Method for preparing dendritic rubrene crystal film by utilizing polylactic acid

A technology of rubrene and polylactic acid, applied in crystal growth, chemical instruments and methods, single crystal growth and other directions, can solve the problems of difficult control of crystal size of rubrene crystal thin film, difficult control of crystal size, complicated preparation process and the like, Achieve the effect of improving carrier mobility, easy industrialization, and simple operation

Inactive Publication Date: 2020-11-13
ZHENGZHOU UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the deficiencies of the prior art and solve the problems that the crystal size of rubrene crystal film is not easy to control, the crystal quality is poor, and the preparation process is complicated, the purpose of the present...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing dendritic rubrene crystal film by utilizing polylactic acid
  • Method for preparing dendritic rubrene crystal film by utilizing polylactic acid
  • Method for preparing dendritic rubrene crystal film by utilizing polylactic acid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A kind of method utilizing polylactic acid to prepare dendritic rubrene crystal film, comprises following preparation steps:

[0042] 1) First, take polylactic acid and add chloroform to prepare a 2.8mg / mL polylactic acid solution;

[0043]2) Under dark room conditions, take rubrene and add chloroform to prepare 8.5 mg / mL rubrene solution, then mix the two at a volume ratio of 1:1, and oscillate for 30 minutes to mix evenly;

[0044] 3) Under darkroom conditions, spin coat the mixed solution obtained in step 2) onto the FTO conductive glass with a homogenizer to form a thin film. 1cm*1cm in size, use appropriate amount of acetone, absolute ethanol, and deionized water to ultrasonically clean for 15 minutes. The model of the homogenizer is: KW-4A Institute of Microelectronics, Chinese Academy of Sciences (Beijing);

[0045] 4) Under darkroom conditions, place the FTO conductive glass with rubrene film obtained in step 3) on a hot stage at 110°C and keep it warm for 50s;...

Embodiment 2

[0049] A kind of method utilizing polylactic acid to prepare dendritic rubrene crystal film, comprises following preparation steps:

[0050] 1) First, take polylactic acid and add chloroform to prepare a 3mg / mL polylactic acid solution;

[0051] 2) Under dark room conditions, take rubrene and add chloroform to prepare 9 mg / mL rubrene solution, then mix the two at a volume ratio of 1:1, and oscillate for 30 minutes to mix evenly;

[0052] 3) Under darkroom conditions, spin-coat the mixed solution obtained in step 2) onto the FTO conductive glass to form a thin film with a spin coating parameter of 2400r / min and 40s; the FTO conductive glass is cut into 1cm before use. *1cm in size, use appropriate amount of acetone, absolute ethanol, and deionized water to ultrasonically clean for 15 minutes. The model of the homogenizer is: KW-4A Institute of Microelectronics, Chinese Academy of Sciences (Beijing);

[0053] 4) Under darkroom conditions, place the FTO conductive glass with rub...

Embodiment 3

[0057] A kind of method utilizing polylactic acid to prepare dendritic rubrene crystal film, comprises following preparation steps:

[0058] 1) First, take polylactic acid and add chloroform to prepare a 3.4mg / mL polylactic acid solution;

[0059] 2) Under dark room conditions, take rubrene and add chloroform to prepare 8.8 mg / mL rubrene solution, then mix the two at a volume ratio of 1:1, and mix them evenly by ultrasonic oscillation for 30 minutes;

[0060] 3) Under darkroom conditions, spin-coat the mixed solution obtained in step 2) onto the FTO conductive glass to form a thin film with a spin coating parameter of 2300r / min and 40s; the FTO conductive glass is cut into 1cm before use. *1cm in size, use appropriate amount of acetone, absolute ethanol, and deionized water to ultrasonically clean for 15 minutes. The model of the homogenizer is: KW-4A Institute of Microelectronics, Chinese Academy of Sciences (Beijing);

[0061] 4) Under darkroom conditions, place the FTO con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing a dendritic rubrene crystal film from polylactic acid. The preparation method comprises the following steps: uniformly mixing an inducer polylactic acidsolution and a rubrene solution according to a certain ratio, spin-coating the mixture on a substrate to form a film, and inducing rubrene molecules to orderly grow into a dendritic film by taking polylactic acid as a heterogeneous induction layer under the condition of heat treatment annealing. The rubrene crystal mainly comprises an orthorhombic system, so that the carrier mobility can be improved, the dendritic crystal thin film is high in coverage rate, the crystal form is adjustable and controllable, and a basis is provided for preparation of the organic effect transistor. In the heat treatment annealing process, the regulation and control of the crystal size and crystallinity are realized by adjusting the action temperature and action time of annealing. The dendritic rubrene crystalfilm is prepared by adopting a solution spin-coating method, and compared with a traditional vacuum deposition method, the method is simple to operate, does not need large-scale equipment support, and is easier to realize industrialization.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, and in particular relates to a method for preparing a dendritic rubrene crystal film by using polylactic acid. Background technique [0002] At present, traditional inorganic optoelectronic materials are facing difficulties such as single product, high cost and complex process, and it is expected that they will not be able to break through in a short time. At the same time, organic semiconductors have the advantages of being able to prepare large-area devices, rich film-forming technology, simple preparation process, and low cost, and can be prepared by doping and modifying highly integrated and ultra-small-sized products. expected and watched. Rubrene, that is, 5,6,11,12-tetraphenyltetraphenyl, is a common raw material for organic semiconductor materials. Due to its high mobility and long exciton diffusion length, it is widely used in light-emitting diodes, field-effect ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/54C09K11/06C30B7/06H01L51/30H01L51/46H01L51/54
CPCC30B29/54C30B7/06C09K11/06C09K2211/1007C09K2211/1011H10K85/60
Inventor 刘文涛高旭静朱成瑶冯琳琳王家豪高婷婷王晨李鹏洲黄淼铭刘浩何素芹朱诚身
Owner ZHENGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap