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187results about How to "Reduce coverage area" patented technology

Flexible display panel and manufacturing method thereof and flexible display device

The invention discloses a flexible display panel and a manufacturing method thereof and a flexible display device, and relates to the technical field of display. Quality declining and even failure ofthe flexible display device caused by cracks and even fractures of an inorganic material insulating layer because of the stress can be prevented. The flexible display panel comprises the inorganic material insulating layer. The inorganic material insulating layer comprises a non-insulating functional area. The non-insulating functional area is internally provided with removing through holes for removing the inorganic material insulating layer in the non-insulating functional area so as to remove the organic material filled in the through holes. The two sides of the non-insulating functional area are not provided with a conductive film layer contacted with the inorganic material insulating layer. The coverage area of the inorganic material insulating layer can be reduced without influencingthe insulation function of the inorganic material insulating layer, and the removing through holes are filled by using the organic material so that the probability of the cracks and even the fractures of the inorganic material insulating layer can be reduced, and quality declining and even failure of the flexible display device can be prevented.
Owner:BOE TECH GRP CO LTD

Method and an apparatus for liquid safety-detection with a radiation source

A method and an apparatus for liquid safety-detection with a radiation source relate to a radiation detecting technology. The main steps of the method of the invention are: conveying an article to be detected into an operation zone within a radiation shield; allowing a ray beam to be emitted from the radiation source, to pass through the article to be detected, and to be received by a detector; transmitting the received ray signal to a data collector by the detector; amplifying and forming the ray signal, and transmitting such data to a data processing computer by the data collector, and transmitting a data collected by thickness measuring probing heads to the data processing computer by the same; and processing a data from the data collector and a data from the thickness measuring probing heads to derive the density and atomic number of the detected liquid, comparing a result with the densities and atomic numbers of dangerous articles in a existing database, and displaying the detected information of the detected article, by the data processing computer. Comparing to the prior art, the invention is not subjected to the affection of the outside package of an article and has great anti-interference, and has the features of small volume, high accuracy of detection, easy shielding, and high use safety and reliability.
Owner:TSINGHUA UNIV +1

Crystalline silicon solar cell with high-photoelectric conversion efficiency and manufacturing method thereof

The invention discloses a crystalline silicon solar cell with high-photoelectric conversion efficiency and a manufacturing method thereof. The cell comprises a crystalline silicon P-N node substrate, a back electrode and a front gate electrode, wherein the back electrode is in ohmic contact with the P area of the crystalline silicon P-N node substrate; the front gate electrode is in ohmic contact with the N area of the crystalline silicon P-N node substrate; the front gate electrode is wrapped under the antireflection layer and comprises a SiO2 layer and an antireflection layer; the SiO2 layer is positioned on the surface of the N area of the crystalline silicon P-N node substrate; and the antireflection layer is arranged on the SiO2 layer. The manufacturing method comprises a cleaning and flocking step, a diffusing and knotting step, a phosphorus-washing and etching step, a back electrode-preparing step, a photoinduced front gate electrode electroplating step, an oxidizing and sintering step, a front gate electrode electroplating step and an antireflection layer preparing step. The photoinduced front gate electrode electroplating step and the oxidizing and sintering step are adopted, so that the cell has the characteristics of simple production process, high efficiency, low cost, low front gate electrode shade loss of the solar cell, low contact resistance and body resistance, uneasiness in line breaking of the thin front gate electrode, low cell surface reflectivity and high photoelectric conversion efficiency.
Owner:YUNNAN UNIV

Broadband circularly polarized micostrip antenna

The invention discloses a broadband circularly polarized micostrip antenna. The broadband circularly polarized micostrip antenna is used for solving the problem of narrow working band of existing circularly polarized microstrips. The broadband circularly polarized micostrip antenna comprises a dielectric slab (1), a radiating unit (2), a radiating bottom slab (3) and a coaxial cable (4). The upper surface and the lower surface of the dielectric slab (1) are printed with the radiating unit (2) and the radiating bottom slab (3) respectively; the radiating bottom slab (3) is composed of a square patch (33), eight quasi-fractal units (31) and a metal strip (32), wherein the diagonals of the square patch (33) are symmetrically etched with four composite-structured slots (331) and equal-arm L-type slots (332),the eight quasi-fractal units (31) are uniformly distributed outside the square patch (33) and connected through the metal strip (32); along the diagonal without truncated angles of the square patch, the radiating unit (2) is symmetrically etched with two U-type slots (21) with outward openings. The broadband circularly polarized microstrip antenna has the advantages of being broad in band and small in size and can be applied to radio frequency identification, radar and wireless communication.
Owner:XIDIAN UNIV

Touch screen, touch display device and production method of touch screen

The invention discloses a touch screen, a touch display device and a production method of the touch screen. The touch screen comprises first electrodes, second electrodes, second electrode connecting wires, first electrode connecting wires, insulating blocks and a protective layer. The first electrodes, the second electrodes and the second electrode connecting wires are arranged on a first level. The first electrodes and the second electrodes intersect with each other. The second electrode connecting wires connect the adjacent second electrodes at the intersection. The first electrode connecting wires on a second level connect the adjacent first electrodes at the intersection in an overlapping manner. The insulating blocks located between the first electrode connecting wires and the second electrode connecting wires are overlapped with the first electrode connecting wires. The arrangement size of the insulating blocks in the direction of the first electrodes is smaller than the length of each first electrode connecting wire, and the arrangement size of the insulating block in the direction of the second electrodes is not smaller than the width of each first electrode connecting wire. The protective layer is arranged above the structure of the first level, the insulating blocks and the second level. Light transmissivity of the touch screen is improved greatly, macroscopic color effect is improved, and touch resistance between the first electrodes is also reduced.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD

Preparation method of crystalline silicon SE solar cell and crystalline silicon SE solar cell

The invention provides a preparation method of a crystalline silicon SE solar cell. The preparation method comprises the following steps: (S1) the wool making, the dispersion and the phosphorosilicate glass removal treatments are implemented for the surface of a silicon slice; then a silicon nitride antireflection film is plated on the frontal surface of the silicon slice; (S2) one layer of metal mask is covered on the surface of the antireflection film; then bismuth oxide is deposited on the antireflection film by adopting the magnetron sputtering method; (S3) back surface silver conductive paste and back field aluminum paste are printed on the back surface of the silicon slice; the whole body is introduced in a tunnel kiln for sintering; the annealing is implemented after finishing the sintering; (S4) the photoinduction electroplating is implemented on the frontal surface of the silicon slice to obtain the crystalline silicon SE solar cell. The preparation method, provided by the invention, has the advantage of simple process, low cost and capability of realizing large-scale production; the prepared crystalline silicon SE solar cell has the benefits of fine surface electrode grid lines, small covering area, low cell serial connection resistance, increased fill factor, high photoelectric converting efficiency and low cost.
Owner:SHANGHAI BYD
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