4 results about "Rubrene" patented technology

The invention relates to a graphene-based high-switch-ratio vertical organic transistor and a preparation method thereof, and belongs to the technical field of organic semiconductor devices. The transistor comprises a first metal electrode, a rubrene single-crystal active layer, a second metal electrode, a single-layer graphene electrode, a silicon dioxide dielectric layer and a silicon substrate which are sequentially stacked from top to bottom, wherein the silicon substrate is also used as a grid electrode. The graphene electrode is prepared by a mechanical stripping method, and is transferred to the surface of silicon dioxide at a low temperature of 50-120 DEG C after being pretreated by ozone or plasma to form a porous structure so as to improve the vertical charge injection performance; the rubrene single crystal active layer is deposited through a two-step sublimation method, high crystal quality is obtained through annealing treatment, then the rubrene single crystal active layer is transferred to the surface of the graphene electrode by means of the flexible polymer microneedle, and interface defects are reduced. And finally, respectively depositing metal electrodes with the thickness of 20-80nm above and below the rubrene to construct a vertical organic transistor structure. The device shows excellent switching performance under the condition of low power consumption, the switching ratio is larger than 2.5 * 10 < 6 >, the off-state current density is not larger than 10 [mu] A / cm < 2 >, and the device is suitable for flexible logic devices and neuromorphic calculation application.

The invention discloses a light-activated chiral zinc complex material with adjustable circular polarization afterglow as well as a preparation method and application of the light-activated chiral zinc complex material, and belongs to the field of circular polarization afterglow materials. The chiral zinc complex material is obtained by self-assembling zinc iodide and an S-(-)-1, 1 '-binaphthyl-2, 2'-diphenylphosphine ligand at room temperature and adopting an interface diffusion method, the molecular formula of the chiral zinc complex material is S-Zn (BINAP) I2, rapid and simple mass synthesis is achieved, the chiral zinc complex material has good solubility and stability, technical support is provided for further application of the material, and the chiral zinc complex material is suitable for industrial production. And a foundation is provided for subsequently preparing a thin film material. According to the prepared polymethyl methacrylate film doped with the chiral zinc complex material and the polymethyl methacrylate film doped with the chiral zinc complex material and rubrene, the film material shows multicolor circular polarization afterglow after being irradiated by ultraviolet light, and the film material has the advantages that the film material can be used for preparing the polymethyl methacrylate film doped with the chiral zinc complex material and the rubrene; the method has important application value in the security fields of dynamic multiple anti-counterfeiting, advanced information encryption and the like.

This invention discloses an in-situ preparation method for thin films using strong magnetic fields to control the orientation of organic molecules, as well as the prepared thin films and their applications, belonging to the field of organic semiconductor thin film technology. The preparation method includes the following steps: heating rubrene powder in a vacuum and magnetic field environment to evaporate and deposit it onto an upper substrate, thus obtaining a rubrene thin film. This in-situ preparation method for thin films using strong magnetic fields to control the orientation of organic molecules couples a high-vacuum in-situ preparation system with a superconducting strong magnetic field system. The aim is to overcome molecular thermal fluctuations at a pure gas-solid phase transition interface without solvent interference, thereby achieving precise control of the spatial orientation of weakly magnetic organic molecules. The orientation-controlled organic thin films prepared by the strong magnetic field significantly reduce the ferromagnetic resonance linewidth (Δ). H This increases its charge current density. J c,norm Therefore, the thin film after orientation control has a higher spin-charge conversion efficiency.

The invention discloses an organic vertical cavity surface emitting laser and a preparation method thereof, relates to the technical field of semiconductor preparation, and aims to solve the problems that in the prior art, when a reflecting material layer is formed on the surface of an organic material layer through a traditional PVD or sputtering process, the coating uniformity is not easy to control, and the step coverage rate is relatively poor. The laser comprises a semiconductor substrate, a first distributed Bragg reflector, an organic crystal film layer and a second distributed Bragg reflector which are sequentially arranged from bottom to top, wherein the organic crystal film layer comprises a 4, 4-dicarbazole-stilbene organic micro-nano crystal film layer, a styrene organic micro-nano crystal film layer or a pentacene organic micro-nano crystal film layer, and each of the first distributed Bragg reflector and the second distributed Bragg reflector comprises a plurality of aluminum oxide film layers and hafnium oxide film layers which are alternately arranged. The reflecting film layer of the laser is uniform and controllable, and the laser has excellent reflectivity and other properties.