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Method and system for remote delivery of retail banking services

A practical system and method for the remote distribution of financial services (e.g., home banking and bill-paying) involves distributing portable terminals to a user base. The terminals include a multi-line display, keys “pointing to” lines on the display, and additional keys. Contact is established between the terminals and a central computer operated by a service provider, preferably over a dial-up telephone line and a packet data network. Information exchange between the central computer and the terminal solicits information from the terminal user related to requested financial services (e.g., for billpaying, the user provides payee selection and amount and his bank account PIN number). The central computer then transmits a message over a conventional ATM network debiting the user's bank account in real time, and may pay the specified payees the specified amount electronically or in other ways as appropriate. Payments and transfers may be scheduled in advance or on a periodic basis. Because the central computer interacts with the user's bank as a standard POS or ATM network node, no significant software changes are required at the banks' computers. The terminal interface is extremely user-friendly and incorporates some features of standard ATM user interfaces so as to reduce new user anxiety.
Owner:OFFICIAL PAYMENTS

Methods and structures for highly efficient hot carrier injection programming for non-volatile memories

A metal oxide semiconductor field effect transistor (MOSFET) in a non-volatile memory cell has a source, a drain and a channel region between the source and the drain, all formed in a substrate of opposite conductivity type to the conductivity type of the source and drain. The MOSFET is programmed by connecting the drain electrode to the supply source of the main voltage, Vcc, provided to said non-volatile memory cell and supplying selected voltages to the source and substrate so as to invert a portion of the channel region extending from the source toward the drain. The inverted portion of the channel region ends at a pinch-off point before reaching the drain. By controlling the reverse bias across the PN junction between the source and the substrate, the pinch-off point of the inversion region is pulled back toward the source thereby to increase the programming efficiency of the MOSFET.
Methods and structures for highly efficient Hot Carrier Injection (HCI) programming for Non-Volatile Memories (NVM) apply the main positive supply voltage Vcc to, the drain electrode of the NVM cell from the chip main voltage supply in contrast to the conventional method using a higher voltage than Vcc. The source electrode and substrate are reverse biased with a differential voltage relative to the drain, while a voltage pulse is applied to the control gate of the NVM cell to turn on the NVM cell for programming. To optimize the programming condition, the source voltage and the substrate voltage are then adjusted to achieve the maximum threshold voltage shifts under the same applied gate voltage pulse condition (i.e. using a gate pulse with the same voltage amplitude and duration regardless of the source voltage and the substrate voltage). The substrate voltage to the drain voltage can not exceed the avalanche multiplication junction breakdown for a small programming current during the bias voltage adjustment.
Owner:PEGASUS SEMICON SHANGHAI CO LTD
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