A single crystal growth apparatus and a single crystal growth method capable of controlling a melt dripping manner
By introducing an adjustable feed structure into the single crystal growth device, the problems of thermal shock, mechanical shock, and uneven temperature distribution in the traditional droplet method are solved, enabling precise control of the amount and frequency of raw material melt dripping, thus improving the quality and efficiency of single crystal growth.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HANGZHOU FUJIA GALLIUM TECH CO LTD
- Filing Date
- 2026-03-25
- Publication Date
- 2026-06-05
AI Technical Summary
Traditional droplet methods for single crystal growth suffer from problems such as thermal shock, mechanical shock, uneven temperature distribution, and low feed control precision, which affect crystal quality.
An adjustable feeding structure is adopted, including a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type porous planar feeding structure, to precisely control the dripping amount and frequency of the raw material melt. The pressure is adjusted by the pressurized nozzle structure, the droplet size is controlled by the ultrasonic vibration structure, and the temperature distribution is optimized by the array-type porous planar feeding structure.
It effectively reduces thermal and mechanical shock, improves the uniformity of temperature distribution and the precision of feeding control, and enhances the quality and efficiency of single crystal growth.
Smart Images
Figure CN122147542A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor material preparation technology, and in particular to a single crystal growth apparatus and method with controllable melt droplet delivery. Background Technology
[0002] Gallium oxide (Ga2O3), especially its most stable β phase (β-Ga2O3), has shown great application potential in power electronic devices and deep ultraviolet photodetectors as an ultrawide bandgap semiconductor material, and is considered to be the next generation of core power electronics materials after silicon carbide (SiC) and gallium nitride (GaN). The fabrication of large-size, high-quality β-Ga2O3 single-crystal substrates is a key prerequisite for its industrial application. Currently, melt methods, such as the Czochralski (CZ) method, edge-defined film-fed growth (EFG) method, and vertical Bridgman (VB) method, are the mainstream technologies for growing high-quality β-Ga2O3 single crystals. These methods all require high-temperature environments because the melting point of β-Ga2O3 is as high as approximately 1800℃. Such high temperatures place extremely stringent requirements on the crucible materials that support and heat the gallium oxide melt. Currently, precious metals such as iridium (Ir) are commonly used as crucible materials in the industry. Therefore, crucible-free single crystal growth technology has become an important development direction.
[0003] In the field of single crystal growth, the traditional droplet method is a common raw material supply method. Its operating principle involves using gravity to drop molten raw material onto the surface of the seed crystal (i.e., the seed crystal). However, the traditional droplet method has the following significant drawbacks in practical applications: 1. Thermal shock problem: When molten raw material drips from a high-temperature area onto the surface of the seed crystal or the growing crystal, it will cause a drastic change in temperature gradient, thereby generating destructive thermal stress on the crystal surface.
[0004] 2. Mechanical impact problem: Droplets directly impact the surface of the growing crystal, generating mechanical impact, which can easily lead to defects and microcracks on the crystal surface, and even affect the overall crystal quality.
[0005] 3. Uneven temperature distribution: Traditional single-point or a few-point feeding methods make it difficult to form a uniform temperature field on the crystal growth surface, especially when manufacturing large-size crystals, where the temperature difference between the center and the edge is more prominent.
[0006] 4. Low feed control precision: The raw material supply mainly relies on gravity dripping, and the droplet size remains basically constant, making it difficult to form smaller droplets.
[0007] Therefore, existing technologies still need to be improved and developed. Summary of the Invention
[0008] In view of the shortcomings of the prior art, the purpose of this invention is to provide a single crystal growth apparatus and a single crystal growth method with controllable melt dripping mode, which aims to solve the problems of thermal shock, mechanical shock, uneven temperature distribution and low feeding control accuracy of the existing dripping method.
