Method for enhancing internal quantum efficiency of ultraviolet LED through femtosecond laser

A technology of internal quantum efficiency and femtosecond laser, which is applied in the field of femtosecond laser-enhanced internal quantum efficiency of ultraviolet LEDs, can solve problems such as complex experimental steps, experimental environment, and performance of GaN-based LEDs. The method is simple and easy to achieve, and enhances the internal quantum efficiency. Efficiency, ease of production

Active Publication Date: 2021-07-23
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, these studies are all carried out by chemical growth or synthesis methods, which require complex experimental procedures and strict experimental environments. At the same time, new metal elements are introduced, which will affect the performance of GaN-based LEDs to a certain extent.

Method used

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  • Method for enhancing internal quantum efficiency of ultraviolet LED through femtosecond laser
  • Method for enhancing internal quantum efficiency of ultraviolet LED through femtosecond laser
  • Method for enhancing internal quantum efficiency of ultraviolet LED through femtosecond laser

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0022] A method for enhancing the quantum efficiency of ultraviolet LEDs by femtosecond laser, such as figure 1 Shown:

[0023] Step 1: GaN-based MQW LED structures are grown on sapphire substrates by epitaxial growth

[0024] (1) if figure 1 As shown, the LED from top to bottom is p-type GaN 4, InGaN multiple quantum well 5, n-type GaN 6, AlN buffer layer 7, and sapphire substrate 8;

[0025] (2) Use inductively coupled plasma technology to etch to expose the n-type GaN layer, such as figure 1 As shown in the middle step type, the thickness of the p-type GaN layer is 100nm, the thickness of the InGaN multiple quantum well is 50nm, and the thickness of the n-type GaN layer is 2μm.

[0026] Step 2: Preparation of Metal Grid Transparent Electrode

[0027] (1) Spin-coat AR 300-80new adhesion promoter on the surface of the LED at a spin-coating speed o...

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Abstract

The invention relates to a method for enhancing the internal quantum efficiency of an ultraviolet LED through femtosecond laser, which belongs to the technical field of semiconductor optoelectronic devices. According to the method, the femtosecond laser beam is used for processing on the surface of the GaN-based LED, the Ga nano-particles are obtained through single-point ablation in an oblique incidence mode, and the GaN-based LED internal quantum efficiency in the ultraviolet band is improved based on surface plasmon excimer excitation regulation and control. The method is simple and easy to implement, single-pulse processing is carried out through oblique incidence of femtosecond laser under the condition that new metal impurities are not introduced, and the material is induced to generate coulomb explosion phase change by utilizing the high peak density of the femtosecond laser and the high-temperature decomposition characteristic of the GaN material, so that the metal Ga nano-particles are formed, and large-area efficient processing can be achieved; and finally, the photoluminescence (PL) intensity and the internal quantum efficiency of the ultraviolet band are effectively enhanced, and the method can be widely applied to the fields of medical sterilization, secret communication and the like.

Description

technical field [0001] The invention relates to a method for enhancing the internal quantum efficiency of an ultraviolet LED by a femtosecond laser, and belongs to the technical field of semiconductor optoelectronic devices. Background technique [0002] Gallium nitride (GaN)-based ultraviolet light-emitting diodes (Light Emitting Diode, hereinafter referred to as LED) have great potential in civilian and military fields because of their wide direct bandgap, high thermal conductivity, high electron mobility, and high chemical stability. Commercial value and application prospect, it can be used in related fields such as sterilization, secure communication, medical treatment and biochemical detection. At present, for GaN-based LEDs, the technology to improve the luminous efficiency of blue light is relatively mature, but the improvement of luminous efficiency in the ultraviolet band is still a difficult point. For the judgment of LED performance, an important parameter is the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L33/00G02B5/00B82Y30/00
CPCH01L33/007H01L21/268G02B5/008B82Y30/00
Inventor 姜澜王飞飞孙靖雅
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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