Tunneling field effect transistor and preparation method thereof

A tunneling field effect and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as leakage current rise and sacrifice device performance

Active Publication Date: 2011-09-28
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, while these solutions limitedly increase the drive current of the device, it will

Method used

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  • Tunneling field effect transistor and preparation method thereof
  • Tunneling field effect transistor and preparation method thereof
  • Tunneling field effect transistor and preparation method thereof

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[0098] figure 2 Is an embodiment of the first manufacturing method of the tunneling field effect transistor disclosed in the present invention, wherein figure 2 (a) is a cross-sectional view of the device along the channel length direction, figure 2 (b) is the top view of the device. The device has three electrodes: drain electrode D, gate electrode G and source electrode S, which is a three-terminal device. The device includes a first gate stack region, a second gate stack region, a first source region 201, a second source region 203, a drain region 202, and a substrate region 210. The first gate stack region includes a first insulating layer 204 and a first conductive layer 206, and the second gate stack region includes a second insulating layer 205 and a second conductive layer 207. The insulating film material used for the first insulating layer 204 and the second insulating layer 205 is silicon dioxide grown by thermal oxidation or deposition, and it can also be a high-...

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Abstract

The invention discloses a tunneling field effect transistor and a preparation method thereof. The transistor comprises: a semiconductor substrate, a first channel region and a second channel region, a first gate stack zone, a second gate stack zone, a first source zone, a leakage zone, a second source zone a third insulating layer and a source electrode S, wherein the first conducting layer in the first gate stack zone is connected with the second conducting layer of the second gate stack outside the channel region to form a interdigital grid; the electrodes of the first source zone and second source zone, the drain electrode in the leakage zone and the gate electrode G on the interdigital grid are formed in the third insulating layer. According to the invention, the work current of the tunneling field effect device provided in the invention is a tunneling current and the work current is a current of an MOS (Metal-Oxide-Semiconductor) field effect transistor. The driving current is substantially improved. Meanwhile, the manufacture technology is compatible with the tradition technology and the area is saved, because the interdigital structure is adopted and the first source zone plays a role in substrate lead-out.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a tunneling field effect transistor and a preparation method thereof. The driving capability of the tunneling field effect transistor is equivalent to that of a metal-oxide-semiconductor field effect transistor. Background technique [0002] In the development of integrated circuit device technology, the size of the device is continuously reduced according to Moore's law; from the theory of proportional reduction, when the channel length is continuously reduced, the short channel effect becomes more and more obvious. This will cause serious leakage of the device, making it difficult to meet the requirements of practical applications, or even fail to work normally. Therefore, it is necessary to seek new device solutions to meet the performance requirements of the next generation of devices. The tunneling field effect transistor is a device with a new wor...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/10H01L21/336
Inventor 黄如邱颖鑫詹瞻黄芊芊毛翔
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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