[0009] The technical solution of the present invention is as follows: A first aspect of the present invention provides a single crystal growth apparatus with controllable melt dripping mode, wherein the single crystal growth apparatus comprises: The insulation layer includes an upper insulation layer and a lower insulation layer, wherein the upper insulation layer has through holes; The growth chamber is located within the insulation layer; A heat insulation plate with through holes divides the growth chamber into upper and lower parts; A heating element is disposed above the heat insulation plate, and the heating element is heated by an external induction coil. A support column is located below the growth chamber to support the seed crystal and control its raising and lowering. An adjustable feeding structure is used to allow the raw material melt to drip onto the surface of the seed crystal, and to control the amount and frequency of the raw material melt dripping.
[0010] The single crystal growth apparatus with controllable melt dripping method, wherein the adjustable feeding structure includes one of a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type porous planar feeding structure; The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type porous planar feeding structure includes a feeding channel and an array-type porous planar feeding module disposed at the bottom of the feeding channel. The array-type porous planar feeding module includes a feeding plane with multiple small holes evenly distributed. The feeding channel has a through hole that penetrates the upper insulation layer.
[0011] The single crystal growth apparatus with controllable melt dripping method, wherein the adjustable feeding structure includes a pressurized nozzle structure and an ultrasonic vibration structure; The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel.
[0012] The single crystal growth apparatus with controllable melt dripping method, wherein the adjustable feeding structure includes a pressurized nozzle structure and an array of porous planar feeding structures; The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
[0013] The single crystal growth apparatus with controllable melt dripping method, wherein the adjustable feeding structure includes an ultrasonic vibration structure and an array-type porous planar feeding structure; The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module disposed at the bottom of the feeding channel, and the array-type multi-hole planar feeding module includes a feeding plane with a plurality of small holes evenly distributed.
[0014] The single crystal growth apparatus with controllable melt dripping method, wherein the adjustable feeding structure includes a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type porous planar feeding structure; The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel; The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
[0015] The single crystal growth apparatus with controllable melt dripping method, wherein the pressure control module of the pressurized nozzle structure adopts a precision metering pump or pressure regulation system, and the pressure control range is 0.1 to 1.0 MPa.
[0016] The single crystal growth apparatus with controllable melt droplet method, wherein the ultrasonic vibration module operates at a frequency of 20 to 100 kHz and a power of 10 to 100 W.
[0017] The single crystal growth apparatus with controllable melt dripping method, wherein the number of the small holes is 4 to 16, the shape of the small holes is circular or square, and the diameter of the small holes is 0.5 to 1.5 mm.
[0018] In a second aspect, the present invention provides a single crystal growth method, wherein the single crystal is grown using a single crystal growth apparatus with a controllable melt dripping method as described in the present invention.
[0019] Beneficial Effects: The single crystal growth apparatus of this invention includes: a heat insulation layer comprising an upper heat insulation layer and a lower heat insulation layer, the upper heat insulation layer having a through hole; a growth chamber located within the heat insulation layer; a heat insulation plate with through holes, the heat insulation plate dividing the growth chamber into upper and lower parts; a heating element disposed above the heat insulation plate, the heating element being heated by an external induction coil; a support column disposed below the growth chamber for supporting the seed crystal and controlling the raising and lowering of the seed crystal; and an adjustable feeding structure for dripping the raw material melt onto the surface of the seed crystal and controlling the dripping amount and frequency of the raw material melt. This invention employs an adjustable feeding structure, which can achieve precise adjustment of the dripping amount of the raw material melt and accurately control the dripping frequency of the raw material melt to meet the needs of different single crystal growth processes or the growth process requirements of the same single crystal at different growth stages. This adjustable feeding method can effectively improve the quality and efficiency of single crystal growth and reduce crystal defects caused by uncontrollable feeding. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of a pressure-controlled dripping method.
[0021] Figure 2 This is a schematic diagram of an ultrasonic vibration structure-controlled feeding method.
