Preparation method of CuI nanostructure

A technology of nanostructure and electron beam evaporation, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of low preparation temperature, complicated operation, high preparation temperature, etc., and achieve simple preparation method and large area Uniformity and low reaction temperature
CN107083532AInactive Publication Date: 2017-08-22LUDONG UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
LUDONG UNIVERSITY
Publication Date
2017-08-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for preparing a CuI nanostructure, comprising the following steps: cleaning the surface of a single crystal silicon substrate, and putting it into a vacuum growth chamber of an electron beam evaporation device; growing on the surface of a single crystal silicon by electron beam evaporation A layer of copper film; the obtained silicon-based copper film is suspended in the reactor, placed horizontally above the solution, and the precursor solution in the reactor is CuCl 2 , a mixed aqueous solution of polyvinylpyrrolidone and KI; seal the reactor and place it in a blast drying oven for hydrothermal reaction at 120-200°C; after the reaction, take out the sample, wash it, and dry it. For the first time, the present invention uses Cu film and iodine vapor evaporated by hydrothermal synthesis as reaction raw materials to prepare large-area and uniform CuI nanomaterials under low temperature and high pressure conditions, and the preparation process is compatible with the preparation process of optoelectronic devices.
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Description

technical field

[0001] The invention relates to a preparation method of a CuI nanostructure, which belongs to the technical field of semiconductor materials. Background technique

[0002] CuI is a wide-bandgap semiconductor material with direct bandgap, the bandgap width is 3.1eV, and the exciton binding energy is as high as about 62meV. The CuI material has a high transmittance (80%) in the visible light region. Because CuI materials generally have excess iodide ions and cause copper vacancy defects, they exhibit p-type conductivity and high hole mobility (>40cm 2 V -1 the s -1 ). In addition, CuI has the advantages of non-toxicity, abundant reserves, and low cost. These advantages make CuI materials show broad application prospects in the fields of solar cells, photodetectors, photoelectric sensors, display devices and transparent conductive films.

[0003] At present, people have realized the preparation of CuI thin films and nanostructures by various methods, in...

Claims

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