS image sensor
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
- Publication Date
- 2019-07-19
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Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor integrated circuits, in particular to a pixel structure of a CMOS image sensor with high light sensitivity. Background technique
[0002] CMOS image sensors, due to their continuously improving optical and electrical properties, have been widely used in mobile phones, digital cameras, electron microscopes, etc., consumer electronics and scientific applications. Especially in the case of poor lighting conditions, the need to still achieve high-definition image capture is becoming a trend in these applications. Therefore, there are more urgent requirements for high-performance image sensors, especially to achieve high light sensitivity and signal-to-noise ratio of image sensors under low light.
[0003] In the current CMOS image sensor technology, the signal-to-noise ratio of the image is improved by reducing the readout noise of the readout circuit, or by increasing the photosensitive area filling rat...