2 results about "Entrance angle" patented technology

An optical component includes a light guide (2), which has an incident portion (2a) composed of a plurality of incident prisms having incident surfaces, an exit surface (2b) for emitting incident light outward, and an upper surface (2f) and a lower surface (2g) connecting the incident portion (2a) and the exit surface (2b). The direction along the extension direction of the incident prisms is defined as the y-direction, and the upper surface (2f) and the lower surface (2g) are inclined with respect to the z-direction, which is orthogonal to the y-direction, at angles ωu and ωd, respectively. With respect to the inclination reference angle ω, the upper surface (2f) and the lower surface (2g) satisfy ωu≤ω and ωd≥ω. The inclination reference angle ω is relative to the angle sin... ‑1 (sin(θx+α) / n) cosψx The calculated ωo satisfies ωo-10°≤ω≤ωo+10°. ψx is the tilt angle of the incident surface, α is the incident angle of the external light (L1), and θx is the tilt angle of the light guide (2) relative to the vertical direction.

We provide ion implantation technology that can achieve the desired implantation profile. [Solution] The ion implantation method comprises: irradiating a wafer at a first temperature with a first ion beam set to an angle condition of the ion beam such that the incident angle is sufficiently smaller than the critical angle at which channeling occurs with respect to the crystal axis of the wafer, at a predetermined position on the surface of the wafer; and, after irradiation with the first ion beam, irradiating a wafer at a second temperature different from the first temperature with a second ion beam set to the same angle condition of the ion beam as the first ion beam at a predetermined position on the surface of the wafer. The angle condition of the ion beam is set by adjusting the angle of the wafer, thereby forming a desired implantation profile within the wafer.