Deep ultraviolet LED with high external quantum efficiency and production method thereof
An external quantum efficiency and deep ultraviolet technology, which is applied in the field of light-emitting diodes, can solve the problems of low internal quantum efficiency, reduced light extraction efficiency of devices, and increased incident angle, so as to improve the exit probability, increase internal quantum efficiency, and increase The effect of scattering
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[0033] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings of the present invention, and the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without making creative efforts all belong to the protection scope of the present invention.
[0034] figure 1 It is a schematic cross-sectional structure diagram of the deep ultraviolet LED with high external quantum efficiency of the present invention. Such as figure 1 As shown, the deep ultraviolet LED with high external quantum efficiency includes a patterned sapphire substrate 1; an epitaxial stack disposed on the upper surface of the patterned sapphire substrate 1; an electrode layer disposed on the upper surface of the epitaxial stack.
[0035] Patterned sap...
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