Method for producing a transistor structure
A transistor, bipolar transistor technology, used in transistors, semiconductor/solid state device manufacturing, electric solid state devices, etc., to achieve low marginal capacitance, improved high current behavior, and reduced conduction effects
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[0027] According to the first method of the present invention, a transistor structure for manufacturing two collector regions with different collector widths according to the present invention, as shown in the appended reference drawings FIGS. 1A to 1D , has been It is implemented by the technique of selective seeding.
[0028] The buried layer described in Figure 1A is, for example, n + Type-doped buried layers 5.1 and 5.2 have been introduced into the semiconductor substrate 1 and are insulated from each other by an insulating layer 4, here a deep trench 4 is formed. The semiconductor substrate 1 includes, for example, p-type doped single crystal silicon.
[0029] A first sublayer 6 and a second sublayer 7 are further provided and insulate the insulating layer 4 from the semiconductor substrate 1 and the buried layers 5.1 and 5.2. In this example, the second subsidiary layer 7 is adjacent to the insulating layer 4, and the first subsidiary layer 6 is adjacent to the second...
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