Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method

Abstract

The invention discloses an Al2O3 / AlN / GaN / AlGaN / GaN double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and a manufacturing method. The double-channel MOS-HEMT device comprises a GaN nucleating layer 9, a GaN buffer layer 8, an AlGaN lower barrier layer 7, a GaN channel layer 6, an AlN upper barrier layer 5, an Al2O3 gate dielectric layer 4, a source electrode 1, a drain electrode 3 and a gate electrode 2, wherein the GaN nucleating layer 9, the GaN buffer layer 8, the AlGaN lower barrier layer 7, the GaN channel layer 6 and the AlN upper barrier layer 5 are formed on a sapphire substrate 10 in sequence, the Al2O3 gate dielectric layer 4, the source electrode 1 and thea drain electrode 3 are formed on the AlN upper barrier layer 5, and the gate electrode 2 is formed on the Al2O3 gate dielectric layer 4. The invention is characterized in that an AlN material with good heat conductivity and greater forbidden band width is used as the upper barrier layer, so that the self heating effect of the device is reduced, and the threshold voltage of the device in a depletion mode is reduced; a depth potential well made from AlN and GaN is used for suppressing the hot electron effect under high voltage, so that the current collapse effect of the device is reduced; the strong polarization feature of the AlN material is used to increase the electron concentration in the channel and increase the saturation current and the output power of the device; and the Al2O3 material deposited by using the atomic layer deposition process is used as the gate dielectric layer, so that the leakage current of the gate electrode is reduced, and the breakdown voltage of the device is increased.

Description

technical field [0001] The present invention relates to electronic component technology, in particular to Al with a high concentration of two-dimensional electron gas 2 o 3 / AlN / GaN / AlGaN / GaN dual-channel MOS-HEMT devices, which can be used in high-temperature, high-frequency, high-power applications, high-power switches, and digital circuits. Background technique [0002] The third-generation wide-bandgap semiconductor devices represented by gallium nitride and silicon carbide are new types of wide-bandgap semiconductor devices that have developed rapidly in the past 10 years after the first and second-generation semiconductor devices (Si, GaAs). Among them, GaN is currently the most popular compound semiconductor device material. It has a large band gap, high electron drift speed, high thermal conductivity, and has the characteristics of high pressure resistance, thermal decomposition resistance, corrosion resistance and radiation resistance. It is suitable for making ul...

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Problems solved by technology

However, AlGaN / GaN / AlGaN / GaN dual-channel HEMTs also have obvious disadvantages: 1. The self-heating effect is obvious; 2. The current collapse effect is significant; 3. The threshold voltage in depletion mode is too large; 4. The gate leakage current is serious

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