[0022] Figure 3 This is a schematic diagram of an array-type porous feeding structure. Detailed Implementation
[0023] This invention provides a single crystal growth apparatus and method with controllable melt dripping mode. To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention is further described in detail below. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0024] In the field of single crystal growth, the traditional droplet method is a common raw material supply method. Its operating principle is to use gravity to drop molten raw material onto the seed crystal surface. However, the traditional droplet method has problems in practical applications, such as thermal shock, mechanical shock, uneven temperature distribution, and low feeding control precision.
[0025] Based on this, the present invention provides a single crystal growth apparatus with controllable melt dripping mode, wherein the heat insulation layer includes an upper heat insulation layer and a lower heat insulation layer, and the upper heat insulation layer has through holes; The growth chamber is located within the insulation layer; A heat insulation plate with through holes divides the growth chamber into upper and lower parts; A heating element is disposed above the heat insulation plate, and the heating element is heated by an external induction coil. A support column is located below the growth chamber to support the seed crystal and control its raising and lowering. An adjustable feeding structure is provided, which is used to allow the raw material melt to drip onto the surface of the seed crystal and to control the amount and frequency of the dripping of the raw material melt. The adjustable feeding structure of this invention includes a feeding channel that penetrates through a through-hole in the upper insulation layer, with its end located above a through-hole in the heat insulation plate, for allowing the raw material melt to drip onto the surface of the seed crystal. This adjustable feeding structure can also precisely control the dripping amount and frequency of the raw material melt. This adjustable feeding method allows the raw material melt to drip controllably onto the seed crystal surface, effectively avoiding the problems of thermal shock, mechanical shock, uneven temperature distribution, and low feeding control precision associated with traditional droplet methods.
[0026] In one embodiment, the adjustable feeding structure includes one of a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type porous planar feeding structure; The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type porous planar feeding structure includes a feeding channel and an array-type porous planar feeding module disposed at the bottom of the feeding channel. The array-type porous planar feeding module includes a feeding plane with multiple small holes evenly distributed. The feeding channel has a through hole that penetrates the upper insulation layer.
[0027] The pressurized nozzle structure changes the velocity and flow rate of the molten material flowing out of the nozzle by applying different pressures, thereby precisely controlling the dripping amount and frequency of the molten material. When it is necessary to increase the dripping amount and frequency, the pressure is appropriately increased, allowing more molten material to flow out of the nozzle quickly under pressure; to reduce the dripping amount and frequency, the pressure is reduced, slowing down the flow rate of the molten material.
[0028] An ultrasonic vibration structure breaks a continuous flow of molten raw material into uniformly sized droplets. By adjusting the frequency and power of the ultrasound, the size of the droplets and the droplet frequency can be controlled. Higher ultrasonic frequencies and power produce smaller droplets and increase the droplet frequency; conversely, lower ultrasonic frequencies and power form larger droplets and decrease the droplet frequency.
[0029] The array-type porous planar feed structure includes multiple evenly distributed small holes that allow the molten raw material to drip simultaneously in the form of multiple droplets. By changing the diameter and number of the small holes, the drip rate and frequency of the molten raw material can be adjusted. Larger diameter holes or more holes increase the drip rate, while a reasonable layout of the hole spacing and arrangement helps to optimize the drip frequency, making the entire feeding process more stable and controllable.
[0030] Through the above three structures, the adjustable feed structure can flexibly and precisely control the dripping amount and frequency of the raw material melt according to different stages and needs of single crystal growth, providing a strong guarantee for the growth of high-quality single crystals. The pressurized nozzle structure includes: Pressure control module: This is an integrated module for regulating the internal pressure of the high-temperature molten pool. It mainly uses a precision metering pump or pressure regulation system to generate a stable supply pressure. It can use gases (such as oxygen, nitrogen, carbon dioxide, argon) to precisely control the nozzle outlet pressure. The preferred pressure range is 0.1 to 1.0 MPa.
[0031] Nozzle: Designed with precision-machined nozzles, the diameter of which ranges from 0.5 to 2.0 mm.
