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Electron multiplying charge-coupled device multiplier register stray signal interference preventing structure

A technology of charge-coupled devices and electron multiplication, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of signal-to-noise ratio reduction, noise increase, sensitivity reduction, etc., and achieve the effect of reducing readout noise

Active Publication Date: 2019-10-15
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
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Problems solved by technology

The spurious signal is amplified in the multiplication register, resulting in increased noise, reduced signal-to-noise ratio, and reduced sensitivity at the output

Method used

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  • Electron multiplying charge-coupled device multiplier register stray signal interference preventing structure
  • Electron multiplying charge-coupled device multiplier register stray signal interference preventing structure

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Embodiment Construction

[0012] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0013] The present invention proposes an EMCCD multiplying register anti-spurious signal interference structure, such as figure 1 , EMCCD is a traditional frame transfer structure, including a photosensitive area, a storage area, a horizontal register, a multiplication register and an output amplifier, wherein the photosensitive area is connected to the storage area, the storage area is provided with a horizontal register, and the horizontal register is connect...

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Abstract

The invention relates to an electron multiplying charge-coupled device and especially relates to an electron multiplying charge-coupled device multiplier register stray signal interference preventingstructure. An electron multiplying charge-coupled device is a traditional frame transfer structure, and comprises a photosensitive area, a storage area, a horizontal register, a multiplier register and an output amplifier, wherein the photosensitive area is connected with the storage area; the storage area is provided with the horizontal register; one end of the horizontal register is connected with one end of the multiplier register; the other end of the multiplier register is connected with the output amplifier; and the horizontal register, the multiplier register and the output amplifier are respectively and peripherally provided with a layer of N-type doped stray signal collection area. The structure can effectively collect and dispose stray electrons in the field area and noise electrons coupled with other non-ideal factors, thereby helping to reduce readout noise of the charge-coupled device, especially the electron multiplying charge-coupled device.

Description

technical field [0001] The invention relates to an anti-spurious signal interference structure of an electron multiplying charge coupled device (Electron Multiplying Charged Coupled Device, EMCCD) multiplication register, in particular to an anti-spurious signal interference structure of an EMCCD multiplication register. Background technique [0002] EMCCD technology, also known as "on-chip gain" technology, uses the "impact ionization" effect of charges to multiply and amplify signal electrons. The difference from ordinary CCD is that a series of multiplying registers are added between the horizontal register and the sense amplifier. The detection sensitivity of the CCD device is improved. EMCCD has the characteristics of high detection sensitivity, high spatial resolution, wide response band range, high time resolution, flexible and convenient use, etc. It has a wide range of applications in low-light detection in aerospace, medicine, and industry. [0003] With the backg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/148
CPCH01L27/14806H01L27/1485
Inventor 王小东汪朝敏白雪平
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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