On-chip mode converter based silicon-germanium photoelectric detection apparatus

Abstract

The invention discloses an on-chip mode converter based silicon-germanium photoelectric detection apparatus, and relates to the field of an optical communication device. The silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector; the optical coupler, the on-chip mode converter and the multi-mode silicon-germanium photoelectric detector are connected in sequence, and are all fixed on silicon wafers of the insulating substrate; the incident fundamental mode optical signal is transmitted to the optical coupler through single-mode fiber; the fundamental mode optical signal after being subjected to the coupling by the optical coupler enters the on-chip mode converter; the on-chip mode converter converts the fundamental mode optical signal into a multi-mode optical filed; the multi-mode optical field enters the multi-mode silicon-germanium photoelectric detector; and the multi-mode silicon-germanium photoelectric detector converts the multi-mode optical field into an electric signal. A germanium heavily-doped region in the silicon-germanium photoelectric detection apparatus is positioned in a region with relatively weak optical strength distribution in the multi-mode optical field; the absorption loss of the germanium heavily-doped region and germanium through holes on the optical field is obviously reduced, and the responsivity of the silicon-germanium photoelectric detection apparatus can be effectively improved.

Description

technical field [0001] The invention relates to the field of optical communication devices, in particular to a silicon germanium photoelectric detection device based on an on-chip mode converter. Background technique [0002] Photodetectors are important devices in optical communication systems. In recent years, silicon-based photonic technology has developed rapidly, and CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) process-compatible silicon germanium photodetectors can be monolithically integrated with other silicon-based photonic devices and will be widely used. However, in addition to being absorbed by germanium to generate electrical signals, part of the light field is absorbed by germanium heavily doped regions and through holes, resulting in additional loss and reducing the responsivity of silicon germanium photodetectors. Contents of the invention [0003] The purpose of the present invention is to overcome the above-ment...

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Problems solved by technology

However, in addition to being absorbed by germanium to generate electrical signals, part of the light field is absorbed by germanium heavily doped regions and through holes, resulting in additional loss and reducing the responsivity of silicon germanium photodetectors.

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