The invention relates to a read amplification circuit for a nonvolatile memory and a memory. The read circuit comprises a basic
physical unit composed of a plurality of storage units, a reference unit set and a read
amplifier, wherein the storage units are correspondingly connected to respective read bit lines; the basic
physical unit is gated via a first gate tube; the reference unit set has the same configuration as the basic
physical unit and is composed of a plurality of reference units; the reference units and the storage units are one-to-one correspondence; the reference units are correspondingly connected with respective reference
voltage lines, and respectively have the same structure as the corresponding storage units; the reference unit set is gated via a second gate tube; the second gate tube has the same structure as the first gate tube; the read
amplifier is connected with the read bit lines and the reference
voltage lines, and outputs corresponding read data according to the comparative result between the read bit lines and the voltages on the corresponding reference
voltage lines. The read amplification circuit can enhance the data read speed when reading the memory, and prolong the service life of the memory.