Method for preparing manganese-stabilized hafnia film

A hafnium oxide, stable technology, applied in the field of preparation of manganese-stabilized hafnium oxide thin film, can solve problems such as second-phase oxides, eliminate the formation of amorphous layer and second-phase oxide, and rapidly prepare Effect

Inactive Publication Date: 2009-11-18
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method can overcome the problems of mixed monoclinic phase and high-temperature phase in the preparation of hafnium oxide thin films in the prior art, and the second-phase oxides are prone to appear at the subst

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...

Embodiment 2

[0018] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...

Embodiment 3

[0020] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...

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PUM

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Abstract

The invention discloses a method for preparing a manganese-stabilized hafnia film, which comprises the following steps: using HfO2 and MnO2 as raw materials, weighing the raw materials according to a molar ratio of positive ions in Hf0.8Mn0.2O2 of 4:1, and mixing, grinding and sintering the raw materials; and after the raw materials are grinded and pressed again, repeatedly sintering the raw materials, polishing a sintered sample into a target material, corroding a target body by pulse laser projected onto the surface of the target material at certain substrate temperature, argon partial pressure and target-substrate distance, and depositing the doped hafnia onto a substrate after a plume is formed to obtain the manganese-stabilized hafnia film. The method has the advantages that: the process is simple; the prepared manganese-stabilized hafnia film has good c-axis texture and smooth and compact surface; and an atomic-scale sharp interface is formed between the manganese-stabilized hafnia film and the single crystal substrate.

Description

technical field [0001] The invention relates to a method for preparing a manganese-stabilized hafnium oxide thin film, in particular to a manganese-stabilized hafnium oxide Hf which has wide application potential in the fields of gate dielectrics, magnetic thin films, and high-temperature superconducting coating conductors in oxide semiconductor devices. 0.8 mn 0.2 o 2 The method of film preparation. Background technique [0002] Hafnium oxide (HfO 2 ) bulk materials have broad application potential in oxygen detectors, high-temperature fuel cells, catalytic technology, and photoconductive devices. Hafnium oxide (HfO 2 ) is also a high-temperature structural ceramic material with a melting point as high as 3173K. It has a similar crystal structure and ion conductivity to zirconia, but compared with the latter, HfO 2 The phase transition temperature of the material at high temperature is higher than that of ZrO 2 high, so HfO 2 The material has better thermal shock res...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/28
Inventor 卢亚锋白利锋冯建情李成山闫果
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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