The invention relates to preparation method of a
Rubrene: MoO3 mixed thin film-based
infrared detector. The method mainly comprises the following steps of carrying out substrate cleaning, thin film preparation, thin film testing,
detector preparation and
detector performance test. Firstly, ultrasonic cleaning is carried out in methylbenzene,
acetone,
ethanol and deionized water for 15 minutes separately; then the temperature of an
evaporation source is controlled in a high vacuum organic-composite
evaporation system to further control the
evaporation rate to prepare a mixed thin film at the
mass ratio of 1 to 1, and next, test is carried out on the
optical property and the electrical property of the thin film. Tests show that the interaction of the two materials is very strong, an
intermediate energy level is induced in the interaction process to form a
charge transfer complex, and the corresponding energy, namely a near-
infrared wave band, is subjected to optical absorption. Finally,an
infrared detector based on the mixed thin film is prepared, the current-
voltage characteristic of the detector is tested, and the test proves that the
Rubrene: MoO3 mixed thin film-based
infrared detector shows relatively high optical current turn-off ratio.