32 results about "Sharp interface" patented technology

The invention relates to an image retrieval method based on hierarchical clustering, proposes a system schema based on hierarchical clustering network image retrieval on the basis of the traditional image search engine through keyword semantic analysis and image visual clustering, and mainly includes that: (1) the image retrieval results are clustered in semantic level; (2) the image retrieval results are clustered in visual characteristic level; and (3) the hierarchical clustering navigation display is realized in a rapid and efficient way. Compared with the traditional image search engine, the invention adds the clustering idea to the image retrieval. The keywords are semantically analyzed to form different subjects; meanwhile, the images are also analyzed in visual characteristic level to cluster similar images in a class, and finally the retrieval results are displayed for the user in classification mode through a concise and clear interface, so as to help users quickly and efficiently find out the required target image from the retrieval results with unsorted subjects.

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.

A method of joining dissimilar materials having different ductility, involves two principal steps: Decoration of the more ductile material's surface with particles of a less ductile material to produce a composite; and, sinter-bonding the composite produced to a joining member of a less ductile material. The joining method is suitable for joining dissimilar materials that are chemically inert towards each other (e.g., metal and ceramic), while resulting in a strong bond with a sharp interface between the two materials. The joining materials may differ greatly in form or particle size. The method is applicable to various types of materials including ceramic, metal, glass, glass-ceramic, polymer, cermet, semiconductor, etc., and the materials can be in various geometrical forms, such as powders, fibers, or bulk bodies (foil, wire, plate, etc.). Composites and devices with a decorated / sintered interface are also provided.

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.

Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.

The present invention generally relates to a magnetic head having a thinner intermixing layer between a barrier layer and a magnetic layer. The method of making the magnetic head is also disclosed. The thinner intermixing layer in the magnetic head is formed by cooling the barrier layer in an atmosphere having a temperature of below 0 degrees Celsius prior to depositing the magnetic layer on the barrier layer. The thinner intermixing layer leads to a sharp interface between the barrier layer and the magnetic layer, which leads to an increased MR.

Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12 / 20 Å TaOx / 700 Å FeCo30.8B12 / 20 Å TaOx / 700 Å FeCo30.8B12 / 20 Å TaOx / 158 Å FeCo30.8B12 / 17 Å Ta / 49 Å ITO / 33 Å CoCr37Ru10 / 2.5 Å COy / 2.5 Å C / [(CoCr9)C6.8 / Pd]19 / 50 Å CHN. [(CoCr9)C6.8 / Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8 / Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides . ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.

The invention relates to a double-layer hard alloy matrix and production method thereof. The double-layer hard alloy matrix comprises a U-shaped structured first hard alloy body and a second hard alloy body; the first hard alloy body covers the second hard alloy body; the first hard alloy body is medium-high cobalt hard alloy; the second hard alloy body is medium-low cobalt hard alloy. The production method of the double-layer hard alloy matrix comprises preforming the second hard alloy body; positioning through a protruding portion of the second hard alloy body; forming into the second hard alloy body; forming into a U-shaped structured double-layer hard alloy base plate by sintering through a lower temperature sintering furnace. According to the double-layer hard alloy matrix and the production method thereof, two hard alloy of the U-shaped structured double-layer hard alloy matrix has clear boundary surfaces and different metallographical structures, the production is simple and controllable, and repeatability of the product performance is high.

A tool or a part thereof which has at least one tool body (7, 8) and one functional part (9) is cast in one united piece with at least two different casting materials (18, 20) of different material compositions, whereby the different parts of tool possess different material properties. Between the different tool parts, there is a clear interface in the material composition, but an intermingled transitional zone (19) of different material compositions is possible. In a method of manufacturing the tool, or a part thereof, casting material of at least two different material compositions is supplied to different parts (7, 8, 9, respectively) of the tool. The casting materials are kept separate and discrete from one another and, after the casting, there is thus obtained a tool possessing different material properties in different parts (7, 8; 9) of the tool.

The invention relates to an immiscible water / polymer two-phase electrolyte and a battery and belongs to the technical field of a chemical power supply. The electrolyte consists of aqueous solution electrolyte and hydrophobic organic polymer electrolyte; the aqueous solution electrolyte is aqueous solution of sulfuric acid, perchloric acid, potassium sulfate, sodium sulfate, potassium hydroxide, sodium hydroxide or copper sulfate; the hydrophobic organic polymer electrolyte consists of a hydrophobic polymer, lithium salt and a hydrophobic organic solvent and has the conductivity of over 10<-4>S / cm; the aqueous solution electrolyte and the hydrophobic organic polymer electrolyte are immiscible and are well contacted and a stable and clear interface is formed; the interface is a flexible, waterproof and oxygen-proof functional region and can replace a rigid solid electrolyte membrane to implement the effect of maintaining the stability of a lithium negative electrode of the battery and the free motion of ions. The immiscible water / polymer two-phase electrolyte can be used for preparing the battery with the lithium negative electrode and is beneficial to the continuous work of the battery. The battery using the electrolyte can be a lithium-air or lithium-metal battery.

