Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof

A technology of devices and emitters, which is applied in the field of power semiconductor devices, can solve problems that affect the stability of power electronic systems and devices cannot be turned on normally.

Inactive Publication Date: 2013-11-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Snapback phenomenon is more obvious under low temperature conditions, which will cause the device to fail to turn on normally and seriously affect the stability of the power electronic system

Method used

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  • Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof
  • Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof
  • Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0019] An RC-IGBT device whose cell structure is as follows figure 2 As shown, it includes an emitter structure, a collector structure, a gate structure and a drift region structure; the emitter structure includes a metal emitter 1, a P+ ohmic contact region 2, an N+ emitter region 3 and a P-type base region 4, wherein P+ The ohmic contact region 2 and the N+ emitter region 3 are independently located in the P-type base region 4, and the surfaces of the P+ ohmic contact region 2 and the N+ emitter region 3 are all in contact with the metal emitter 1; the collector structure includes a P+ collector Electric region 9, N+ collector short-circuit region 11 and metal collector 10, wherein N+ collector short-circuit region 11 and P+ collector region 9 are spaced apart from each other, and the lower surfaces of both are in contact with metal collector 10; The drift region structure includes an N-drift region 7, and the bottom of the N-drift region 7 has an N-type electric field stop...

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Abstract

A reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and a manufacturing method thereof belong to the technical field of power semi-conductor devices. On the basis of a traditional RC-IGBT device structure, a P-type well region 12 is introduced between an N+ collector short circuit area 11 and an N type electric field preventing layer 8, and the N type electric field preventing layer 8 and the P-type well region 12 are insulated from a metal collector 10 by adopting an isolation medium 13. On the basis of traditional RC-IGBT device characteristics, the device can fully eliminate an intrinsic Snap back phenomenon of a traditional RC-IGBT during connection in the positive direction and has a similar loss characteristic as the traditional RC-IGBT. The RC-IGBT device and the manufacturing method are applicable to the field of semi-conductor power devices from small power to large power and power integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT), in particular to a reverse conduction type insulated gate bipolar transistor (RC-IGBT). Background technique [0002] Insulated gate bipolar transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low conduction voltage of power transistor, large on-state current and small loss. It has become one of the core electronic components in modern power electronic circuits and is widely used in Various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. The application of IGBT plays an extremely important role in improving the performance of power electronic systems. [0003] In powe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L21/331
Inventor 张金平杨文韬单亚东顾鸿鸣刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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