Method for preparing manganese-stabilized zirconia film

A technology for stabilizing zirconia and thin films, which is applied in the field of preparation of manganese-stabilized zirconia thin films, can solve problems such as the easy occurrence of second-phase oxides, eliminate the formation of amorphous layers and second-phase oxides, and achieve rapid preparation Effect

Inactive Publication Date: 2009-11-18
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method can overcome the problems of mixed monoclinic phase and high-temperature phase in the preparation of zirconium oxide films in the prior art, and the second-phase oxides are prone to appear at the subs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0015] Example 1

[0016] ZrO 2 Powder and MnO 2 The powder is the raw material, weigh, mix and grind for 2h according to the molar ratio of Zr:Mn of 3:1, then take it out after 12-24 hours of constant temperature treatment at 1400℃, and then carefully grind for 2h, mix well, weigh 5g a portion , Using a hard steel mold on the tablet press, use a pressure of 10 MPa to form a disk-shaped sample with a diameter of 20 mm and a thickness of 2 mm. The sample is placed in a corundum crucible and placed in a high-temperature furnace with a silicon-carbon tube heating element. In an argon environment, it is sintered at a temperature of 1400°C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr. 0.75 Mn 0.25 O 2 Stabilize the zirconia block material, and prepare the target material after grinding the block material. Then use pulsed laser deposition technology to prepare manganese stabilized zirconia film. The laser used in the experiment is the COMPex205 KrF e...

Example Embodiment

[0017] Example 2

[0018] ZrO 2 Powder and MnO 2 The powder is the raw material, weigh, mix and grind for 2h according to the molar ratio of Zr:Mn of 3:1, then take it out after 12-24 hours of constant temperature treatment at 1400℃, and then carefully grind for 2h, mix well, weigh 5g a portion , Using a hard steel mold on the tablet press, use a pressure of 10 MPa to form a disk-shaped sample with a diameter of 20 mm and a thickness of 2 mm. The sample is placed in a corundum crucible and placed in a high-temperature furnace with a silicon-carbon tube heating element. In an argon environment, it is sintered at a temperature of 1400°C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr. 0.75 Mn 0.25 O 2 Stabilize the zirconia block material, and prepare the target material after grinding the block material. Then use pulsed laser deposition technology to prepare manganese stabilized zirconia film. The laser used in the experiment is the COMPex205 KrF e...

Example Embodiment

[0019] Example 3

[0020] ZrO 2 Powder and MnO 2 The powder is the raw material, weigh, mix and grind for 2h according to the molar ratio of Zr:Mn of 3:1, then take it out after 12-24 hours of constant temperature treatment at 1400℃, and then carefully grind for 2h, mix well, weigh 5g a portion , Using a hard steel mold on the tablet press, use a pressure of 10 MPa to form a disk-shaped sample with a diameter of 20 mm and a thickness of 2 mm. The sample is placed in a corundum crucible and placed in a high-temperature furnace with a silicon-carbon tube heating element. In an argon environment, it is sintered at a temperature of 1400°C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr. 0.75 Mn 0.25 O 2 Stabilize the zirconia block material, and prepare the target material after grinding the block material. Then use pulsed laser deposition technology to prepare manganese stabilized zirconia film. The laser used in the experiment is the COMPex205 KrF e...

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PUM

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Abstract

The invention discloses a method for preparing a manganese-stabilized zirconia film, which comprises the following steps: using metal oxide ZrO2 powder and MnO2 powder as raw materials, weighing the raw materials according to a molar ratio of positive ions in Zr0.75Mn0.25O2 of 3:1, and mixing, grinding and sintering the raw materials; and after he raw materials are grinded and pressed again, repeatedly sintering the raw materials, again, polishing a sintered sample into a target material, corroding a target body by pulse laser projected onto the surface of the target material at certain substrate temperature, argon partial pressure and target-substrate distance, and depositing the doped zirconia onto a yttrium-stabilized zirconia single crystal substrate after a plume is formed to obtain the manganese-stabilized zirconia film. The method has the advantages that: the process is simple; the prepared manganese-stabilized zirconia film has good c-axis texture and smooth and compact surface; and an atomic-scale sharp interface is formed between the manganese-stabilized zirconia film and the single crystal substrate.

Description

technical field [0001] The invention relates to a method for preparing a manganese-stabilized zirconia film, in particular to a manganese-stabilized zirconia Zr oxide film with wide application potential in the fields of gate dielectrics, magnetic films, and high-temperature superconducting coating conductors in oxide semiconductor devices. 0.75 mn 0.25 o 2 The method of film preparation. Background technique [0002] Zirconia (ZrO 2 ) materials have broad application potential in oxygen detectors, high-temperature fuel cells, catalytic technology, and photoconductive devices. Zirconia (ZrO 2 ) is also a high-temperature structural ceramic material with a melting point as high as 2973K. In the atmospheric environment, there are three allotropes of zirconia, namely monoclinic (m-ZrO 2 ), tetragonal system (t-ZrO 2 ) and cubic system (c-ZrO 2 ). Pure ZrO 2 During the cooling process after sintering, a martensitic transformation from tetragonal phase to monoclinic pha...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/48
Inventor 卢亚锋白利锋冯建情李成山闫果
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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