Method for manufacturing silicon substrate microcavity laser device

Abstract

The invention discloses a method for manufacturing a silicon substrate microcavity laser device. The method for manufacturing the silicon substrate microcavity laser device comprises the steps that a germanium layer is formed on the front face of a silicon substrate in an extension mode by adopting an ultra-high vacuum chemical vapor deposition method; the silicon substrate with the epitaxial germanium layer is put in an MOCVD reaction chamber, and a low-temperature nucleary gallium arsenide layer and a high-temperature gallium arsenide layer are grown in sequence respectively; a laser device structure is formed in an extension mode after surface polishing is carried out on the high-temperature gallium arsenide layer; a mocrocavitie and an output waveguide are formed on the laser device structure in a drying etching mode; a silicon dioxide layer is deposited after the mocrocavitie and the output waveguide are formed, and an electrode window is formed in the upper portion of the microcavity; positive electrodes are manufactured on the silicon dioxide layer and the upper surface of the electrode window, and electrode isolation is carried out; a back electrode is manufactured on the back face of the silicon substrate, and the manufacturing of the device is completed. According to the method for manufacturing the silicon substrate microcavity laser device, high-quality III-V group layers are achieved by combining the ultra-high vacuum chemical vapor phase epitaxy and MOCVD, and the cleanness and leveling of the surface are achieved by polishing and cleaning. The smooth side wall of the microcavity is achieved through drying etching and wet etching, and the losses of the laser device are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor substrates, in particular to a method for manufacturing a silicon-based microcavity laser, which is used to combine ultra-high vacuum chemical vapor deposition and MOCVD to manufacture a silicon-based microcavity laser, which is applied to silicon-based optoelectronic integration and silicon-based photonics. Background technique [0002] For half a century, as the material basis of microelectronics technology, semiconductor silicon has promoted the rapid development of modern information technology. "When the price remains unchanged, the number of transistors that can be accommodated on an integrated circuit will increase by one every 18 months. times, the performance will also be doubled." The performance of integrated circuit chips has been greatly improved, and it has brought huge economic benefits; however, when the transistor feature size is gradually reduced, the production cost has also begun t...

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Problems solved by technology

These dislocations and antiphase domain boundaries will extend all the way to the surface of the epitaxial layer, seriously affecting the quality of the epitaxial layer

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