A global exposure pixel unit and its preparation method
A pixel unit and global exposure technology, which is applied in the field of image sensors, can solve problems such as the inability to effectively reduce the readout noise of the pixel unit, affect the sensitivity of the pixel unit, and distort the stored signal, so as to reduce the readout noise, increase the capacitance value, and increase the area effect
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[0041] In order to make the purpose, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0042] A method for preparing a global exposure pixel unit provided by the present invention comprises the following steps:
[0043] S01: If figure 2As shown, a substrate 1 is prepared, and a photodiode 2, a transistor 31 and an injection region 32 respectively located on both sides of the photodiode are formed in the substrate 1; a first dielectric layer 51 is deposited on the surface of the substrate 1, and the first dielectric layer A first metal layer 61 is formed in the layer, and the upper surface of the first metal layer 61 is flush with the upper surface of the first dielectric layer 51 ; the first metal layer 61 is interconnected with the transistor 31 and the injection region 32 through the contact hole 4 .
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