Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
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embodiment 1
[0049]In this embodiment, one embodiment of a semiconductor device and a manufacturing method thereof will be described with reference to FIGS. 1A to 1C, FIGS. 2A to 2E, FIGS. 3A to 3D, FIGS. 4A to 4D, and FIGS. 5A to 5C. In this embodiment, a transistor using an oxide semiconductor film is described as an example of the semiconductor device.
[Structural Example 1 of Semiconductor Device]
[0050]FIGS. 1A to 1C illustrate a structural example of a transistor 150. FIG. 1A is a plan view of the transistor 150, FIG. 1B is a cross-sectional view taken along the line X1-Y1 in FIG. 1A, and FIG. 1C is a cross-sectional view taken along the line V1-W1 in FIG. 1A. Note that in FIG. 1A, some components of the transistor 150 (e.g., a gate insulating film 106) are not illustrated for clarity.
[0051]The transistor 150 illustrated in FIGS. 1A to 1C includes a gate electrode 104 formed over a substrate 102, a gate insulating film 106 formed over the gate electrode 104, an oxide semiconductor film 108 f...
embodiment 2
[0180]In this embodiment, a modification example of the semiconductor device in Embodiment 1 and a method for manufacturing a semiconductor device, which is different from that in Embodiment 1, will be described with reference to FIGS. 6A and 6B, FIGS. 7A to 7D, and FIGS. 8A to 8D. Note that portions similar to those in FIGS. 1A to 1C, FIGS. 2A to 2E, FIGS. 3A to 3D, FIGS. 4A to 4D, and FIGS. 5A to 5C are denoted by the same reference numerals, and description thereof is omitted.
[Structural Example 2 of Semiconductor Device]
[0181]FIGS. 6A and 6B illustrate a structural example of a transistor 250 and a signal line region 260. FIG. 6A is a plan view of the transistor 250 and the signal line region 260. FIG. 6B is a cross-sectional view taken along the line X2-Y2 in FIG. 6A. Note that in FIG. 6A, some components of the transistor 250 and the signal line region 260 (e.g., a gate insulating film 206 and a second metal film 210b) are omitted to avoid complexity.
[0182]A semiconductor devi...
embodiment 3
[0220]A display device with a display function can be manufactured using the transistor exemplified in Embodiment 1 or Embodiment 2 and the signal line exemplified in Embodiment 2. Moreover, some or all of the driver circuits which include the transistor can be formed over a substrate where the pixel portion is formed, whereby a system-on-panel can be obtained. An example of the display device will be described with reference to FIG. 9.
[0221]In FIG. 9, a sealant 312 is provided so as to surround a pixel portion 302, a source driver circuit portion 304, and a gate driver circuit portion 306 which are provided over a first substrate 300. The second substrate 301 is provided over the pixel portion 302, the source driver circuit portion 304, and the gate driver circuit portion 306. Thus, the pixel portion 302, the source driver circuit portion 304, and the gate driver circuit portion 306 are sealed together with a display element by the first substrate 300, the sealant 312, and the seco...
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