[0032] The working principle of the pressurized nozzle structure is as follows: a constant pressure is applied to the molten raw material through a pressure control module, causing it to be ejected through the nozzle at a controlled flow rate. Compared to gravity dripping, this method allows for relatively precise control of both the spray rate and droplet size.
[0033] The ultrasonic vibration structure includes: Ultrasonic Vibration Module: This is an integrated module for ultrasonic frequency control and ultrasonic wave transmission, with an operating frequency range of 20 to 100 kHz and a power range of 10 to 100 W. It controls the size and frequency of the falling droplets by generating ultrasonic waves with adjustable energy and frequency. Working Principle of the Ultrasonic Vibration Structure: The high-frequency mechanical vibration generated by the ultrasonic vibration module acts on the raw material liquid flow, utilizing acoustic cavitation and resonance effects to efficiently decompose large droplets into microdroplets. The diameter of the microdroplets can be controlled between 10 and 100 μm, effectively reducing impact.
[0034] The array-type porous planar feeding structure includes: Array-type multi-hole planar feed module: A feed plane is integrated above or inside the heat insulation plate, on which multiple small holes are evenly distributed. Small hole array: Multiple small holes are arrayed on the feed plane. The number of small holes ranges from 4 to 16, designed according to the target crystal diameter. These small holes can be arranged in a circular or square array. Hole spacing and diameter: The hole diameter is 0.5 to 1.5 mm, and the hole spacing is optimized according to the crystal diameter and the required temperature uniformity. Temperature distribution control: By independently or proportionally adjusting the flow rate of each small hole, the temperature distribution at the crystal growth interface can be flexibly shaped, achieving precise control from a flat distribution to a "convex" distribution.
[0035] In one embodiment, the adjustable feeding structure includes a pressurized nozzle structure and an ultrasonic vibration structure; The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel.
[0036] This combination can further optimize the size of the dripping droplets and precisely control the particle size of the dripping molten droplets, while the flow rate can be adjusted using a pressure control module. It is mainly suitable for the growth of crystalline materials that grow slowly or with relatively small feed amounts; it can also further refine the dripping droplets by increasing the pressure, making them into spray-like molten droplets, which can be applied to the growth of thin film materials in high-temperature methods. In one embodiment, the adjustable feeding structure includes a pressurized nozzle structure and an array of porous planar feeding structures; The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
[0037] When the pressurized nozzle structure is combined with the array-type multi-hole planar feeding structure, it is only necessary to replace the nozzle in the pressurized nozzle structure with the array-type multi-hole planar feeding module. In one embodiment, the adjustable feeding structure includes an ultrasonic vibration structure and an array-type porous planar feeding structure; The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module disposed at the bottom of the feeding channel, and the array-type multi-hole planar feeding module includes a feeding plane with a plurality of small holes evenly distributed.
[0038] In one embodiment, the adjustable feeding structure includes a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type porous planar feeding structure. The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel; The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
[0039] In summary, the core improvement of this invention compared to existing technologies lies in the modification of the raw material feeding method. Specifically, it involves a combination of one or more of the following three methods: pressurized nozzle, ultrasonic vibration, and array-type multi-hole feeding, to achieve crystal growth for different needs. This raw material feeding method solves the problems of thermal shock, mechanical shock, uneven temperature distribution, and low feeding control precision of the traditional dripping method. Furthermore, it can be flexibly adapted to different scenarios according to crystal growth requirements: pressurized nozzle + ultrasonic vibration is mainly suitable for slow-growing or relatively small-volume crystal materials, while array-type multi-hole feeding is suitable for crystal materials with large-volume feed and requiring relatively uniform radial temperature distribution.
[0040] To further optimize performance or address different application scenarios, the nozzles in the pressurized nozzle structure of this invention can be multi-stage nozzles, adjustable-angle nozzles, or pulse jets; the ultrasound can be multi-frequency ultrasound, a combination of ultrasound and airflow assistance, or frequency adaptive adjustment; the feeding array can be designed as a dynamic array, a spiral array, or a layered feeding structure.
