Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof

A mercury cadmium telluride and long-wave technology, applied in the field of materials, can solve problems such as difficult temperature control, high surface defect density, incompatible device technology, etc., and achieve the effect of avoiding small size

Active Publication Date: 2013-07-31
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

[0003] The preparation of stacked two-color HgCdTe material is the basis for the realization of two-color detectors. Traditional medium/long-wave two-color detectors use cadmium zinc telluride (CdZnTe) as the substrate material. The cost of the material is high, the mechanical strength is poor, and the temperature during the growth process It is difficult to control, and it is very difficult in the substrate grinding and polishing process of the (211) crystal orientation, and the surface damage is more, which leads to a higher surface defect density af

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  • Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof
  • Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof
  • Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof

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[0025] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0026] In order to solve the problems of small size, difficult temperature control, high cost, and poor surface quality caused by the existing CdZnTe substrate, the present invention provides a Si-based medium / long-wave laminated two-color mercury cadmium telluride material and its preparation method , Si substrate as an alternative substrate material has: larger area substrate, lower substrate material cost, automatic thermal stres...

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Abstract

The invention discloses an Si-substrate medium/long wave laminated bicolor HgCdTe material and a preparation method thereof. The method comprises the steps of cleaning an epitaxial-level Si substrate, removing an autoxidation layer of the Si substrate, forming an artificial oxidation layer, removing the oxidation layer of the Si substrate, conducting As passivation, allowing a ZnTe buffer layer to grow through transfer enhancement MME (melanin metabolic enzyme), allowing a CdTe buffer layer to grow, and allowing three HgCdTe thin layers with different components and thicknesses to grow.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a Si-based medium / long-wave laminated two-color mercury cadmium telluride material and a preparation method thereof. Background technique [0002] In the existing technology, the two-color infrared focal plane detection technology has significant advantages such as dual-band detection and more ground target information can be obtained, and has broad application prospects in target search, missile early warning detection, intelligence reconnaissance and other fields. [0003] The preparation of stacked two-color HgCdTe material is the basis for the realization of two-color detectors. Traditional medium / long-wave two-color detectors use cadmium zinc telluride (CdZnTe) as the substrate material. The cost of the material is high, the mechanical strength is poor, and the temperature during the growth process It is difficult to control, and it is very difficult in the substrate grind...

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Application Information

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IPC IPC(8): H01L31/0296H01L31/0352H01L31/18
CPCY02P70/50
Inventor 王经纬巩锋王丛刘铭强宇
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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