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Self-assembly orderly patterning growing preparing method of rubrene films

A self-assembly, rubrene technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of reducing film mobility, destroying film structure, and high process cost

Active Publication Date: 2016-03-09
CHANGCHUN UNIV OF TECH
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  • Abstract
  • Description
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Problems solved by technology

However, for ultra-thin organic films, the process of photolithography will destroy the film structure, thereby reducing the mobility of the film
At the same time, the process cost is high and the time spent is long

Method used

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  • Self-assembly orderly patterning growing preparing method of rubrene films
  • Self-assembly orderly patterning growing preparing method of rubrene films
  • Self-assembly orderly patterning growing preparing method of rubrene films

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Experimental program
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Embodiment Construction

[0008] Such as image 3 As shown, Si substrate (1), the substrate temperature is 20℃; SiO 2 The insulating layer (2) has a thickness of 300nm; the rubrene layer (3) has a thickness of 50nm.

[0009] The specific realization process: the substrate is composed of substrate Si (1) and a layer of 300nm thick SiO on its surface 2 (2) Composition; clean the substrate and put it into the reaction chamber of the seven-station OEL / EL photoelectric thin film joint preparation system; the vacuum degree of the reaction chamber is evacuated to less than 6.0×10 -4 Pa; a layer of rubrene was vacuum evaporated on the substrate with a thickness of 50nm, and the substrate temperature was 20°C. First, it is deposited according to the evaporation rate of 2nm / min, with a thickness of about 10nm, on SiO 2 The dot-like aggregation of rubrene molecules is formed on the layer; then stop for 5 minutes to realize the self-assembly arrangement of molecules; then continue to deposit at the evaporation ...

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Abstract

The invention discloses a self-assembly orderly patterning growing preparing method of rubrene films. In the vacuum atmosphere, a rubrene layer is deposited on a SiO2 layer, through multi-time circulation of deposition and pause, the hole-shaped patterning rubrene films arranged in a self-assembly manner are achieved, rubrene gathering positions are semiconductor electric conducting channels, and holes where rubrene is not gathered are non-conductive parts. Accordingly, the photoetching-free self-assembly patterning growing is achieved, and the purpose of orderly and controllable patterning growing is achieved.

Description

technical field [0001] The invention relates to a method for preparing rubrene thin film self-assembled orderly patterned growth, belonging to the technical field of organic optoelectronics. Background technique [0002] Rubrene (Rubrene, CH), 5.6.11.12-tetraphenyltetraphenyl, red to light brown crystal or crystalline powder, belongs to polycyclic aromatic hydrocarbon cluster (PHA) compound, composed of tetracene ring and four phenyl groups . Rubrene is a high-mobility organic semiconductor material. At present, it is known that the single-crystal mobility is as high as 15-40cm 2 / Vs is the material with higher carrier mobility among the organic semiconductors discovered so far. Moreover, rubrene has a low sublimation temperature, a narrow absorption spectrum and a very low absorption coefficient in the visible region. Therefore, rubrene is considered to be the most potential organic semiconductor material. [0003] The method of film patterning is generally to use photo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/12
CPCC23C14/12C23C14/24
Inventor 王丽娟谢强朱成张玉婷孙丽晶李占国王勇
Owner CHANGCHUN UNIV OF TECH
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