Micro ultra-wideband photodetector based on graphene and production method thereof

The technology of a photodetector and its manufacturing method is applied in the field of photodetectors, which can solve the problems of restricting the application in the field of broadband detection and the limited detection spectrum range, so as to improve the light absorption rate and light utilization rate, increase the effective photosensitive area, and improve the absorption rate. rate effect

Active Publication Date: 2017-11-24
BEIJING JIAOTONG UNIV
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Problems solved by technology

However, due to the limitation of its detection principle, the enhancement of responsivity only occurs in the band that resonates with quantum dots or

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  • Micro ultra-wideband photodetector based on graphene and production method thereof
  • Micro ultra-wideband photodetector based on graphene and production method thereof

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[0043] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0044] The invention provides a graphene-based miniature ultra-broadband photodetector. The three-dimensional micropipe structure of the detector can greatly reduce the area occupied by the chip, and at the same time improve the light absorption rate and light utilization rate of single-layer graphene. ; The use of graphene / dielectric layer / graphene heterojunction and optical resonant cavity greatly improves the responsivity of graphene photodetectors; it makes possible the emergence of graphene-based miniature ultra-broadb...

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Abstract

The invention discloses a micro ultra-wideband photodetector based on graphene. The micro ultra-wideband photodetector comprises a monocrystalline silicon substrate; a stress layer formed on the monocrystalline silicon substrate; and a heterojunction formed on the stress layer, wherein the heterojunction comprises a gate electrode, a first graphene layer, a dielectric layer, a second graphene layer, a source electrode which is parallel to and equidistant from the gate electrode, and a drain electrode layer structure, which are orderly arranged; the stress layer makes the heterojunction to be self-assembled into a microtube three-dimensional structure; and a current measurement loop is formed on the above structure. The invention further discloses a production method of the micro ultra-wideband photodetector based on the graphene. The three-dimensional microtube structure can greatly reduce the occupied area of chips, improve the light absorption rate and light utilization efficiency of the monolayer graphene, and greatly improve the responsivity of graphene photodetectors.

Description

technical field [0001] The invention relates to the technical field of photodetectors. More specifically, it relates to a miniature ultra-broadband photodetector and a manufacturing method thereof. Background technique [0002] A photodetector is an optical power measurement device that converts optical signals into electrical signals. It can detect the optical power incident on its surface and convert the change of this optical power into a corresponding current. Among them, the ultra-broadband light detector realizes ultra-broadband light detection by integrating multiple detectors suitable for different wave bands, and can simultaneously detect electromagnetic wave radiation in different wave bands such as ultraviolet, visible light, infrared and even terahertz waves. Imaging, remote sensing, environmental monitoring, astronomical detection, spectral analysis and many other fields play a very important role. However, since most ultra-broadband photodetectors realize ult...

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Application Information

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IPC IPC(8): H01L31/112H01L31/18G01J1/42
CPCG01J1/42H01L31/1129H01L31/18Y02P70/50
Inventor 邓涛张兆浩
Owner BEIJING JIAOTONG UNIV
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