Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light emitting diodes. An insertion layer is added between a p-type GaN layer and a p-type contact layer, and the insertion layer comprises an Mg quantum dot layer and a first GaN layer which are sequentially stacked on the p-type GaN layer. The Mg quantum dot layercomprises a plurality of Mg quantum dots distributed on the p-type GaN layer, the interfaces between the plurality of Mg quantum dots and the p-type GaN layer and between the plurality of Mg quantumdots and the first GaN layer are rough, diffuse reflection of light rays at the interface of the p-type GaN layer can be increased, total reflection of the light rays possibly occurring at the interface of the p-type GaN layer is reduced, and therefore the light emitting rate is improved. The first GaN layer can cover the rough surface of the Mg quantum dot layer, and the quality of the p-type contact layer growing on the first GaN layer is ensured. The light extraction rate of the finally obtained light-emitting diode epitaxial wafer can be improved.

Description

technical field [0001] The disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. The light emitting diode epitaxial wafer at least includes a substrate and an n-type GaN layer, an active layer, a p-type GaN layer and a p-type contact layer sequentially stacked on the substrate. [0003] In the related art, the p-type GaN layer in the light-emitting diode epitaxial wafer is a semiconductor material used to provide holes, and the p-type GaN layer is usually set thicker to ensure that the p-type GaN layer has better crystal quality and can provide Plenty of holes. However, ...

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Problems solved by technology

However, when the light emitted from the active layer passes through the p-type GaN layer with a large thickness, it will be absorbed and reflected by the p-type GaN layer, resulting in the light emission rate of the light-emitting diode is still not high enough.

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