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32 results about "Rubrene" patented technology

Rubrene (5,6,11,12-tetraphenyltetracene) is a red colored polycyclic aromatic hydrocarbon. Rubrene is used as a sensitiser in chemoluminescence and as a yellow light source in lightsticks.

Preparation method of crystalline organic thin film transistor controlled through crystalline solvent

The invention discloses a preparation method of a crystalline organic thin film transistor controlled through a crystalline solvent, namely a growth method of changing growth of rubrene organic thin film crystal into ordered growth from disordered growth through adding the crystalline solvent 1,3,5-trichorobenzene (TCB) on the basis of a common organic solvent, such as a chloroform solvent. A TCBsolution dissolved into the chloroform solvent is dispensed on a Si / SiO2 substrate, and a rubrene solution dissolved into the chloroform solvent is dropwise added quickly when TCB solution just formscrystal. The TCB firstly forms a uniform directional substrate modification layer on the substrate. Rubrene molecules aggregate and grow on a TCB modification layer to form a rubrene organic semiconductor layer which is the same as a TCB substrate in direction and has high orderliness. An electrode is evaporated on the rubrene semiconductor layer and the organic thin film transistor is finally formed. The crystalline organic thin film transistor is relatively good in film-forming property, simple in operation and low in cost, and has a wide application prospect in the field of organic photoelectronic devices, and energy is saved.
Owner:CHANGCHUN UNIV OF TECH

ngal light-excited chemiluminescence detection kit, its preparation and use method

The invention relates to a method for preparing an NGAL (Neutrophil Gelatinase Associated Lipocalin) optical excitation chemiluminescence detection kit. The method comprises the following steps: activating a luminous microsphere, namely activating the luminous microsphere through prepared carbodiimide and Sulfo-NHS solutions in a PBS (Phosphate Buffer Saline) buffer solution, wherein the luminous microsphere is a carboxyl modified luminous microsphere, and the luminous microsphere is coated with dimethylthiophene, anthracene and rubrene and carried with an europium chelate; coupling the luminous microsphere with an anti-NGAL antibody, namely selecting the carboxyl modified luminous microsphere, carrying out mixing reaction on the anti-NGAL monoclonal antibody and the activated carboxyl modified luminous microsphere to couple the anti-NGAL antibody to the luminous microsphere, and adding freshly prepared carbodiimide at the same time while mixing the anti-NGAL antibody and the activated luminous microsphere; labeling the anti-NGAL antibody through biotin; and labeling a photosensitive microsphere through avidin. The invention also relates to preparation and use methods of the NGAL optical excitation chemiluminescence detection kit. The methods disclosed by the invention solve the problems that the sensitivity is low and the detection is easily interfered by the environment in a detection method in the prior art.
Owner:WUHAN LIFE ORIGIN BIOTECH LTD

Method for preparing dendritic rubrene crystal film by utilizing polylactic acid

The invention relates to a method for preparing a dendritic rubrene crystal film from polylactic acid. The preparation method comprises the following steps: uniformly mixing an inducer polylactic acidsolution and a rubrene solution according to a certain ratio, spin-coating the mixture on a substrate to form a film, and inducing rubrene molecules to orderly grow into a dendritic film by taking polylactic acid as a heterogeneous induction layer under the condition of heat treatment annealing. The rubrene crystal mainly comprises an orthorhombic system, so that the carrier mobility can be improved, the dendritic crystal thin film is high in coverage rate, the crystal form is adjustable and controllable, and a basis is provided for preparation of the organic effect transistor. In the heat treatment annealing process, the regulation and control of the crystal size and crystallinity are realized by adjusting the action temperature and action time of annealing. The dendritic rubrene crystalfilm is prepared by adopting a solution spin-coating method, and compared with a traditional vacuum deposition method, the method is simple to operate, does not need large-scale equipment support, and is easier to realize industrialization.
Owner:ZHENGZHOU UNIV

Method for preparing spherical crystal film rubrene through induction of rigid structure polymer

The invention belongs to the technical field of organic semiconductor materials, and particularly relates to a method for preparing spherical crystal film rubrene through induction of a rigid structure polymer, namely, under the condition of thermal annealing, a PET polymer layer is adopted to induce rubrene molecules to orderly grow into spherical crystals. A PET polymer induction layer dissolvedin trifluoroacetic acid is spin-coated on a fluorine-doped SnO2 conductive glass (FTO) substrate to form a polymer modification layer film, then a rubrene semiconductor layer dissolved by a chloroform solvent is spin-coated, and finally, a high-quality spherical rubrene crystal film is grown by adopting thermal annealing treatment. The rubrene spherocrystal obtained by the method is high in coverage rate, a basis is provided for preparing a high-performance organic field effect transistor, the adopted substrate is non-toxic and low in cost, PET cannot be secondarily dissolved due to chloroform, the spin-coating method is simple and convenient to operate, large-scale equipment is not needed, and industrial production is easy to implement. The preparation method is an innovation in the aspect of spherical crystal film rubrene preparation.
Owner:ZHENGZHOU UNIV

A kind of preparation method of organic thin film transistor

The invention discloses a preparation method of an organic thin film transistor. The preparation method of the organic thin film transistor includes the steps of carrying pre-processing of a SiO2/Si substrate, carrying out self-assembly processing of the substrate, carrying out vacuum evaporation on an organic formwork layer, then evaporating a 80nm rubrene layer at the substrate temperature of 25-110 DEG C and finally carrying out vacuum evaporation on a gold electrode to obtain a rubrene organic thin film transistor component. The self-assembly processing of the substrate includes the following steps: dissolving octadecylphosphonic acid into tetrahydrofuran (THF) to prepare a 1mmol/L solution, and growing an octadecylphosphonic acid film on the pre-processed SiO2/Si substrate with the czochralski method. The vacuum evaporation on the organic formwork layer includes the following steps: placing the substrate provided with the octadecylphosphonic acid film in a self-assembling mode in a vacuum evaporation apparatus, and evaporating a 5-15nm 6,13-pentacene pyrazine (DAP) molecular layer at the vacuum pressure smaller than 1*10<-4>Pa and at the substrate temperature of 25-80 DEG C. The preparation method of the organic thin film transistor has the advantages of being capable of obtaining the orderly crystal-shaped rubrene organic thin film, and promoting carrier transferring efficiency of the rubrene organic thin film transistor.
Owner:CHONGQING UNIV
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