Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof

Abstract

The invention discloses an Si-substrate medium / long wave laminated bicolor HgCdTe material and a preparation method thereof. The method comprises the steps of cleaning an epitaxial-level Si substrate, removing an autoxidation layer of the Si substrate, forming an artificial oxidation layer, removing the oxidation layer of the Si substrate, conducting As passivation, allowing a ZnTe buffer layer to grow through transfer enhancement MME (melanin metabolic enzyme), allowing a CdTe buffer layer to grow, and allowing three HgCdTe thin layers with different components and thicknesses to grow.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a Si-based medium / long-wave laminated two-color mercury cadmium telluride material and a preparation method thereof. Background technique [0002] In the existing technology, the two-color infrared focal plane detection technology has significant advantages such as dual-band detection and more ground target information can be obtained, and has broad application prospects in target search, missile early warning detection, intelligence reconnaissance and other fields. [0003] The preparation of stacked two-color HgCdTe material is the basis for the realization of two-color detectors. Traditional medium / long-wave two-color detectors use cadmium zinc telluride (CdZnTe) as the substrate material. The cost of the material is high, the mechanical strength is poor, and the temperature during the growth process It is difficult to control, and it is very difficult in the substrate grind...

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Problems solved by technology

[0003] The preparation of stacked two-color HgCdTe material is the basis for the realization of two-color detectors. Traditional medium / long-wave two-color detectors use cadmium zinc telluride (CdZnTe) as the substrate material. The cost of the material is high, the mechanical strength is poor, and the temperature during the growth process It is difficult to control, and it is very difficult in the substrate grinding and polishing process of the (211) crystal orientation, and the surface damage is more, which leads to a higher surface defect density after epitaxial HgCdTe; at the same time, it is difficult to achieve large-scale material preparation, which limits Two-color devices are developing in the direction of large area arrays

[0004] In addition, in terms of device structure, Raytheon and Teledyne companies in the United States all use in-situ doping to form a stacked structure directly, and DRS company directly uses bonding technology. These technical routes are technically difficult to implement and are different from Existing device processes based on liquid phase epitaxy are not compatible

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