The invention discloses a method for preparing a manganese-stabilized hafnia film, which comprises the following steps: using HfO2 and MnO2 as raw materials, weighing the raw materials according to a molar ratio of positive ions in Hf0.8Mn0.2O2 of 4:1, and mixing, grinding and sintering the raw materials; and after the raw materials are grinded and pressed again, repeatedly sintering the raw materials, polishing a sintered sample into a target material, corroding a target body by pulse laser projected onto the surface of the target material at certain substrate temperature, argon partial pressure and target-substrate distance, and depositing the doped hafnia onto a substrate after a plume is formed to obtain the manganese-stabilized hafnia film. The method has the advantages that: the process is simple; the prepared manganese-stabilized hafnia film has good c-axis texture and smooth and compact surface; and an atomic-scale sharp interface is formed between the manganese-stabilized hafnia film and the single crystal substrate.

A method of joining dissimilar materials having different ductility, involves two principal steps: Decoration of the more ductile material's surface with particles of a less ductile material to produce a composite; and, sinter-bonding the composite produced to a joining member of a less ductile material. The joining method is suitable for joining dissimilar materials that are chemically inert towards each other (e.g., metal and ceramic), while resulting in a strong bond with a sharp interface between the two materials. The joining materials may differ greatly in form or particle size. The method is applicable to various types of materials including ceramic, metal, glass, glass-ceramic, polymer, cermet, semiconductor, etc., and the materials can be in various geometrical forms, such as powders, fibers, or bulk bodies (foil, wire, plate, etc.). Composites and devices with a decorated / sintered interface are also provided.

Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12 / 20 Å TaOx / 700 Å FeCo30.8B12 / 20 Å TaOx / 700 Å FeCo30.8B12 / 20 Å TaOx / 158 Å FeCo30.8B12 / 17 Å Ta / 49 Å ITO / 33 Å CoCr37Ru10 / 2.5 Å COy / 2.5 Å C / [(CoCr9)C6.8 / Pd]19 / 50 Å CHN. [(CoCr9)C6.8 / Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8 / Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides. ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.

The invention belongs to the field of processing of titanium and titanium alloy and discloses a method for constructing an orderly micro-nano structure by performing a two-step etching on a titanium and titanium alloy substrate from outside to inside; and the method specifically comprises the steps of polishing, acidic etching and electrochemical etching. The micro-nano structure with an orderly surface prepared by the method is good in repeatability, high in stability, controllable in size and excellent in biological activity and mechanical property. In addition, the structure is formed by transforming a body material, has no sharp interface with the substrate and has no sintering neck, so that the structure has high bonding strength with the titanium substrate.

The invention provides a backup method of management data and content data based on Cloudview. The backup method is to integrate an operating interface to a Cloudview management interface and comprises the follows: step S1, entering into a backup management interface, selecting a backup target and a backup strategy; step S2, judging whether parameters are correct; if so, performing the step S3, otherwise, performing the step S1; step S3, analyzing the backup strategy; and step S4, performing timing backup on the backup target when a backup period arrives. According to the backup method of the management data and content data based on the Cloudview provided by the invention, a user can select a period for automatic backup; as the operating interface is integrated to the Cloudview management interface in the method, a clear interface can be supplied for the user to operate and select, and the user can select different backup strategy based on service demands; and the backup method of the management data and content data based on the Cloudview, disclosed by the invention, has the advantages of simple steps and convenience for maintenance.

In the production of glycidyl methacrylate from an alkali metal salt of methacrylic acid and epichlorohydrin, at least one water-soluble polymerization inhibitor is added at an appropriate stage of the production. The addition of the water-soluble polymerization inhibitor prevents the formation of insoluble solid matters to increase the efficiency of phase separation in the washing operation for removing a by-produced salt and form a clear interface between the phases, thereby minimizing the recovery loss. In addition, the troubles such as clogging of pipe lines of production apparatus and equipment for waster water treatment can be avoided.

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

The invention relates to a double-layer hard alloy matrix and production method thereof. The double-layer hard alloy matrix comprises a U-shaped structured first hard alloy body and a second hard alloy body; the first hard alloy body covers the second hard alloy body; the first hard alloy body is medium-high cobalt hard alloy; the second hard alloy body is medium-low cobalt hard alloy. The production method of the double-layer hard alloy matrix comprises preforming the second hard alloy body; positioning through a protruding portion of the second hard alloy body; forming into the second hard alloy body; forming into a U-shaped structured double-layer hard alloy base plate by sintering through a lower temperature sintering furnace. According to the double-layer hard alloy matrix and the production method thereof, two hard alloy of the U-shaped structured double-layer hard alloy matrix has clear boundary surfaces and different metallographical structures, the production is simple and controllable, and repeatability of the product performance is high.