[0041] It should be noted that the first step in manufacturing this single crystal growth apparatus is to create the insulation layer. Both the upper and lower insulation layers must be made of suitable insulation materials to ensure good insulation performance. The through-holes in the upper insulation layer must be precisely machined to ensure dimensional accuracy, in order to fit the subsequent feeding structure.
[0042] The manufacturing of the growth chamber must ensure the airtightness and stability of its internal space to prevent external factors from interfering with the single crystal growth process. The heat insulation board should be made of materials with excellent thermal insulation properties, and during installation, it must ensure that it divides the growth chamber into upper and lower parts. Furthermore, the design with through holes should be reasonable to ensure the transfer of heat and matter.
[0043] The heating element must be installed in conjunction with an external induction coil to ensure effective heating. The support pillars must be manufactured to ensure their strength and stability, capable of supporting the seed crystal and controlling its rise and fall.
[0044] For adjustable feeding structures, the pressure control module of the pressurized nozzle structure must be debugged to ensure accurate adjustment of the pressure inside the through-hole. The nozzle design and installation must ensure that the melt drips evenly. For ultrasonic vibration structures, the ultrasonic vibration module must be firmly installed, and its vibration frequency and intensity must be adjustable according to actual needs. The fabrication of array-type multi-hole planar feeding structures must ensure that the holes are evenly distributed and of consistent size to achieve a stable supply of melt.
[0045] After the entire device is manufactured, comprehensive commissioning and testing are required. This includes checking the secure connections and proper functioning of all components. Performance tests are conducted on the pressure control module and ultrasonic vibration structure to ensure accurate control of the melt drop pattern, providing stable conditions for single crystal growth. Simultaneously, the overall thermal insulation performance and heat distribution of the device are tested to guarantee the stability and consistency of the single crystal growth environment.
[0046] This invention provides a single crystal growth method, wherein the single crystal is grown using a single crystal growth apparatus with controllable melt dripping as described in this invention.
[0047] Taking the combination of three methods—pressurized nozzle, ultrasonic vibration, and array-type porous feed—as an example, the single crystal growth process is described in detail: 1. Equipment preparation: Install seed crystals, start the heating system, check and adjust the pressure nozzle and ultrasonic vibration structure, and finally pre-melt the upper surface of the seed crystals.
[0048] 2. Raw material supply: The pressurized nozzle and ultrasonic vibration structure are activated. After ultrasonic treatment, the molten raw material is uniformly sprayed onto the seed crystal surface in the form of microdroplets, forming a uniform liquid film. During the growth process, the raw material is continuously supplied, and the flow rate of each nozzle or orifice is dynamically adjusted according to the growth status.
[0049] 3. Crystal growth: Stages such as necking, shoulder expansion, and constant diameter growth are performed as needed. The uniform temperature field provided by the array-type feed is particularly beneficial in suppressing defects such as twinning during the shoulder expansion stage.
[0050] 4. Crystal Harvesting: After growth is complete, stop supplying raw materials, control the cooling rate, and finally remove the high-quality single crystal from the device.
[0051] This method not only increases the temperature uniformity of the seed crystal surface, but also increases the amount of liquid droplets, thus accelerating the crystal growth rate.
[0052] In summary, this invention provides a single crystal growth apparatus and method with controllable melt dripping. The invention employs an adjustable feed structure, enabling precise adjustment of the amount of raw material melt dripping and accurate control of the melt dripping frequency to meet the needs of different single crystal growth processes or the growth process requirements of the same single crystal at different growth stages. This adjustable feed method effectively improves the quality and efficiency of single crystal growth and reduces crystal defects caused by uncontrollable feed.
[0053] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.
