Sensitive amplifier for electric EPROM

A technology of sensitive amplifier and read-only memory, which is applied in the application field of embedded EEPROM, can solve the problems of sensitive amplifier discrimination reduction, complex control logic, slow speed, etc., achieve simple structure, reduce charging voltage, and improve readout speed effect
CN1949394AInactive Publication Date: 2007-04-18HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2007-04-18
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a sensitivity amplifier for EEPROM. It includes charge control circuit and detecting output circuit. The charge control circuit includes PMOS tube P1 and NMOS tubes N1, N2. Detecting output circuit includes PMOS tubes P2, P3 and NMOS tubes N3, N4, N5. The invention uses the bidirectional ducting ability of MOS tube to take charge to drain electrode. The source electrodes of floating grid tube are connected to each other to decrease charging circuit quantity. By modifying the reverse threshold value of the inverter, the charging voltage would be decreased, and read speed would be improved. The invention is especially suitable for embedded EEPROM.
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Description

technical field

[0001] The invention belongs to the technical field of non-volatile memory, in particular to a sense amplifier (sense amplifier) ​​used in Electrically Erasable Programmable Read-Only Memory (EEPROM), especially suitable for application in embedded EEPROM. Background technique

[0002] The entire EEPROM is composed of two parts: a memory cell and a peripheral circuit. The peripheral circuit consists of a column decoder, a row decoder, a sense amplifier, a high voltage generator, and a Gap (bandgap), logic control (control logic), data latch (data latch) and other circuits.

[0003] The power dissipation of EEPROM is mainly composed of four parts: static power dissipation, read power dissipation, write power dissipation and digital power consumption. The static power consumption mainly comes from the extra power consumption generated when the fluctuation voltage drives the decoding circuit and the large node parasitic capacitance in the levelshifter circuit; ...

Claims

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