The invention discloses a method for preparing a manganese-stabilized hafnia film, which comprises the following steps: using HfO2 and MnO2 as raw materials, weighing the raw materials according to a molar ratio of positive ions in Hf0.8Mn0.2O2 of 4:1, and mixing, grinding and sintering the raw materials; and after the raw materials are grinded and pressed again, repeatedly sintering the raw materials, polishing a sintered sample into a target material, corroding a target body by pulse laser projected onto the surface of the target material at certain substrate temperature, argon partial pressure and target-substrate distance, and depositing the doped hafnia onto a substrate after a plume is formed to obtain the manganese-stabilized hafnia film. The method has the advantages that: the process is simple; the prepared manganese-stabilized hafnia film has good c-axis texture and smooth and compact surface; and an atomic-scale sharp interface is formed between the manganese-stabilized hafnia film and the single crystal substrate.

The invention relates to a method for producing a transistor structure, comprised of at least one first and one second bipolar transistor with different collector widths. The invention is characterized in that all junctions between differently doped regions have a sharp interface. A first collector region (2.1) is suited for use in a high-frequency transistor having high limit frequencies fT, and a second collector region (2.2) is suited for use in a high-voltage transistor having increased breakdown voltages.

The invention discloses an urban sewage treatment method and device in a normal temperature operating mode and a low temperature operating mode, and belongs to the technical field of water treatment. The device is composed of a grid, a desilting tank, a primary settling tank, a three-section tank, secondary settling tanks, a contact tank and sludge collecting wells, wherein two groups of secondary settling tanks and sludge collecting wells are provided; each secondary settling tank is composed of a tank body, a water inlet pipe, a central pipe, a water outlet pipe, a sludge suction pipe and a sludge discharging main pipe; a sludge collecting hopper is arranged in the middle of the bottom; an inner end is connected with the central pipe; the central pipe is vertically mounted in the middle of the tank body; a bottom opening is located at a position of the sludge collecting hopper; one sludge suction pipe is mounted on each of four sides in the tank body close to an inner wall of the tank body; a bottom end of each sludge suction pipe is connected with the sludge discharging main pipe; the sludge discharging main pipe is connected with the sludge collecting wells. The treatment method comprises the following steps: the concentration of winter sludge in the three-section tank is controlled in 6000-8000 mg / L; and the two secondary settling tanks operate alternately and intermittently, namely, when one operates, the other performs static settling. The urban sewage treatment method and device provided by the invention increases the concentration of reflux sludge, increases dissolved oxygen transferring efficiency, and adds a static settling link, so that a clear interface is present between sludge and water, and the quality of water discharged from the secondary settling tanks is improved.

In a fermented milk product having a foodstuff layer formed as an upper layer of a fermented milk layer, low-methoxy pectin having an esterification degree of less than 50 is added to the foodstuff layer, the fermented milk layer is configured to have a viscosity of 3500 cp or more; and a value obtained by subtracting the Brix value of the fermented milk layer from the Brix value of the foodstufflayer is adjusted to 21 or less. In a bilayer-type fermented milk product, a sharp interface between a fermented milk layer and a foodstuff layer can be maintained without adding a gelling agent, suchas low-methoxyl pectin and gelatin, to the fermented milk layer.

The invention discloses a method for preparing a one-dimensional CdS / CdSSe heterojunction nanowire through chemical vapor deposition (CVD). The grown nanowire has the length of 50-100 microns and the diameter of 80-400nm. In the preparation process, only one reaction source moving device is utilized, and solid powder source materials are needed to be sequentially replaced to pass through a high-temperature evaporation area. The growth temperature at each stage is strictly controlled, the residual steam of the previous reaction is exhausted by introducing isolation time in the process of replacing the reaction source materials in the growth period, and a clean environment is provided for growth of heterojunctions at different stages. The technical problem that the evaporation source growth heterojunctions are difficultly controlled during traditional CVD is solved, and the CdS / CdSSe heterojunction nanowire with a sharp interface is prepared. The preparation method is simple in process, simple and convenient in operation and low in cost, and the prepared product has high quality.

The invention relates to an adjusting method of natural vegetable fiber and polylactic acid interface. The invention is characterized in that thermal volatilization gas of hexamethyl disiloxane is taken as a gas medium, natural vegetable fiber is treated under normal pressure by a low temperature plasma processor, an ultrathin silicon-oxygen-carbon compound nonpolar layer is deposited on the surface of the natural vegetable fiber, so that the surface performance of the natural vegetable fiber can be modified for achieving the purpose of adjusting the compatibility of the natural vegetable fiber and polylactic acid interface. The invention solves the defects of intelligible interface and poor adhesive stress existed in the composition phase, stress can be effectively conveyed in interfacial energy, so that the compatibility of the natural vegetable fiber and polylactic acid can be improved, thereby the comprehensive properties of the composite material can be raised.