Claims
1. A single crystal growth apparatus with controllable melt dripping method, characterized in that, The single crystal growth apparatus includes: The insulation layer includes an upper insulation layer and a lower insulation layer, wherein the upper insulation layer has through holes; The growth chamber is located within the insulation layer; A heat insulation plate with through holes divides the growth chamber into upper and lower parts; A heating element is disposed above the heat insulation plate, and the heating element is heated by an external induction coil. A support column is located below the growth chamber to support the seed crystal and control its raising and lowering. An adjustable feeding structure is used to allow the raw material melt to drip onto the surface of the seed crystal, and to control the amount and frequency of the raw material melt dripping.
2. The single crystal growth apparatus with controllable melt dripping method according to claim 1, characterized in that, The adjustable feeding structure includes one of the following: a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type multi-hole planar feeding structure. The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type porous planar feeding structure includes a feeding channel and an array-type porous planar feeding module disposed at the bottom of the feeding channel. The array-type porous planar feeding module includes a feeding plane with multiple small holes evenly distributed. The feeding channel has a through hole that penetrates the upper insulation layer.
3. The single crystal growth apparatus with controllable melt dripping method according to claim 1, characterized in that, The adjustable feeding structure includes a pressurized nozzle structure and an ultrasonic vibration structure; The pressurizing nozzle structure includes a pressure regulating module, a feeding channel, and a nozzle. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The nozzle is located at the bottom of the feeding channel. The feeding channel passes through a through hole in the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel.
4. The single crystal growth apparatus with controllable melt dripping method according to claim 1, characterized in that, The adjustable feeding structure includes a pressurized nozzle structure and an array-type multi-hole planar feeding structure. The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
5. The single crystal growth apparatus with controllable melt dripping method according to claim 1, characterized in that, The adjustable feeding structure includes an ultrasonic vibration structure and an array-type porous planar feeding structure. The ultrasonic vibration structure includes an ultrasonic vibration module and a feeding channel. The ultrasonic vibration module is located at the top of the feeding channel, and the feeding channel passes through the through hole of the upper insulation layer. The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module disposed at the bottom of the feeding channel, and the array-type multi-hole planar feeding module includes a feeding plane with a plurality of small holes evenly distributed.
6. The single crystal growth apparatus with controllable melt dripping method according to claim 1, characterized in that, The adjustable feeding structure includes a pressurized nozzle structure, an ultrasonic vibration structure, and an array-type multi-hole planar feeding structure. The pressurizing nozzle structure includes a pressure regulating module and a feeding channel. The pressure regulating module is located at the top of the feeding channel and is used to regulate the pressure inside the feeding channel. The feeding channel passes through the through hole of the upper insulation layer. The ultrasonic vibration structure includes an ultrasonic vibration module, and the pressure control module and the ultrasonic vibration module are integrated and disposed at the top of the feeding channel; The array-type multi-hole planar feeding structure includes an array-type multi-hole planar feeding module, which includes a feeding plane with multiple small holes evenly distributed, and the array-type multi-hole planar feeding module is disposed at the bottom of the feeding channel.
7. The single crystal growth apparatus with controllable melt dripping according to claim 2, 3, 4 or 6, characterized in that, The pressure control module of the pressurizing nozzle structure adopts a precision metering pump or pressure regulation system, with a pressure control range of 0.1 to 1.0 MPa.
8. The single crystal growth apparatus with controllable melt dripping according to claim 2, 3, 5 or 6, characterized in that, The ultrasonic vibration module operates at a frequency of 20 to 100 kHz and has a power of 10 to 100 W.
9. The single crystal growth apparatus with controllable melt dripping according to claim 2, 4, 5 or 6, characterized in that, The number of holes is 4 to 16, the shape of the holes is circular or square, and the diameter of the holes is 0.5 to 1.5 mm.
10. A method for growing a single crystal, characterized in that, Single crystal growth is performed using the single crystal growth apparatus with controllable melt dripping as described in any one of claims 1 to 9.