Preparation method of CsPbI3 thin film
A technology of thin film and single crystal silicon, which is applied in the field of preparation of CsPbI3 thin film, can solve the problems of complex preparation method and low film quality, and achieve the effect of simple preparation method, compatible preparation process and low reaction temperature
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[0033] a CsPbI 3 Thin film preparation method, using laser pulse deposition technology to etch CsPbI 3 Target material, all-inorganic CsPbI prepared under vacuum conditions 3 Perovskite film, that is, the target is placed in the vacuum growth chamber of the pulsed laser deposition system, and the high-power pulsed laser is used to etch CsPbI at high temperature 3 The target material forms a plasma plume, undergoes adiabatic expansion of the plasma, and finally directional diffuses to the silicon substrate to nucleate and grow, forming CsPbI 3 film.
[0034] Such as figure 1 As shown, it specifically includes the following steps:
[0035] S1: Clean the surface of the single crystal silicon substrate, dry it with nitrogen, and put it into the vacuum growth chamber of the pulsed laser deposition system;
[0036] Perform standard RCA cleaning on the monocrystalline silicon substrate to remove organic matter, metal ion impurities and dust on the surface;
[0037] S2: The targ...
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